In situ removal of contaminants from the interior surfaces of an ion beam implanter
First Claim
1. A method for removing contaminant material adhering to interior surfaces of an ion beam implanter, the method comprising the steps of:
- a) extracting ions from source materials and forming the ions into an ion beam that traverses a beam path through an evacuated region along a trajectory to an ion implantation chamber;
b) adjusting the trajectory of the ion beam to cause the ion beam to strike interior surfaces of the implanter in contact with the evacuated region to dislodge the contaminant material from the interior surfaces; and
c) removing the dislodged contaminant material from the evacuated region of the implanter.
4 Assignments
0 Petitions
Accused Products
Abstract
An in situ method of removing contaminant material adhering to interior surfaces of an ion beam implanter is disclosed. The method includes the steps of: extracting ions from source materials and forming the ions into an ion beam that traverses a beam path through an evacuated region to an ion implantation chamber; providing a control means for controlling a trajectory of the ion beam within the evacuated region; utilizing the control means to direct the ion beam to strike interior surfaces of the ion beam implanter in contact with the evacuated region to dislodge the contaminant material; and removing the contaminant material from the evacuated region of the implanter.
90 Citations
36 Claims
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1. A method for removing contaminant material adhering to interior surfaces of an ion beam implanter, the method comprising the steps of:
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a) extracting ions from source materials and forming the ions into an ion beam that traverses a beam path through an evacuated region along a trajectory to an ion implantation chamber; b) adjusting the trajectory of the ion beam to cause the ion beam to strike interior surfaces of the implanter in contact with the evacuated region to dislodge the contaminant material from the interior surfaces; and c) removing the dislodged contaminant material from the evacuated region of the implanter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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- 13. A method of dislodging deposited contaminant material from interior surfaces of an ion beam implanter, the method comprising the step of adjusting a magnetic field strength of a mass analyzing magnet through which ions moving along a path of travel from an ion source to an implantation station to deflect the ions along paths that cause ions to strike the interior surfaces thereby dislodging the deposited contaminant material.
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20. An ion implanter for treating a workpiece comprising:
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a) an ion source for providing ions and for emitting said ions from a source chamber having one or more ion exit apertures; b) electrode structure positioned in relation to the one or more ion exit apertures of the source chamber for causing ions exiting the source chamber to form an ion beam; c) ion beam defining structure bounding an evacuated region that defines an ion beam travel path from the electrode structure; d) an ion implantation chamber including structure for supporting a workpiece that intercepts the ions entering the implantation chamber after traversing the beam travel path from the source to the implantation chamber; e) a material source for introducing ionization materials into the ion source chamber which are ionized and leave the source chamber to chemically interact with contaminants that contact the structure bounding the evaluated region of the ion beam implanter during ion beam treatment of workpieces placed within the ion implantation chamber; f) an implantation controller for controlling ion beam movement through the evacuated region from the source to the implantation chamber; and g) a pump for removing dislodged contaminant material from the evacuated region of the ion implanter. - View Dependent Claims (21, 22)
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23. A method for removing contaminant material adhering to interior surfaces of an ion beam implanter, the method comprising the steps of:
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a) extracting ions from source materials that combine with contaminant materials to form compounds made up of constituents of the ion source material and the contaminant materials; b) forming the ions into an ion beam that traverses a beam path through an evacuated region along a trajectory to an ion implantation chamber; c) controlling the ion beam to cause the ion beam to strike interior surfaces of the implanter in contact with the evacuated region to dislodge the contaminant material from the interior surfaces and form said compounds; and c) removing the compounds from the evacuated region of the implanter.
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24. Apparatus for removing contaminant material adhering to interior surfaces of an ion beam implanter comprising:
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a) means for extracting ions from source materials and forming the ions into an ion beam that traverses a beam path through an evacuated region along a trajectory to an ion implantation chamber; b) means for adjusting the trajectory of the ion beam to cause the ion beam to strike interior surfaces of the implanter in contact with the evacuated region to dislodge the contaminant material from the interior surfaces; and c) means for removing dislodged contaminant material from the evacuated region of the implanter. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. An ion implanter for treating a workpiece comprising:
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a) an ion source for providing ions and for emitting said ions from a source chamber for ion treatment of a workpiece; b) an ion implantation chamber having a support for a workpiece placed within the ion implantation chamber that intercepts the ions entering the implantation chamber after said ions traverse a beam travel path from the source to the implantation chamber; c) ion beam defining structure bounding an evacuated region that defines the ion beam travel path from the ion source to the ion implantation chamber; d) an implantation controller for controlling ion beam movement through the evacuated region from the ion source to the implantation chamber; e) means for removing contaminant material from an evacuated region of the ion implantation chamber; and f) structure for in-situ removal of contaminants from the evacuated region within the ion implantation chamber comprising; i) first and second conductive electrodes in contact with the evacuated region of the ion implantation chamber wherein one conductive electrode of said first and second conductive electrodes is positioned to promote formation of an ion plasma within the implantation chamber wherein ions in the plasma combine with contaminants at a region in close proximity to said one conductive electrode; and ii) biasing means for applying an electric potential between the first and second conductive electrodes to maintain the ion plasma in a region of the one conductive electrode. - View Dependent Claims (35, 36)
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Specification