Six-transistor cell with wide bit-line pitch, double words lines, and bit-line contact shared among four cells

• US 5,554,874 A
• Filed: 06/05/1995
• Issued: 09/10/1996
• Est. Priority Date: 06/05/1995
• Status: Expired due to Term

• Current Assignee: Quantum Effect Design, Inc.
• Original Assignee: Quantum Effect Design, Inc.
• Inventors: Doluca, Sinan
• Primary Examiner(s): Ngo, Ngan V.
• Application Number:
  US08/461,019
• Time in Patent Office: 463 Days
• Field of Search: 257/903, 257/904, 257/390, 257/401, 365/154, 365/156, 365/188
• US Class Current: 257/390
• CPC Class Codes: G11C 11/412 using field-effect transistors only
• CPC Class Codes: G11C 11/417 for memory cells of the field-effect type
• CPC Class Codes: G11C 2211/4013 Memory devices with multiple cells per bit, e.g. twin-cells
• CPC Class Codes: G11C 7/18 Bit line organisation; Bit line lay-out
• CPC Class Codes: H10B 10/12 comprising a MOSFET load element
• CPC Class Codes: Y10S 257/903 FET configuration adapted for use as static memory cell
• CPC Class Codes: Y10S 257/904 with passive components,, e.g. polysilicon resistors

Abstract

A static RAM memory is arranged into groups of four cells sharing a single active region with a contact to one of the bit lines. The shared active region forms the sources of four access transistors. The group of four cells requires only one pair of bit lines instead of the usual two pairs of bit lines. Thus a pair of bit lines occurs for every two cells rather than for every cell. This increases the bit-line pitch and facilitates design and layout of the sense amps. Since only one of the four cells can drive the bit lines at any time, four word lines are used instead of only two. Each cell has two word lines crossing over it, and the cells in a row alternately connect to one or the other word line. Since word-line drivers and decoders are simpler and easier to lay out than the sense amps, the tighter word-line pitch is acceptable. An unused metal line occurs for every two columns of cells. The bit lines are shielded from this unused metal line by power and ground lines. Thus the shielded metal line is ideal for system interconnect through the RAM when the RAM is embedded in a larger system.

Claims

1. An integrated circuit static random-access memory comprising:

a substrate of semiconductor material of a first conductivity type;

an array of memory cells fabricated in the substrate, the cells arranged in rows and columns;

each memory cell in the array of memory cells comprising;

a cross-coupled pair of inverters for storing one bit of data, a first inverter having a first n-channel pull-down transistor and a second inverter having a second n-channel pull-down transistor, each n-channel transistor having a drain diffusion and a gate;

a first access transistor, having a drain diffusion electrically coupled to the drain diffusion of the first n-channel pull-down transistor and electrically coupled to the gate of the second n-channel pull-down transistor of the cross-coupled pair of inverters, the first access transistor having a source diffusion and a gate;

a second access transistor, having a drain diffusion electrically coupled to the drain diffusion of the second n-channel pull-down transistor and electrically coupled to the gate of the first n-channel pull-down transistor of the cross-coupled pair of inverters, the second access transistor having a source diffusion and a gate;

the drain diffusion of the first access transistor being formed in common with the drain diffusion of the first n-channel pull-down transistor, and the drain diffusion of the second access transistor being formed in common with the drain diffusion of the second n-channel pull-down transistor;

the array having a group of four cells of the memory cells disposed in a mutually contiguous relation to each other in a first row and in a second row adjacent to the first row, and in a first column and in a second column adjacent to the first column; and

the source diffusions of the first access transistors of each cell in the group of four cells being formed in common in a common diffusion area, the first access transistors of the group of four cells being electrically and physically connected to each other by the common diffusion area and not by a metal layer;

whereby the first access transistor in each cell in the group of four cells shares the common diffusion area.

2. The memory of claim 1 wherein a bit line crosses the group of four cells in a second metal layer, the bit line electrically connecting to the source diffusions of the first access transistors through a single metal-to-silicon contact from the second metal layer to the common diffusion area, wherein only one contact from the bit line to the common diffusion area electrically connects the bit line to four access transistors in four cells.

3. The memory of claim 2 wherein the single metal-to-silicon contact from the second metal layer to the common diffusion area comprises a via from the bit line in the second metal layer to a first metal layer and a contact from the first metal layer to the common diffusion area.

4. The memory of claim 2 wherein the common diffusion area is disposed substantially in a geometric center of the group of four cells.

5. The memory of claim 2 wherein two word lines cross over each cell in each row of cells in the array, each row of cells comprising even cells alternating with odd cells, a first word line connecting to the gates of the first and second access transistors for even cells and a second word line connecting to the gates of the first and second access transistors for odd cells.

6. The memory of claim 5 wherein each cell further comprises:

a local polysilicon line forming the gates of the first and second access transistors in the cell, the local polysilicon line being connected to other cells only by metal and not by polysilicon, the local polysilicon line not being electrically connected to any adjacent cell;

wherein the first and second word lines cross over each cell in a third metal layer, each even cell having a contact from the first word line in third metal layer to the local polysilicon line, and each odd cell having a contact from the second word line in third metal layer to the local polysilicon line.

