Semiconductor device including a plurality of interconnected functional integrated circuit blocks operating at high and ultrahigh frequencies, each having a DC distribution line
First Claim
1. A semiconductor device comprising:
- a plurality of interconnected high frequency and ultrahigh frequency functional blocks positioned in close proximity and which together form an integrated circuit including at least an ultra high frequency amplifier block, said blocks including transistor stages operating at different frequencies, a DC voltage distribution line common to said blocks, means for biasing each block by means of a DC supply voltage of said DC voltage distribution line, said blocks also comprising power-matched circuits operating in the ultrahigh frequency range, wherein all of the high frequency and ultrahigh frequency functional blocks are integrated on one and the same substrate and, in order to provide the DC supply voltage of all functional blocks by means of said DC voltage distribution line which is common to all of the blocks, said device includes a frequency stabilization circuit for said amplifier block and another frequency stabilization circuit for the common DC voltage distribution line, and self-biasing circuits for biasing each block by means of said DC supply voltage.
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Accused Products
Abstract
A semiconductor device including a plurality of interconnected functional blocks of integrated circuits, which include at least an amplifier block, the blocks operating at high and ultrahigh frequencies and having different frequencies with each block comprising at least a DC distribution line. Each block is polarized by the DC voltage of its distribution line and the blocks also include power-matched circuits operating in the ultrahigh frequency range. All of the high frequency and ultrahigh frequency functional blocks are integrated on one and the same substrate for realising the DC supply of all functional blocks at one and the same DC voltage value by one and the same DC voltage distribution line which is common to all the blocks. This is achieved, at least in part by the provision of frequency stabilization circuits for each individual functional amplifier block and also for the common DC distribution line, as well as autopolarization circuits for polarizing each block from the single DC voltage.
17 Citations
25 Claims
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1. A semiconductor device comprising:
- a plurality of interconnected high frequency and ultrahigh frequency functional blocks positioned in close proximity and which together form an integrated circuit including at least an ultra high frequency amplifier block, said blocks including transistor stages operating at different frequencies, a DC voltage distribution line common to said blocks, means for biasing each block by means of a DC supply voltage of said DC voltage distribution line, said blocks also comprising power-matched circuits operating in the ultrahigh frequency range, wherein all of the high frequency and ultrahigh frequency functional blocks are integrated on one and the same substrate and, in order to provide the DC supply voltage of all functional blocks by means of said DC voltage distribution line which is common to all of the blocks, said device includes a frequency stabilization circuit for said amplifier block and another frequency stabilization circuit for the common DC voltage distribution line, and self-biasing circuits for biasing each block by means of said DC supply voltage.
- View Dependent Claims (2)
- 3. A semiconductor device comprising a plurality of interconnected functional blocks which form an integrated circuit including at least an amplifier block and with said blocks operating at high and ultrahigh frequencies and at different frequencies, a DC supply voltage distribution line common to all of the blocks, means for biasing each block by means of the DC supply voltage of said distribution line, said blocks also comprising power-matched circuits operating in the ultrahigh frequency range, wherein all of the high frequency and ultrahigh frequency functional blocks are integrated on one and the same substrate, a frequency stabilization circuit for said amplifier block and a further frequency stabilization circuit for the common DC supply voltage distribution line, self-biasing circuits for biasing each block by means of said DC supply voltage, wherein the frequency stabilization circuit for the common DC distribution line comprises at least a filter for said line, and in that in each functional block formed by transistor stages the frequency stabilization circuit comprises a filter in at least one of its transistor stages, wherein in an amplifier block including transistor stages operating at ultrahigh frequencies the self-biasing circuit comprises a respective resistor between the respective drains of the transistors of each stage and a common line for determining the drain voltage, a respective resistor between the source and ground for determining the source voltage, and a respective connection between the gate and ground for determining the zero gate voltage, and wherein each respective source is decoupled by means of a respective capacitance connected between the respective source and ground.
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13. A semiconductor device comprising:
- a plurality of interconnected functional blocks forming an integrated circuit with certain blocks operating at different frequencies and formed of series transistor stages,
an ultrahigh frequency amplifier block having power matched circuit means for operation at ultrahigh frequencies, and functional blocks operating at high frequencies with each individual functional block comprising; a DC voltage distribution line and a ground line for supplying said series transistor stages with a positive biasing voltage, wherein all of the high frequency and ultra high frequency functional blocks are integrated on one and the same substrate and are supplied by one and the same biasing voltage by means of one and the same DC voltage distribution line and one and the same ground line and which are common to all of the functional blocks, wherein, for achieving a common integrated circuit and a common DC supply, the device comprises; a frequency stabilization circuit including an isolating capacitor and a serial dampening resistor coupled between said common DC voltage distribution line and said common ground line, biasing circuits, operating as self-biasing circuits, in all of the functional blocks, for biasing transistor drain, source and gate of each transistor stage by means of said common DC voltage distribution line and common ground line, a frequency stabilization circuit applied to one transistor stage in a said high frequency block and including a drain resistor connected between the drain of the stage transistor and said common DC distribution line, and a drain decoupling capacitor connected to said common ground line, and a further frequency stabilization circuit applied to all transistor stages in said ultrahigh frequency amplifier block and comprising an isolating capacitor and a serial dampening resistor decoupling the drain biasing circuit of the transistor stage to the common ground line. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
- a plurality of interconnected functional blocks forming an integrated circuit with certain blocks operating at different frequencies and formed of series transistor stages,
Specification