Method and apparatus for conditioning a semiconductor polishing pad

• US 5,547,417 A
• Filed: 03/21/1994
• Issued: 08/20/1996
• Est. Priority Date: 03/21/1994
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Price, Matthew J., Breivogel, Joseph R., Barns, Christopher E.
• Primary Examiner(s): Rachuba, Maurina T.
• Application Number:
  US08/210,957
• Time in Patent Office: 883 Days
• Field of Search: 451/56, 451/285, 451/286, 451/287, 451/289, 451/443, 451/444
• US Class Current: 451/58
• CPC Class Codes: B24B 53/017 Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Abstract

A method of polishing a thin film formed on a semiconductor substrate. In a method of the present invention a polishing pad is rotated. A substrate is pressed against the rotating polishing pad so that the thin film to be polished is placed in direct contact with the polishing pad. During polishing, the polishing pad is continually conditioned by forming a plurality of grooves into the polishing pad. The grooves are formed by a conditioning block having a substantially planar bottom surface with a plurality of groove generating points extending from the substantially planar surface of the conditioning block. The grooves are generated by sweeping and rotating the conditioning block between an outer radius and an inner radius of the polishing pad.

Claims

1. A pad conditioning assembly for generating a plurality of grooves in a polishing pad used to polish thin films formed on a semiconductor substrate, said pad conditioning assembly comprising:

a rotatable conditioning block having a top surface and a substantially planar bottom surface;

said rotatable conditioning block capable of sweeping back and forth between an inner radius of said polishing pad and an outer radius of said polishing pad while said rotatable conditioning block rotates about an axis substantially perpendicular to said polishing pad and said substantially planar bottom surface having a plurality of discreet points extending from said substantially planar bottom surface capable of generating said plurality of grooves.

2. The assembly of claim 1 wherein said discreet points are diamond tipped threaded shanks.

3. The assembly of claim 2 wherein there are four diamond tipped threaded shanks extending from said substantially planar bottom surface of said conditioning block and wherein said diamond-tipped threaded shanks are disposed at the indices of a square.

4. The assembly of claim 1 further comprising a conditioning arm having one end coupled to said rotatable conditioning block and the other end coupled to means for pivoting said conditioning arm about a pivot point such that said rotatable conditioning block sweeps back and forth between said outer radius of said polishing pad and said inner radius of said polishing pad.

5. The apparatus of claim 4 further comprising:

a drive shaft having one end coupled to a ball, said ball engaging a socket formed in said rotatable conditioning block to form a flexible ball and socket joint, the end of said drive shaft opposite to said ball coupled to said conditioning arm.

6. The apparatus of claim 5 further comprising:

a variable speed drive motor attached to said conditioning arm and coupled to the end of said drive shaft, opposite to said ball, and said variable speed drive motor for rotating at varying rates said drive shaft and said rotatable conditioning block.

7. The apparatus of claim 4 wherein said means for pivoting said conditioning arm is a variable speed oscillating motor.

8. The apparatus of claim 1 further comprising:

reciprocating means coupled to said conditioning block, said reciprocating means for linearly moving said conditioning block between said outer radius of said polishing pad and said inner radius of said polishing pad.

9. The apparatus of claim 1 further comprising a wear-resistant surface plate attached to the substantially planar bottom surface of said conditioning block such that said discreet points extend beyond said wear-resistant surface plate.

10. The apparatus of claim 1 wherein said rotatable conditioning block has a diameter of between 0.5-2.0 inches.

11. A method of polishing a thin film formed over a semiconductor substrate comprising the steps of:

a) rotating a polishing pad;

b) placing a substrate on said rotating polishing pad such that said thin film to be polished is placed in direct contact with said polishing pad; and

c) conditioning said polishing pad by forming a plurality of grooves into said polishing pad, said grooves formed by rotating a conditioning block about an axis substantially perpendicular to said polishing pad, said rotatable conditioning blocks having a substantially planar bottom surface with a plurality of groove-generating discreet points extending from said substantially planar bottom surface while moving said rotating conditioning block between an outer radius of said polishing pad and an inner radius of said polishing pad.

12. The method of claim 11 wherein said conditioning block is rotated at a rate of between 200-2000 rotations per minute.

13. The method of claim 11 wherein said conditioning block sweeps between said outer radius of said polishing pad and said inner radius of said polishing pad at a rate of between one cycle to 15 cycles per minute.

14. The method of claim 11 wherein said conditioning block is moved between said outer radius of said polishing pad and said inner radius of said polishing pad at a variable rate.

15. The method of claim 14 wherein said conditioning block sweeps faster at said inner radius and said outer radius than at a center radius of said polishing pad, said center radius between said inner radius and said outer radius.

16. The method of claim 11 wherein said conditioning block rotates at a variable rate while moving between said inner radius of said polishing pad and said outer radius of said polishing pad.

17. The method of claim 16 wherein said conditioning block rotates faster when said conditioning block is at a center radius of said polishing pad than when said conditioning block is at said inner radius or said outer radius of said polishing pad, said center radius between said inner radius and said outer radius of said polishing pad.

18. The method of claim 11 wherein said conditioning block rotates at a variable rate while moving between said inner radius and said outer radius of said polishing pad and wherein said conditioning block moves between said inner radius and said outer radius of said polishing pad at a variable rate.

19. The method of claim 11 wherein said conditioning block is rotated and swept across said polishing pad in such a manner so as to modulate the center to edge removal rates of said thin film on said substrate.