Hall element for detecting a magnetic field perpendicular to a substrate

• US 5,548,151 A
• Filed: 02/07/1995
• Issued: 08/20/1996
• Est. Priority Date: 03/09/1994
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Maruyama, Ryoji, Fujii, Kanae, Funaki, Hideyuki, Mochizuki, Hiroshi
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US08/385,058
• Time in Patent Office: 560 Days
• Field of Search: 257/421, 257/426, 257/427, 257/507, 257/515, 257/773
• US Class Current: 257/421
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices

Abstract

In a Hall element, a semiconductor layer is surrounded by a first trench filled with an insulator. A first current supply portion of an n+-type semiconductor is disposed adjacent the semiconductor layer and the first trench. Second current supply portions are also disposed adjacent the semiconductor layer and the first trench and symmetrical with respect to the first current supply portion. Sensor portions of an n+-type semiconductor are disposed adjacent the semiconductor layer and the first trench at about the center between the first and second current supply portions, respectively. A magnetic flux perpendicular to the upper surface of the semiconductor layer can be detected by the foregoing arrangement.

Claims

1. A Hall element comprising:

a semiconductor layer of a first conductivity type having an upper surface and a side surface;

an insulator portion having a side surface adjacent the side surface of the semiconductor layer;

a first current supply portion of the first conductivity type disposed adjacent the side surface of the insulator portion;

a pair of second current supply portions of the first conductivity type disposed adjacent the side surface of the insulator portion; and

a pair of sensor portions of the first conductivity type disposed adjacent the side surface of the insulator portion, wherein the first current supply portion is disposed between the sensor portions, the first current supply portion and the sensor portions are disposed between the second current supply portions, and the Hall element comprises means for inducing a Hall voltage between the sensor portions with magnetic flux perpendicular to the upper surface of the semiconductor layer during current flowing between the first and second current supply portions along a current path.

2. The Hall element according to claim 1, further comprising an insulator layer disposed below the semiconductor layer and in contact with the insulator portion.

3. The Hall element according to claim 2, wherein the first and second current supply portions and the sensor portions abut the insulator layer.

4. The Hall element according to claim 1, further comprising:

a gate insulator layer disposed on the upper surface of the semiconductor layer;

a gate electrode disposed on the gate insulator layer; and

at least one of a depletion layer, an accumulation layer, and an inversion layer formed under the gate insulator layer when a bias voltage is applied to the gate electrode so that current between the first and second current supply portions can flow away from the upper surface of the semiconductor layer.

5. The Hall element according to claim 1, wherein the semiconductor layer is disposed between two sections of the insulator portion, and each section of the insulator portion is associated with a set of components including the first current supply portion, the second current supply portions, and the sensor portions.

6. The Hall element according to claim 5, wherein the semiconductor layer is surrounded by the insulator portion, the insulator portion has two sets of facing sides, and each set of facing sides is associated with a set of components including a first current supply portion, a pair of second current supply portions, and a pair of sensor portions.

7. The Hall element according to claim 6, wherein, for each set of facing sides, the first current supply portion, the second current supply portions, and the sensor portions are arranged substantially symmetrical with respect to a center of the semiconductor layer at a 90°

period.

8. The Hall element according to claim 1, wherein the semiconductor layer is divided by the insulator portion into a first region and a second region, and each region is associated with a set of components including a first current supply portion, a pair of second current supply portions, and a pair of sensor portions.

9. The Hall element according to claim 8, wherein, for each set associated with one of the regions of the semiconductor layer, the first current supply portion, the second current supply portions, and the sensor portions are arranged substantially symmetrical with respect to the insulator portion.

10. The Hall element according to claim 1, further comprising current path control means for lengthening the current path between the first and second current supply portions.

11. The Hall element according to claim 10, wherein the current path control means comprises a current path control portion of a second conductivity type disposed between the first and second current supply portions and allowing application of a reverse voltage between the semiconductor layer and the current path control portion.

12. The Hall element according to claim 11, wherein the current path control portion is distanced from the insulator portion further than the first and second current supply portions are distanced from the insulator portion.

