Direct etch for thin film resistor using a hard mask

• US 5,547,896 A
• Filed: 02/13/1995
• Issued: 08/20/1996
• Est. Priority Date: 02/13/1995
• Status: Expired due to Term

• Current Assignee: Intersil Corporation (Renesas Electronics Corporation)
• Original Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Inventors: Gaul, Stephen J., Gasner, John T., McCarty, Chris A., Linn, Jack H.
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): BILODEAU, THOMA
• Application Number:
  US08/387,233
• Time in Patent Office: 554 Days
• Field of Search: 437/60, 437/245, 437/246, 437/918, 148/DIG. 136, 156/664, 257/537, 252/79.2, 216/16, 216/108, 216/104
• US Class Current: 438/384
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 28/24 with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
• CPC Class Codes: Y10S 148/136 Resistors

Abstract

In a method of etching a thin film resistor material, such as NiCr or CrSi, and of producing a thin film resistor, a non-photoresist hard mask is deposited on an exposed surface of thin film resistor material, a delineated portion of the hard mask is etched with a hydrogen peroxide etchant that does not affect the thin film resistor material to expose the material therebeneath, and the exposed thin film resistor material is etched with a second etchant that does not affect the hard mask. The second etchant may be sulfuric acid heated to greater than 125° C. for NiCr or a mixture of phosphoric acid, nitric acid and hydrofluoric acid for CrSi. The hard mask preferably comprises TiW.

Claims

1. A method of etching a thin film resistor in a semiconductor device comprising the steps of:

(a) depositing a thin film resistor material on a substrate and depositing a non-photoresist hard mask on an exposed surface of the thin film resistor material in a deposition chamber without breaking a vacuum in the deposition chamber;

(b) etching a delineated portion of the hard mask with a first etchant that does not affect the thin film resistor material to expose the material therebeneath; and

(c) wet etching the exposed thin film resistor material with a second etchant that does not affect the hard mask; and

(d) etching the remaining hard mask except the portions of the hard mask overlying selected portions of the thin film resistor material for contacting electrical interconnects.

2. The method of claim 1 where the thin film resistor material comprises NiCr and wherein the hard mask comprises one of TiW and molybdenum and the first etchant comprises hydrogen peroxide.

3. The method of claim 2 wherein the second etchant is sulfuric acid at a temperature greater than 125°

C.

4. The method of claim 1 where the thin film resistor material comprises CrSi and wherein the hard mask comprises one of TiW and molybdenum and the first etchant comprises hydrogen peroxide.

5. The method of claim 4 wherein the second etchant is a mixture of phosphoric acid, nitric acid and hydrofluoric acid.

6. The method of claim 1 further comprising the step of depositing electrical interconnects on the remaining hard mask portions.

7. The method of claim 1 where the hard mask comprises a material selected from the group of materials consisting of silicon dioxide, silicon nitride, titanium nitride, molybdenum, and titanium tungsten.

8. A method of making plural thin film resistors in a semiconductor device wherein the resistors have clean surfaces for minimal contact resistance with electrical interconnects in contact therewith, the method comprising the steps of:

(a) providing a thin film of resistor material on a surface of the semiconductor device and depositing a TiW mask on the film in a deposition chamber without breaking a vacuum in the deposition chamber;

(b) delineating the TiW mask to a pattern corresponding to multiple resistors;

(c) etching the delineated TiW mask with hydrogen peroxide to expose the film therebeneath;

(d) wet etching the exposed film with a second etchant to leave multiple thin film resistors beneath the delineated TiW mask;

(e) removing the remaining TiW mask; and

(f) applying electrical interconnects to each of the resistors,

whereby the plural resistors are free of contamination that may affect contact resistance with the interconnect.

9. The method of claim 8 wherein the resistor material comprises NiCr and the second etchant comprises sulfuric acid that is at a temperature greater than 125°

C.

10. The method of claim 8 wherein the resistor material comprises CrSi and the second etchant comprises a mixture of phosphoric acid, nitric acid and hydrofluoric acid.

