Method for making an electronics module having air bridge protection without large area ablation

• US 5,548,099 A
• Filed: 09/13/1994
• Issued: 08/20/1996
• Est. Priority Date: 09/13/1994
• Status: Expired due to Term

• Current Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Original Assignee: Martin Marietta Corporation
• Inventors: Cole, Herbert S. Jr., Sitnik-Nieters, Theresa A.
• Primary Examiner(s): Ledynh, Bot L.
• Application Number:
  US08/304,920
• Time in Patent Office: 707 Days
• Field of Search: 437/209-213, 437/225, 427/96, 219/121.6, 219/121.67, 219/121.68, 219/121.69, 29/832, 29/841, 361/760-761, 361/783, 361/792-795, 361/803, 257/750, 257/758, 174/260, 174/261-264
• US Class Current: 219/121.69
• CPC Class Codes: H01L 2224/2402 Laminated, e.g. MCM-L type
• CPC Class Codes: H01L 2224/24227 the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82039 using a laser
• CPC Class Codes: H01L 23/29 characterised by the material , e.g. carbon interlayer dielectrics H01L23/5329
• CPC Class Codes: H01L 23/315 the encapsulation having a cavity
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: Y10T 29/4913 : Assembling to base an electrical component, e.g., capacitor, etc.

Abstract

In a method for preserving an air bridge structure on an integrated circuit chip, without sacrificing metallization routing area in an overlying high density interconnect structure, a protective layer is sublimed over the air bridge to provide mechanical strength while preventing contamination and deformation during processing. A high density interconnect structure is applied over the chip and protective layer. A small portion of the high density interconnect structure is removed from the area over the air bridge structure, and the protective layer is then sublimed away, leaving the resultant structure with an undamaged air bridge which is free of residue.

Claims

1. A method for making an electronics module, comprising the steps of:

(1) disposing a plurality of electronic chips on a substrate surface, at least some of the chips including contact pads, and at least one of the chips including a sensitive structure;

(2) encapsulating the sensitive structure with a sublimable protective layer thereby creating an encapsulating volume, the sublimable protective layer supporting the sensitive structure from all sides, and inhibiting the sensitive structure from processing contamination;

(3) applying at least one multilayer of a high density interconnect structure, comprising the steps of;

(a) applying a dielectric film layer over the chips and the substrate surface;

(b) providing a plurality of via openings in the dielectric film layer, the openings being disposed over at least some of the contact pads; and

(c) providing a pattern of electrical conductors on the film layer so that the conductors extend between the via openings so as to electrically connect selected contact pads;

(4) removing a portion of the multilayer of high density interconnect structure to provide a channel extending from the encapsulating volume through the high density interconnect structure to an exterior surface; and

(5) removing the protective layer from the encapsulating volume through the channel.

2. The method for making an electronics module according to claim 1, wherein the method is carried out at a temperature between about 240°

C. and 260°

C.

3. The method for making an electronics module according to claim 1, wherein the channel is orthogonal with respect to the substrate surface.

4. The method for making an electronics module according to claim 1, wherein the protective layer is an organic monomer.

5. The method for making an electronics module according to claim 4, wherein the protective layer is selected from the group consisting essentially of perylene, anthraquinone, quinalizarin and alizarin.

6. The method for making an electronics module according to claim 5, wherein the protective layer has a vapor pressure of greater to or equal than about 10 torr, at a temperature of about 170°

C.

7. The method of claim 1, wherein the step of removing the multilayer of high density interconnect structure to provide the channel comprises laser ablating the dielectric film layer in the area over the encapsulating volume.

8. The method of claim 1, wherein the step of removing the protective layer comprises heating the module to a temperature and pulling a vacuum sufficient to sublime the protective layer.

9. The method of claim 1, wherein the sensitive structure is an air bridge.

10. The method of claim 1, wherein the step of removing the protective layer leaves the sensitive structure essentially free of contamination.

11. The method of claim 1, wherein the encapsulating volume is substantially devoid of material.