CVD method and apparatus for making silicon oxide films
First Claim
1. A thermal CVD method for depositing a silicon oxide film on a substrate comprising the steps of:
- providing a gas injector for injecting gases toward a surface of a substrate;
moving a substrate in a predetermined direction adjacent the gas injector; and
ejecting the following gases in the order named to a surface of the substrate;
a first gas containing O3 ;
a second gas which is inert to a reaction between an organic Si source and O3 ;
a third gas containing the organic Si source;
a fourth gas which is inert to the reaction;
a fifth gas containing the organic Si source;
a sixth gas which is inert to the reaction; and
a seventh gas containing O3, the flow rate of the second gas being higher than the flow rate of the sixth gas such that deposition of the silicon oxide film proceeds by a postmixing method and thereafter by a pre-mixing method as the substrate is moved in said predetermined direction past said gas injector.
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Accused Products
Abstract
A CVD system for accomplishing deposition of a silicon oxide film on a wafer which is moved in a predetermined direction, under a reaction between an organic Si source and O3. The CVD system comprises a gas injector having a first slit for ejecting a gas containing O3, a second slit for ejecting a gas which is inert to a reaction between the organic Si source and O3, a third slit for ejecting a gas containing the organic Si source, a fourth slit for ejecting a gas which is inert to the reaction, a fifth slit for ejecting a gas containing the organic Si source, a sixth slit for ejecting a gas which is inert to the reaction, and a seventh slit for ejecting a gas containing O3. Additionally, the first to seventh slits are arranged in the order named in the predetermined wafer moving direction. This CVD system improves the characteristics and quality of silicon oxide film deposited on the wafer while lowering a so-called substrate dependency of the deposited film.
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Citations
6 Claims
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1. A thermal CVD method for depositing a silicon oxide film on a substrate comprising the steps of:
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providing a gas injector for injecting gases toward a surface of a substrate; moving a substrate in a predetermined direction adjacent the gas injector; and ejecting the following gases in the order named to a surface of the substrate; a first gas containing O3 ; a second gas which is inert to a reaction between an organic Si source and O3 ; a third gas containing the organic Si source; a fourth gas which is inert to the reaction; a fifth gas containing the organic Si source; a sixth gas which is inert to the reaction; and a seventh gas containing O3, the flow rate of the second gas being higher than the flow rate of the sixth gas such that deposition of the silicon oxide film proceeds by a postmixing method and thereafter by a pre-mixing method as the substrate is moved in said predetermined direction past said gas injector.
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2. A thermal CVD apparatus comprising:
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a gas injector for ejecting gases containing an organic Si source and O3 toward a surface of a substrate, said gas injector having a plurality of linearly adjacent nozzles including; a first nozzle for ejecting a gas containing O3 ; a second nozzle for ejecting a gas which is inert to a reaction between the organic Si source and O3 ; a third nozzle for ejecting a gas containing the organic Si source; a fourth nozzle for ejecting a gas which is inert to the reaction; a fifth nozzle for ejecting a gas containing the organic Si source; a sixth nozzle for ejecting a gas which is inert to the reaction; and a seventh nozzle for ejecting a gas containing O3 ; and means for moving a substrate in a predetermined direction with respect to the gas injector from the first nozzle to the seventh nozzle, whereby a silicon oxide film is deposited on the substrate as it moves past the gas injector. - View Dependent Claims (3, 4, 5, 6)
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Specification