11. A method of producing a thin film resistor comprising the steps of masking a portion of a NiCr film with a hard mask that is immune to the etching effects of sulfuric acid heated to greater than 125°

C., etching the hard mask with hydrogen peroxide that does not affect the film, and etching the film with sulfuric acid at a temperature greater than 125°

C.

23. The method of claim 11 further comprising the step of etching the remaining portion of the hard mask with hydrogen peroxide to thereby expose the NiCr film therebeneath.

24. The method of claim 23 further comprising the step of depositing electrical interconnects on the exposed NiCr film.

25. The method of claim 11 further comprising the step of etching the remaining portion of the hard mask except the portions of the hard mask overlying selected portions of the NiCr film for contacting electrical interconnects.

26. The method of claim 25 further comprising the step of depositing electrical interconnects on the remaining hard mask portions.

12. A method of producing a thin film resistor comprising the steps of masking a portion of a CrSi film with a hard mask that is immune to the etching effects of an etchant comprised of a mixture of phosphoric acid, nitric acid and hydrofluoric acid, etching the hard mask with hydrogen peroxide that does not affect the film, and etching the film with a mixture of phosphoric acid, nitric acid and hydrofluoric acid.

27. The method of claim 12 further comprising the step of etching the remaining portion of the hard mask with hydrogen peroxide to thereby expose the CrSi film therebeneath.

28. The method of claim 27 further comprising the step of depositing electrical interconnects on the exposed CrSi film.

29. The method of claim 12 further comprising the step of etching the remaining portion of the hard mask except the portions of the hard mask overlying selected portions of the CrSi film for contacting electrical interconnects.

30. The method of claim 29 further comprising the step of depositing electrical interconnects on the remaining hard mask portions.

13. A method of etching a thin film resistor in a semiconductor device comprising the steps of:

(a) depositing a thin film resistor comprising NiCr on a substrate and depositing a non-photoresist hard mask comprising one of TiW and molybdenum on an exposed surface of the thin film resistor;

(b) etching a delineated portion of the hard mask with a hydrogen peroxide etchant that does not affect the thin film resistor to expose the resistor therebeneath; and

(c) etching the exposed thin film resistor material with a second etchant that does not affect the hard mask;

(d) etching the remaining hard mask with the hydrogen peroxide etchant to thereby expose the thin film resistor therebeneath; and

(e) depositing electrical interconnects on the exposed thin film resistor.

14. The method of claim 13 wherein the second etchant is sulfuric acid at a temperature greater than 125°

C.

15. The method of claim 13 wherein the step of depositing the thin film resistor and depositing the hard mask thereon are carried out in a deposition chamber without breaking a vacuum in the deposition chamber.

16. A method of etching a thin film resistor in a semiconductor device comprising the steps of:

(a) depositing a thin film resistor material on a substrate and depositing a non-photoresist hard mask on an exposed surface of the thin film resistor material in a deposition chamber without breaking a vacuum in the deposition chamber;

(b) etching a delineated portion of the hard mask with a first etchant that does not affect the thin film resistor material to expose the material therebeneath; and

(c) wet etching the exposed thin film resistor material with a second etchant that does not affect the hard mask; and

(d) etching the remaining hard mask with the first etchant to thereby expose the thin film resistor material therebeneath.

17. The method of claim 16 where the thin film resistor material comprises NiCr and wherein the hard mask comprises one of TiW and molybdenum and the first etchant comprises hydrogen peroxide.

18. The method of claim 17 wherein the second etchant is sulfuric acid at a temperature greater than 125°

C.

19. The method of claim 16 where the thin film resistor material comprises CrSi and wherein the hard mask comprises one of TiW and molybdenum and the first etchant comprises hydrogen peroxide.

20. The method of claim 19 wherein the second etchant is a mixture of phosphoric acid, nitric acid and hydrofluoric acid.

21. The method of claim 16 further comprising the step of depositing electrical interconnects on the exposed thin film resistor material.

22. The method of claim 16 where the hard mask comprises a material selected from the group of materials consisting of silicon dioxide, silicon nitride, titanium nitride, molybdenum, and titanium tungsten.