13. The Hall element according to claim 11, further comprising an insulator layer disposed below the semiconductor layer and in contact with the insulator portion.

14. The Hall element according to claim 10, wherein the current path control means comprises a current path control portion of an insulated gate electrode disposed in the semiconductor layer between the first and second current supply portions and configured so that the current path between the first and second current supply portions is lengthened by forming one of a depletion layer, an accumulation layer and an inversion layer surrounding the insulated gate electrode when a bias voltage is applied to the insulated gate electrode.

15. The Hall element according to claim 1, wherein the semiconductor layer is formed on a substrate having an insulator surface.

16. The Hall element according to claim 1, wherein the semiconductor layer is formed on a semiconductor substrate of a second conductivity type.

17. The Hall element according to claim 1, further comprising a second conductivity type semiconductor layer disposed on the semiconductor layer of the first conductivity type.

18. A Hall element comprising:

a semiconductor layer of a first conductivity type having an upper surface; and

an insulator portion dividing the semiconductor layer into first and second current paths and providing a Hall current path between the first and second current paths, wherein the first and second current paths are substantially parallel with respect to one another so that a Hall current flows between the first and second current paths through the Hall current path when magnetic flux exists in a direction perpendicular to the upper surface of the semiconductor layer during current flowing along the first and second current paths.

19. A Hall element comprising:

a semiconductor layer of a first conductivity type having an upper surface and a side surface;

an insulator portion having a side surface adjacent the side surface of the semiconductor layer;

a first current supply portion of the first conductivity type disposed adjacent the side surface of the insulator portion;

a pair of second current supply portions of the first conductivity type disposed adjacent the side surface of the insulator portion so that a current between the first and second current supply portions has a current component perpendicular to a plane composed of an interface between the insulator portion and the semiconductor layer; and

a pair of sensor portions of the first conductivity type disposed adjacent the side surface of the insulator portion so that a Hall voltage is induced between the sensor portions with magnetic flux perpendicular to the upper surface of the semiconductor layer during current flowing between the first and second current supply portions.

20. A Hall element of a planar type semiconductor device comprising:

a substrate including an insulator surface;

a semiconductor layer of a first conductivity type disposed on the insulator surface of the substrate and having an upper surface and a side surface;

first and second current supply portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that current can flow between the first and second current supply portions; and

sensor portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that a Hall voltage due to magnetic flux perpendicular to the upper surface of the semiconductor layer can be induced between the sensor portions.

21. The Hall element according to claim 20, wherein the first and second current supply portions are disposed so that current between first and second current supply portions has a current component perpendicular to a surface including the first and second current supply portions.

22. A current detector comprising:

a magnetic yoke having a gap;

a wire carrying an object current and winding around the magnetic yoke; and

a Hall element including a semiconductor layer of a first conductivity type having an upper surface and a side surface, an insulator portion having a side surface adjacent the side surface of the semiconductor layer, a first current supply portion of the first conductivity type disposed adjacent the side surface of the insulator portion, a pair of second current supply portions of the first conductivity type disposed adjacent the side surface of the insulator portion, and a pair of sensor portions of the first conductivity type disposed adjacent the side surface of the insulator portion, wherein the first current supply portion is disposed between the sensor portions, the first current supply portion and the sensor portions are disposed between the second current supply portions, and the Hall element comprises means for inducing a Hall voltage between the sensor portions with magnetic flux perpendicular to the upper surface of the semiconductor layer during current flowing between the first and second current supply portions along a current path.

23. A current detector comprising:

a magnetic yoke having a gap;

a wire carrying an object current and winding around the magnetic yoke; and

a Hall element including a substrate including an insulator surface, a semiconductor layer of a first conductivity type disposed on the insulator surface of the substrate and having an upper surface and a side surface, first and second current supply portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that current can flow between the first and second current supply portions, and sensor portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that a Hall voltage due to magnetic flux perpendicular to the upper surface of the semiconductor layer can be induced between the sensor portions.