7. The memory of claim 6 wherein the third metal layer is disposed above the second metal layer, the third metal layer crossing each row of cells in a direction substantially parallel to the rows but substantially perpendicular to the columns of cells and the bit line in the second metal layer.

8. The memory of claim 6 wherein the array has two word lines for each row of cells but one pair of bit lines for each pair of columns, the group of four cells having four word lines which select no more than one of the four cells for access to the pair of bit lines, the pair of bit lines including the bit line connected to the first access transistors by the common diffusion area in a center of the four cells and a complementary bit line connected to the source diffusion of the second access transistors.

9. The memory of claim 8 wherein the complementary bit line is connected to the second access transistors by two additional common diffusion areas at a top edge and a bottom edge of the group of four cells, the additional common diffusion area at the top edge of the group of four cells being shared with two upper cells in the group of four cells and two cells in an upper adjacent group of four cells abutting the group of four cells at the top edge, while the additional common diffusion area at the bottom edge of the group of four cells being shared with two lower cells in the group of four cells and two cells in a lower adjacent group of four cells abutting the group of four cells at the bottom edge,

wherein the bit line is connected to the group of four cells in the center of the group of four cells but the complementary bit line is connected to the group of four cells at the top and bottom edges of the group of four cells.

10. A memory comprising:

a plurality of memory cells arranged in an array of rows and columns, a row and a column intersecting at a single cell, the columns being further arranged into non-overlapping column-pairs each consisting of two adjacent columns;

a first and a second word line for each row of memory cells, the first word line selecting a first plurality of memory cells in the row and the second word line selecting a second plurality of memory cells in the row, each memory cell in the first plurality of cells being adjacent on both sides to memory cells in the second plurality of cells in an alternating sequence memory cells in the row of memory cells;

a pair of bit lines for every column-pair of memory cells, the pair of bit lines including a true bit line and a complement bit line together communicating one bit of data;

each cell in the plurality of memory cells comprising;

storage means for storing one bit of data;

first access transistor means for coupling the storage means to the true bit line; and

second access transistor means for coupling the storage means to the complement bit line;

the first and the second access transistor means having control gates coupled to a local word line for the cell, the local word line being coupled to the first word line when the cell is in the first plurality of cells but coupled to the second word line when the cell is in the second plurality of cells;

whereby each memory cell connects to one of the two word lines crossing the cell and one pair of bit lines connects to two columns of cells.

11. The memory of claim 10 further comprising:

a four-way shared active region on a substrate, the four-way shared active region being a source terminal of the first access transistor means for each of four memory cells in two adjacent rows and a column-pair of memory cells, the four-way shared active region being electrically connected to the true bit line for the column-pair by a shared contact;

wherein a single active region with one shared contact connects the true bit line to four cells.

12. The memory of claim 11 wherein four memory cells in the two adjacent rows and the column-pair of memory cells comprise a first quad of cells, the memory further comprising:

a second quad adjacent to and above the first quad of cells and being in the column-pair of memory cells containing the first quad, the second quad containing four cells;

a second four-way shared active region disposed between the first and second quad of cells, the second shared active region being a source terminal of the second access transistor means for (i) two upper cells in the first quad, and (ii) two lower cells in the second quad, the two upper cells and the two lower cells being adjacent;

the second four-way shared active region being electrically connected to the complement bit line for the column-pair by a second shared contact;

wherein a single active region with one shared contact connects the complement bit line to four cells.

13. The memory of claim 12 wherein each column-pair comprises a plurality of non-overlapping contiguous quads of four cells, with the four-way shared active region disposed substantially near the middle of the four cells in each of the quads, and with the second four-way shared active region disposed substantially between adjacent quads, wherein the true bit line for the column-pair connects to the access transistor means for each cell in each quad through the shared contacts near the middle of the four cells in each of the quads, while the complement bit line for the column-pair connects to the access transistor means for each cell in each quad through the second shared contacts between adjacent quads.

14. The memory of claim 13 wherein the pitch between the true bit lines for the column-pairs is larger than the pitch between the word lines for the rows.

15. The memory of claim 13 wherein each cell further comprises:

two third-layer metal channels for the first and second word lines for connecting the word lines in adjacent cells in a row; and

a second-layer metal channel for the true bit line when the cell is in the first plurality of cells or for the complement bit line when the cell is in the second plurality of cells.

16. The memory of claim 15 wherein the memory is embedded in a system, and wherein each cell further comprises:

a second-layer metal channel for ground, coupled to the storage means;

a second-layer metal channel for power, coupled to the storage means; and

half of an extra second-layer metal channel for the system for system interconnect unrelated to the memory cells, the half of the extra second-layer metal channel being electrically shielded from the true and complement bit lines by the second-layer metal channels for power and for ground.

17. The memory of claim 16 wherein the second-layer metal channels are situated above the third-layer metal channels.

18. The memory of claim 13 wherein the access transistor means comprises an n-channel MOS transistor and wherein the storage means comprises a pair of cross-coupled inverters.

19. The memory of claim 18 wherein the pair of cross-coupled inverters each comprise a n-channel MOS transistor and a p-channel MOS transistor having their gates coupled together and having their drains coupled together.

20. The memory of claim 19 wherein the access transistor means have the width direction of their gates in substantially the same direction as the columns and bit lines, and wherein the word lines are substantially perpendicular to the direction of the gates of the access transistor means.