Semiconductor device having mosfets formed in inherent and well regions of a semiconductor substrate

• US 5,545,911 A
• Filed: 12/07/1994
• Issued: 08/13/1996
• Est. Priority Date: 12/17/1993
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Yamada, Masaaki, Otsuki, Kazutaka
• Primary Examiner(s): SAADAT, MAHSHID D
• Application Number:
  US08/350,696
• Time in Patent Office: 615 Days
• Field of Search: 257/285, 257/376, 257/398, 257/400
• US Class Current: 257/376
• CPC Class Codes: H01L 21/74 Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/1083 with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
• CPC Class Codes: H01L 29/66575 where the source and drain or source and drain extensions are self-aligned to the sides of the gate H01L29/66606 takes precedence

Abstract

A semiconductor device has an inherent region of the same conductivity type and the same impurity concentration as a semiconductor substrate and well regions located close to each other under a main surface of the semiconductor substrate. A field oxide film is selectively formed on the main surface. A MOSFET, termed an "undoped MOSFET," is formed in the inherent region. A carrier stop layer having a conductivity type opposite to, and an impurity concentration higher than, that of the inherent region is formed within the inherent region. The carrier stop layer extends from the bottom of the field oxide film and underlies the source/drain regions of the undoped MOSFET in spaced relationship therewith. The carrier stop layer prevents punch-through between the well region and densely diffused source/drain regions in the undoped MOSFET region, even when they are located close to each other. The present invention permits a higher density integration of elements or circuits in a semiconductor device to be achieved than is possible in the prior art.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having an inherent region of a first conductivity type and a well region of a second conductivity type opposite to said first conductivity type, said well region having an impurity concentration higher than the impurity concentration of said inherent region, said semiconductor substrate having a main surface at the surfaces of said inherent region and said well region;

an insulating film selectively formed on said main surface and separating said inherent region from said well region;

a first MOSFET having source and drain regions in said inherent region;

a second MOSFET having source and drain regions in said well region; and

a carrier stop layer having an impurity concentration higher than the impurity concentration of said inherent region and formed within said inherent region, said carrier stop layer extending from the vicinity of the bottom of said insulating film and underlying said source and drain regions of the first MOSFET in spaced relationship therewith, said carrier stop layer having an opening opposite to a channel region of said first MOSFET.

2. A semiconductor device as defined in claim 1 wherein said insulating film divides said inherent region to form a plurality of MOSFET regions.

3. A semiconductor device as defined in claim 1 wherein said substrate further has a second well of said first conductivity type wherein a third MOSFET may be formed.

4. A semiconductor device as defined in claim 1, wherein said opening has an area at least equal to that of said channel region of said first MOSFET.

5. A semiconductor device as defined in claim 1, wherein said impurity concentration of said carrier stop layer is at least about 100 times greater than the impurity concentration of said inherent region.

6. A semiconductor device as defined in claim 1, wherein said carrier stop layer comprises two portions and said opening comprises a gap in-between said portions having an area that is substantially equal to an area of said channel region.

7. A semiconductor device as defined in claim 1, wherein said carrier stop layer is formed by implanting boron ions through said insulating film into said inherent region prior to formation of the source and drain regions of said first MOSFET.

8. A semiconductor device as defined in claim 1, wherein said source and drain regions of said first MOSFET extend from said main surface to a depth of about 0.15 microns beneath said main surface, and said carrier stop layer extends from a depth of about 0.25 microns to about 0.4 microns beneath said main surface in a region underlying said source and drain regions of said first MOSFET.

9. A semiconductor device as defined in claim 1, wherein said carrier stop layer is separated from said source and drain regions of said first MOSFET by a distance of about 0.1 microns.