Apparatus and method for analyzing foreign matter on semiconductor wafers and for controlling the manufacturing process of semiconductor devices

• US 5,550,372 A
• Filed: 10/16/1995
• Issued: 08/27/1996
• Est. Priority Date: 10/24/1994
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Yasue, Takao
• Primary Examiner(s): Berman, Jack I.
• Application Number:
  US08/543,826
• Time in Patent Office: 316 Days
• Field of Search: 250/310, 250/307
• US Class Current: 250/310
• CPC Class Codes: G01N 23/2252 Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]

Abstract

A device for analyzing foreign matter on semiconductor wafers is provided, which is capable of analyzing a great deal of foreign matter rapidly without requiring the higher level decision capabilities of a skilled analyst. The device for analyzing foreign matter on semiconductor wafers includes a scanning electron microscope (SEM) which obtains the composition ratios of each element of a plurality of foreign matter adhered to semiconductor wafers. A foreign matter plotting section is provided to obtain the distribution of the composition ratios of the plurality of foreign matter on the basis of a result obtained by the SEM. A foreign matter classifying process section classifies the plurality of foreign matter on the basis of the distribution. A foreign matter identifying process section compares the foreign matter classification result with data stored in advance in a foreign matter data base, thereby identifying the foreign matter type.

Claims

1. An analyzer for analyzing foreign matter comprising:

an analyzing section for obtaining composition ratios for each element of a plurality of foreign matter adhered to a semiconductor wafer;

a foreign matter distribution generation section for obtaining a distribution of each of the composition ratios of the plurality of foreign matter on the basis of a result obtained by said analyzing section;

a foreign matter classifying section for classflying the plurality of foreign matter on the basis of the distribution obtained by said foreign matter distribution generation section; and

a foreign matter identifying section for comparing a result obtained by said foreign matter classflying section with predetermined foreign matter data, thereby identifying the foreign matter type.

2. The analyzer for analyzing foreign matter according to claim 1 further comprising:

a foreign matter inspecting section for obtaining positions of the plurality of foreign matter on the semiconductor wafers, respectively;

wherein said analyzing section analyzes a composition ratio of each element of the plurality of foreign matter on the basis of the positions output by said foreign matter inspecting section.

3. An apparatus for controlling the manufacturing of a semiconductor device comprising:

an analyzing section for obtaining composition ratios for each element of a plurality of foreign matter adhered to semiconductor wafers;

a foreign matter distribution generation section for obtaining a distribution of each of the composition ratios of the plurality of foreign matter on the basis of a result obtained by said analyzing section;

a foreign matter classifying section for classifying the plurality of foreign matter on the basis of the distribution obtained by said foreign matter distribution generation section;

a foreign matter identifying section for comparing a results obtained by said foreign matter classifying section with predetermined foreign matter data, thereby identifying the foreign matter type; and

a determining section for comparing the number of foreign matter belonging to each type of the foreign matter identified by said foreign matter identifying section with predetermined number of allowable foreign matter data, thereby determining whether the semiconductor device manufacturing process should be continued.

4. A method for analyzing foreign matter comprising the steps of:

a first step of obtaining composition ratios for each element of a plurality of foreign matter adhered to semiconductor wafers;

a second step of obtaining a distribution for each composition ratio of the plurality of foreign matter on the basis of a result obtained by said first step;

a third step of classifying the plurality of foreign matter on the basis of the distribution obtained by said second step; and

a fourth step of comparing a result obtained by said third step with predetermined foreign matter data, thereby identifying foreign matter type.

5. A method for analyzing foreign matter comprising the steps of:

a first step of obtaining positions of a plurality of foreign matter on semiconductor wafers, respectively;

a second step of obtaining composition ratios of each element of the plurality of foreign matter adhered to the semiconductor wafers;

a third step of obtaining a distribution for each composition ratio of the plurality of foreign matter on the basis of a result obtained by said second step;

a fourth step of classflying the plurality of foreign matter on the basis of the distribution obtained by said third step; and

a fifth step for comparing a result obtained by said fourth step with predetermined foreign matter data, thereby identifying foreign matter type.

6. A method for controlling manufacturing process of a semiconductor device comprising the steps of:

a first step of obtaining composition ratios of each element of a plurality of foreign matter adhered to semiconductor wafers;

a second step of obtaining a distribution for each composition ratios of the plurality of foreign matters on the basis of a result obtained by said first step;

a third step of classifying the plurality of foreign matter on the basis of the distribution obtained by said second step;

a fourth step of comparing a result obtained by said third step with predetermined foreign matter data, thereby identifying foreign matter type; and

a fifth step of comparing the number of foreign matter belonging to each type of foreign matter identified by said fourth step with predetermined number of allowable foreign matter data, thereby determining whether the semiconductor device manufacturing process should be continued.