Enhanced electron beam addressed storage target
First Claim
1. A row addressed field emitter array electronic charge storage target device comprising:
- a vacuum environment,base electrode means,a plurality of non overlapping row electrodes generally extending along a first direction,each said row electrode overlaps said base electrode means,row decoder means to apply a current control voltage between a select one of said row electrodes and said base electrode means,a respective electron emitting means operatively associated with each said row electrode and said base electrode means for emitting in said vacuum environment a plurality of electrons dependent upon said current control voltage applied between the row electrode and said base electrode means by a field emission phenomena,target means comprising;
a substrate,a plurality of reflective conductor means arranged into a matrix of p rows and q columns,support means to separate each said reflective conductor means from said substrate,said reflective conductor means in each column q are electrically connected,electron collector means,potential control means to apply between each said column q of electrically connected reflective conductor means and said collector means a respective potential difference,control means to synchronize application of said respective potential differences with application of said current control voltage between each one of said row electrodes and said base electrode means,acceleration means to enable said electrons emitted from any one of said respective emitting means to be accelerated toward said target means,focusing means to cause said electrons accelerated by said acceleration means to strike said target means at a respective emitting means image,equilibrium writing means enabling said respective potential difference applied between any one of said columns q of electrically connected reflective conductor means and said collector means to influence an electronic charge quantity accumulated by a respective pixel element formed where at least one of said reflective conductor means in the column q overlaps said emitting means image of where said focusing means has caused said accelerated electrons to strike said target means,each column q of electrically connected reflective conductor means overlaps each said respective emitting means image enabling said electronic charge quantity accumulated by said pixel elements formed with each said emitting means image to be collectively accumulated during a respective line period duration thereby providing compensation for variations in the number of said electrons striking said target means at each said emitting means image,said electronic charge quantity accumulated by each said pixel element influences separation between said substrate and said reflective conductor means forming said pixel element.
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Abstract
A electron beam row at a time addressed storage target includes substrate with a plurality of column electrodes affixed to the substrate by a suitable means. Adjacent column electrodes are displaced by a first period.
The target includes a grid for collecting secondary electrons generated by bombarding the secondary electron emission means affixed to the substrate with a plurality of electron beams. Each beam strikes the target at a beam landing area. The beam landing areas of adjacent electron beams are displaced by the first period.
The beam landing areas are positioned so each beam landing area is overlapped by a respective column electrode. A respective potential difference is applied between each electrode and the grid. Charge acquired by the target at each beam landing area is dependent upon the respective potential difference applied between the electrode which overlaps the beam landing area and the grid. Charge transfer is an equilibrium process involving secondary emissions. A scan means is provided to control the position of the beam landing areas perpendicular to the first period thereby enabling the target to be row addressed. Applications of storage targets could include spatial light modulation. A suitable reflection means is provided to reflect a wavefront incident upon the target. This allows the electron beams and the wavefront to be incident on opposing surfaces of the substrate.
