Plasma processing apparatus with a rotating electromagnetic field

• US 5,554,223 A
• Filed: 03/04/1994
• Issued: 09/10/1996
• Est. Priority Date: 03/06/1993
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Imahashi, Issei
• Primary Examiner(s): Kunemund, Robert
• Assistant Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US08/205,798
• Time in Patent Office: 921 Days
• Field of Search: 118/723 AN, 118/723 I, 118/723 MP, 118/723 E, 156/345, 204/298.39, 204/298.06, 315/111.21, 315/111.41, 315/111.51, 315/111.71
• US Class Current: 118/723.00I
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32678 Electron cyclotron resonance
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

A plasma process apparatus includes a high-vacuum container in which a semiconductor wafer is horizontally mounted on a susceptor, and into which a process gas such as an etching gas is supplied. Between the susceptor and the container a high-frequency voltage is applied. Around the outer periphery of the container, four high-frequency coils are arranged at given intervals in a circumferential direction. The coils apply a high-frequency power having phase difference of π/2 between the adjacent coils, into the container, so that a high-frequency rotating electromagnetic field rotating on a horizontal plane is formed in the container thereby generating a plasma of the process gas. The surface of the semiconductor wafer is processed by the plasma.

Claims

1. A plasma process apparatus comprising:

a process container having a peripheral wall, an upper end wall, a lower end wall, and a process chamber surrounded by the walls;

means for supporting an object to be processed having a processed surface in the process chamber;

means for feeding a process gas into the process chamber; and

induction means arranged outside the process container and applying a high-frequency power to form in the process chamber an induction field rotating in synchronism with the high-frequency power along a plane substantially parallel to the processed surface and to supply electromagnetic waves, thereby generating a plasma of the process gas, when a high-frequency voltage is applied thereto.

2. A plasma process apparatus according to claim 1, wherein said supporting means includes a susceptor for supporting the object to be processed so that the one end of the process container and the processed surface face each other, and said induction means includes a plurality of high-frequency coils arranged at intervals along the peripheral wall of the process container and power supply means for applying high-frequency voltages of different phases to the high-frequency coils.

3. A plasma process apparatus according to claim 1, wherein said supporting means includes a susceptor for supporting the object to be processed so that the one end of the process container and the processed surface face each other, and said induction means includes at least three high-frequency coils arranged at intervals along the peripheral wall of the process container and power supply means for applying high-frequency voltages with a phase difference of 2π

per coil number to the high-frequency coils, individually, therein forming a rotating electromagnetic field in the process chamber.

4. A plasma process apparatus according to claim 1, wherein said supporting means includes a susceptor for supporting the object to be processed so that the one end of the process container and the processed surface face each other, and said induction means includes two high-frequency coils arranged opposite to each other along the peripheral wall of the process container and power supply means for applying high-frequency voltages with a phase difference of 180°

to the high-frequency coils, individually.

5. A plasma process apparatus according to claim 1, which further comprises means for forming a high-frequency electric field perpendicular to said plane.

6. A plasma process apparatus according to claim 1, further comprising:

means for generating a horizontal magnetic field in a plasma generating region, said plasma generating region being defined between the object to be processed and the upper end wall; and

means for generating a vertical electric field in the plasma generating region and generating, in conjunction with the horizontal magnetic field, a plasma of the process gas in the plasma generating region, wherein said supporting means includes a susceptor for supporting the object to be processed so that the one end of the process container and the processed surface face each other, said induction means includes a plurality of high-frequency coils arranged at intervals outside and along said peripheral wall of the process container and power supply means for applying high-frequency voltages of different phases to the high-frequency coils, and said vertical electric field generating means includes means for applying a high-frequency electric voltage between the susceptor and the upper end wall.

7. A plasma process apparatus according to claim 6, wherein said upper and lower end walls are formed of an electrical conductor, said peripheral wall includes an upper portion defining the plasma generating region and made of a dielectric material and a lower portion situated between the upper portion and the lower end wall and formed of an electrical conductor, and said plurality of high-frequency coils are arranged along the outer periphery of the upper portion.

8. A plasma process apparatus according to claim 7, wherein said high-frequency electric field applying means includes means for grounding the upper end wall and applying a negative voltage to the susceptor.

9. A plasma process apparatus comprising:

a process container containing at least one object to be processed having a processed surface;

induction means adapted to form in the process container an electromagnetic field rotating along a plane substantially parallel to the processed surface and to supply electromagnetic waves, therein generating plasma of the process gas, when a high-frequency voltage is applied thereto; and

means for reducing the pressure in the process container to 0.005 Tort during processing.

10. A plasma process apparatus according to claim 9, wherein said process container has a peripheral wall formed of a dielectric, and said induction means includes a plurality of high-frequency coils arranged around and along the peripheral wall, and which further comprises a destaticized sheet interposed between the high-frequency coils and the peripheral wall.

11. A plasma process apparatus according to claim 9, wherein said induction means further comprises a plurality of high-frequency coils arranged around and along the peripheral wall, and a destaticized sheet interposed between the high-frequency coils and the peripheral wall, wherein each said high-frequency coil is a coil bent so as to extend along the peripheral wall.