Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated

• US 5,559,042 A
• Filed: 07/12/1994
• Issued: 09/24/1996
• Est. Priority Date: 03/27/1991
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takemura, Yasuhiko, Yamazaki, Shunpei
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US08/273,923
• Time in Patent Office: 805 Days
• Field of Search: 437/21, 437/101, 437/247, 437/164, 437/40 TFT, 437/41 TFT, 117/7
• US Class Current: 438/164
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/0922 Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: Y10S 438/967 Semiconductor on specified insulator

Abstract

A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.

Claims

1. A method of forming a semiconductor device comprising the steps of:

forming on a substrate an insulating film having the property of contracting in thermal treatment;

forming a semiconductor film on said insulating film;

forming a groove in said insulating film and said semiconductor film to form an island portion thereof;

contracting said insulating film by subjecting said insulating film to thermal treatment;

providing a gate oxide layer on a surface of said semiconductor film; and

providing a gate electrode on said gate oxide layer.

2. The method of claim 1 wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.

3. The method of claim 1 wherein said substrate comprises a material selected from the group consisting of insulator and semiconductor.

4. The method of claim 1 wherein the formation of said insulating film and said semiconductor film is carried out at a temperature at which said insulating film does not contract.

5. The method of claim 4 wherein said thermal treatment is carried out at a temperature at which said insulating film contracts.

6. The method of claim 1 wherein said insulating film is contracted at a ratio of 30 to 500 ppm during said contracting step.

7. A method for forming a semiconductor device comprising the steps of:

forming on a substrate an insulating film having the property of contracting in thermal treatment;

forming a groove in said insulating film to form an island portion thereof;

forming a semiconductor film on said insulating film;

contracting said insulating film by subjecting said insulating film to thermal treatment;

providing a gate oxide layer on a surface of said semiconductor film; and

providing a gate electrode on said gate oxide layer.

8. The method of claim 7 wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.

9. The method of claim 7 wherein said substrate comprises a material selected from the group consisting of insulator and semiconductor.

10. The method of claim 7 wherein said insulating film has a thickness of 50 to 1000 nm.

11. A method for manufacturing a semiconductor device comprising the steps of:

forming a glass layer on a surface;

forming a non-single crystalline semiconductor layer on said glass layer; and

heating said non-single crystalline semiconductor layer and said glass layer in order to contract said glass layer;

providing a gate oxide layer on a surface of said semiconductor layer; and

providing a gate electrode on said gate oxide layer.

12. The method of claim 11 wherein said glass layer comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.

13. The method of claim 11 wherein said non-single crystalline semiconductor layer is crystallized at the same time during said heating.

14. A method for manufacturing a semiconductor device comprising the steps of:

forming a glass layer on a surface, said glass layer containing hydrogen at 10-30 atomic % therein;

forming a non-single crystalline semiconductor layer on said glass layer;

heating said glass layer and said semiconductor layer in order to contract said glass layer;

providing a gate oxide layer on a surface of said semiconductor layer; and

providing a gate electrode on said gate oxide layer.

15. The method of claim 14 wherein the formation of said semiconductor layer is carried out at such a temperature that said glass layer does not contract.