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Citations
16 Claims
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1. A row addressed field emitter array electronic charge storage target device comprising:
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a vacuum environment, base electrode means, a plurality of non overlapping row electrodes generally extending along a first direction, each said row electrode overlaps said base electrode means, row decoder means to apply a current control voltage between a select one of said row electrodes and said base electrode means, a respective electron emitting means operatively associated with each said row electrode and said base electrode means for emitting in said vacuum environment a plurality of electrons dependent upon said current control voltage applied between the row electrode and said base electrode means by a field emission phenomena, target means comprising; a substrate, a plurality of reflective conductor means arranged into a matrix of p rows and q columns, support means to separate each said reflective conductor means from said substrate, said reflective conductor means in each column q are electrically connected, electron collector means, potential control means to apply between each said column q of electrically connected reflective conductor means and said collector means a respective potential difference, control means to synchronize application of said respective potential differences with application of said current control voltage between each one of said row electrodes and said base electrode means, acceleration means to enable said electrons emitted from any one of said respective emitting means to be accelerated toward said target means, focusing means to cause said electrons accelerated by said acceleration means to strike said target means at a respective emitting means image, equilibrium writing means enabling said respective potential difference applied between any one of said columns q of electrically connected reflective conductor means and said collector means to influence an electronic charge quantity accumulated by a respective pixel element formed where at least one of said reflective conductor means in the column q overlaps said emitting means image of where said focusing means has caused said accelerated electrons to strike said target means, each column q of electrically connected reflective conductor means overlaps each said respective emitting means image enabling said electronic charge quantity accumulated by said pixel elements formed with each said emitting means image to be collectively accumulated during a respective line period duration thereby providing compensation for variations in the number of said electrons striking said target means at each said emitting means image, said electronic charge quantity accumulated by each said pixel element influences separation between said substrate and said reflective conductor means forming said pixel element. - View Dependent Claims (2)
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3. A row addressed field emitter array charge storage target device comprising:
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a vacuum environment, base electrode means, a plurality of non-overlapping row electrodes generally extending along a first direction, each said row electrode overlaps said base electrode means, row decoder means to apply between a select one of said row electrodes and said base electrode means a current control voltage, a respective electron emitting means operatively associated with each said row electrode and said base electrode means to emit in said vacuum environment a plurality of electrons dependent upon said current control voltage applied between the row electrode and said base electrode means by a field emissions phenomena, target means comprising; a substrate, a plurality of non-overlapping column conductors generally extending along a second direction, each said column conductor is affixed to said substrate, electron collector means, potential control means to apply between each said column conductor and said collector means a respective potential difference, control means to synchronize application of said current control voltage between each one of said row electrodes and said base electrode means with application of said respective potential differences between said column conductors and said electron collector means, acceleration means to enable said electrons emitted from any one of said respective emitting means to be accelerated toward said target means, focusing means to cause said electrons accelerated by said acceleration means to strike said target means at a respective emitting means image, equilibrium writing means enabling said respective potential difference applied between any one of saidcolumn conductors and said collector means to influence an electronic charge quantity which is accumulated by a respective pixel element formed where said column conductor overlaps said emitting means image of where said focusing means has caused said accelerated electrons to strike said target means, said column conductors overlap each said respective emitting means image enabling said electronic charge quantity accumulated by said pixel elements formed with each said emitting means image to be collectively accumulated during a respective line period duration thereby enabling compensation for variations in the number of said electrons striking said target means at each said emitting means image. - View Dependent Claims (4, 5, 6, 7, 8, 9)
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10. An enhanced electron beam addressed storage target device comprising:
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a vacuum environment, target means comprising; a substrate electron collector means, a plurality of non-overlapping column conductors generally extending along a first direction, each said column conductor is affixed to said substrate, potential control means to apply between each said column conductor and said collector means a respective potential difference, electron source means enabling said target means to be bombarded at a select one of a plurality of electron beam landing areas with a plurality of electrons emitted from a respective output region of a microchannel plate amplifying means, each said beam landing area generally extending along a second target direction, control means for synchronizing application of said respective potential differences with bombardment of each said beam landing area with said electrons emitted from said respective output region, equilibrium writing means enabling said respective potential difference applied between any one of said column conductors and said collector means to influence an electronic charge quantity which is accumulated by a respective pixel element formed where said column conductor overlaps the selected one of said plurality of beam landing areas which is being bombarded with electrons emitted from said respective output region, said charge quantity accumulated by said pixel elements formed with each said beam landing area is accumulated during bombardment of the beam landing area forming the pixel elements with said plurality of electrons emitted from said respective output region, said column conductors overlap each said beam landing area enabling said charged quantity accumulated by said pixel elements formed with each said beam landing area to be collectively accumulated during a respective line period duration thereby providing compensation for variations in the number of said electrons striking said target means at each said beam landing area. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification