Power control and delivery in plasma processing equipment

• US 5,556,549 A
• Filed: 05/02/1994
• Issued: 09/17/1996
• Est. Priority Date: 05/02/1994
• Status: Expired due to Term

• Current Assignee: LSI Corporation (Broadcom, Inc.)
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Bose, Frank A., Patrick, Roger
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/236,444
• Time in Patent Office: 869 Days
• Field of Search: 216/59, 216/61, 156/627.1, 204/192.13, 204/192.33, 204/298.03, 204/298.32, 315/111.21, 333/32, 333/17.3, 118/723 R, 118/723 E, 118/723 ER, 118/723 I, 118/723 IR, 118/712, 427/8, 427/10, 427/569
• US Class Current: 216/61
• CPC Class Codes: H01J 2237/332 Coating
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01J 37/3299 Feedback systems
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

The present invention relates to a system and method for control and delivery of radio frequency power in plasma process systems. The present invention monitors the power, voltage, current, phase, impedance, harmonic content and direct current bias of the radio frequency energy being delivered to the plasma chamber. In addition, the plasma mode of operation may be controlled by creating either a capacitively or inductively biased radio frequency source impedance. A radio frequency circulator prevents reflected power from the plasma chamber electrode to damage the power source and it further dissipates the reflected power in a termination resistor. The termination resistor connected to the circulator also effectively terminates harmonic energy caused by the plasma non-linearities. Multiple plasma chamber electrodes and radio frequency power sources may be similarly controlled.

Claims

1. A method for measuring and controlling process parameters in a plasma processing system, said method comprising the steps of:

monitoring power, voltage, current, phase angle between the voltage and current, direct current bias, harmonic content and impedance at a plasma chamber electrode; and

controlling the output of a radio frequency power source so as to maintain desired values for the power, voltage, current, phase angle between the voltage and current, direct current bias, harmonic content and impedance at the plasma chamber electrode.

2. The method of claim 1, further comprising the step of controlling a plasma mode.

3. The method of claim 1, further comprising the step of controlling the desired values of the voltage and current at the plasma chamber electrode.

4. A plasma processing system including a radio frequency power source and plasma chamber having a radio frequency electrode, said system comprising:

a radio frequency circulator having first, second and third ports, said circulator first port adapted for connection to the radio frequency power source;

a radio frequency power sensor having a radio frequency input connected to said circulator second port and having a radio frequency output adapted for connection to the plasma chamber electrode, said power sensor having a signal output representative of the radio frequency power passing therethrough;

a termination resistor connected to said circulator third port, said resistor dissipating reflected power and harmonics from the plasma chamber electrode; and

a power controller connected to said sensor signal output, wherein said power controller is adapted to control the radio frequency power source so as to maintain a desired radio frequency power at the plasma chamber electrode.

5. The plasma processing system of claim 4, further comprising a fixed matching network between the second port of said circulator and the radio frequency input of said power sensor.

6. A plasma processing system including a radio frequency power source and plasma chamber having a radio frequency electrode, said system comprising:

an adjustable matching and parameter selection network having an input and an output, said network input adapted for connection to the radio frequency power source;

a radio frequency parameter sensor having a radio frequency input connected to the output of said network and having a radio frequency output adapted for connection to the plasma chamber electrode, said parameter sensor having a plurality of signal outputs representative of the radio frequency power passing therethrough, the plasma chamber electrode voltage, current, phase angle between the voltage and current, direct current bias, harmonic content and impedance; and

a controller connected to said sensor signal outputs, wherein said controller is adapted to control the radio frequency power source so as to maintain a desired radio frequency power at the plasma chamber electrode, set said network to a pre-established impedance match between the plasma chamber and power source, control the current and voltage parameters at the plasma chamber electrode, and prevent unwanted process and matching conditions.

7. The plasma processing system of claim 6, further comprising:

a radio frequency circulator connected between the radio frequency power source and said network, said circulator having first, second and third ports, wherein the first port is adapted for connection to the radio frequency power source and the second port is connected to the input of said network; and

a termination resistor connected to said circulator third port, said resistor dissipating reflected power and harmonics from the plasma chamber electrode.

8. The plasma processing system of claim 6, wherein said controller is a programmable computer system.

9. The plasma processing system of claim 6, wherein said controller controls the plasma mode.

10. A plasma processing system including a plurality of radio frequency power sources and plasma chamber having a plurality of radio frequency electrodes, said system comprising:

a plurality of radio frequency circulators each having first, second and third ports, each first port of

said plurality of circulators adapted for connection to a respective radio frequency power source;

a plurality of radio frequency power sensors connected between each second port of said plurality of circulators and each of the plurality of radio frequency electrodes, each of said plurality of power sensors having a signal output representative of the radio frequency power passing therethrough;

a plurality of termination resistors connected to each third port of said plurality of circulators, said termination resistors dissipating power reflected from the respective plasma chamber electrode; and

a power controller connected to said plurality of sensor signal outputs, wherein said power controller is adapted to control the plurality of radio frequency power sources so as to maintain a desired process parameter at the plasma chamber electrode.

11. A plasma processing system including a radio frequency power source and plasma chamber having a radio frequency electrode, said system comprising:

first, second and third radio frequency parameter sensors each having a plurality of signal outputs representative of the radio frequency power passing therethrough, voltage, current, phase angle between the voltage and current, impedance, harmonic content and direct current bias;

a first adjustable matching network for adjusting the impedance to the radio frequency power source;

a second adjustable parameter network for controlling the plasma chamber E-field and H-field modes;

said first sensor connected between the radio frequency power source and said first matching network;

said second sensor connected between said first matching network and said second parameter network;

said third sensor connected between said second parameter network and the plasma chamber electrode; and

a controller connected to said first, second and third sensor signal outputs, wherein said controller is adapted to control the radio frequency power source so as to maintain a desired radio frequency power at the plasma chamber electrode, set said first and second networks to pre-established impedance matches between the plasma chamber and power source, control the current and voltage parameters at the plasma chamber electrode, and prevent unwanted process and matching conditions.

12. A plasma processing system of claim 11, wherein said controller is a computer system having a software program that calculates the match conditions of said first and second networks thereby controlling the desired process parameters of the plasma chamber.

13. A plasma processing system of claim 11, further comprising:

first and second circulators, and first and second termination resistors, said first and second termination resistors are connected to said first and second circulators, respectively;

said first circulator is connected between said first sensor and said first matching network; and

said second circulator is connected between said second sensor and said second parameter network.