Method and apparatus for improving interfacial adhesion between a polymer and a metal

• US 5,554,569 A
• Filed: 06/06/1994
• Issued: 09/10/1996
• Est. Priority Date: 06/06/1994
• Status: Expired due to Fees

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Ganesan, Sankaranarayanan, Berg, Howard M.
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US08/254,842
• Time in Patent Office: 827 Days
• Field of Search: 437/207, 437/209, 437/214, 437/217, 437/218, 437/219, 437/220
• US Class Current: 29/827
• CPC Class Codes: H01L 21/4821 Flat leads, e.g. lead frames with or without insulating supports
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83385 Shape, e.g. interlocking features
• CPC Class Codes: H01L 23/49503 characterised by the die pad
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01327 Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/15747 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: Y10S 438/964 : Roughened surface
• CPC Class Codes: Y10T 29/49121 : Beam lead frame or beam lead device
• CPC Class Codes: Y10T 29/49171 : with encapsulating

Abstract

A leadframe (11) and a method for improving adhesion of a polymer (17, 19) to the leadframe (11). The leadframe (11) has a flag (14) having a top surface (15) and a bottom surface (18), and leads (12). Microscopic locking features (31) are formed in the top surface (15) and the bottom surface (18) of flag (14) by bombarding the flag (14) with a grit material. Thus, the top and bottom surfaces (14, 18) are roughened. A semiconductor die (13) is attached to the flag (14) by a die attach material (17) and the flag (13), the semiconductor material (13), and portions of the leads (12) are encapsulated by a molding compound. The pits improve the adhesion of the die attach material (17) and the molding compound (19) to the leadframe (11).

Claims

1. A method for improving an interfacial adhesion between a polymer and one of a metal surface or a metal alloy surface, comprising the steps of:

providing the one of a metal surface or a metal alloy surface;

bombarding the one of a metal surface or a metal alloy surface with a grit material, the grit material suspended in a gaseous carrier medium; and

encapsulating a portion of the one of a metal surface or a metal alloy surface with a molding compound.

2. The method of claim 1, wherein the step of bombarding the one of a metal surface or a metal alloy surface with a grit material further comprises gritblasting the one of a metal surface or a metal alloy surface.

3. The method of claim 1, wherein the step of providing the one of a metal surface or a metal alloy surface includes providing a semiconductor leadframe having a surface, the semiconductor leadframe selected from the group consisting of a metal and a metal alloy.

4. The method of claim 3, wherein the step of providing a semiconductor leadframe includes providing a copper semiconductor leadframe.

5. The method of claim 3, wherein the step of bombarding the one of a metal surface or a metal alloy surface with a grit material includes bombarding the one of a metal surface or a metal alloy surface until the surface of one of a metal surface or a metal alloy surface has microscopic locking features.

6. The method of claim 1, wherein the step of encapsulating a portion of the one of a metal surface or a metal alloy surface with a molding compound includes mounting a semiconductor die to the portion of the one of a metal surface or a metal alloy surface.

7. The method of claim 1, wherein the step of bombarding the one of a metal or metal alloy surface with a grit material includes altering the one of a metal or metal alloy surface to have undulations.

8. A method for improving interfacial adhesion between a polymer and a semiconductor leadframe, comprising the steps of:

providing the semiconductor leadframe;

roughening a portion of the semiconductor leadframe using a grit material carried via a gaseous medium;

mounting at least one semiconductor die to the semiconductor leadframe; and

encapsulating the at least one semiconductor die and a portion of the semiconductor leadframe in the polymer.

9. The method of claim 8, wherein the step of providing the semiconductor leadframe includes providing the semiconductor leadframe as a copper alloy.

10. The method of claim 8, wherein the step of providing the semiconductor leadframe includes providing the semiconductor leadframe as an iron-nickel alloy.

11. The method of claim 8, wherein the step of providing the semiconductor leadframe includes providing the semiconductor leadframe plated with a metal selected from the group palladium-nickel alloy, nickel, silver, and gold.

12. The method of claim 8, wherein the step of roughening a portion of the semiconductor leadframe includes roughening a portion of the semiconductor leadframe includes using a grit material selected from the group consisting of sand, silicon dioxide, aluminum oxide, silicon carbide, and bicarbonates.

13. The method of claim 8, wherein the step of roughening a portion of the semiconductor leadframe includes blowing the grit material at the portion of the semiconductor leadframe in the gaseous carrier medium, wherein the grit material arrives at the semiconductor leadframe at a pressure ranging between approximately 0.20 megaPascals and approximately 0.70 megaPascals.

14. The method of claim 8, wherein the step of roughening a portion of the semiconductor leadframe includes providing the gaseous carrier medium as a gas selected from the group consisting of nitrogen, argon, and air.

15. The method of claim 8, wherein the step of roughening a portion of the semiconductor leadframe includes roughening a plurality of portions of the semiconductor leadframe.

16. The method of claim 8, wherein the step of roughening a portion of the semiconductor leadframe includes forming microscopic locking features on the semiconductor leadframe.