Method for placing semiconductive plates on a support

• US 5,559,043 A
• Filed: 01/25/1995
• Issued: 09/24/1996
• Est. Priority Date: 01/26/1994
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: Bruel, Michel
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): MULPURI, SAVITRI
• Application Number:
  US08/378,455
• Time in Patent Office: 608 Days
• Field of Search: 437/24, 437/26, 437/966, 437/173, 437/937, 437/974, 148/DIG. 12
• US Class Current: 438/407
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate
• CPC Class Codes: Y10T 156/1052 with cutting, punching, tearing or severing
• CPC Class Codes: Y10T 225/12 With preliminary weakening

Abstract

Method for laying at least one semiconductive plate with a specific thickness and size on a support, wherein it includes the following stages: the bombardment by ions of one face of a semiconductive substrate so as to create there a film of gaseous microbubbles along a splitting plane of the substrate, the ion implantation energy being provided so as to obtain the film of gaseous microbubbles at a depth corresponding to the specific thickness of the semiconductive plate, the ions being selected from rare gas or hydrogen gas ions, the rendering integral on the face of the substrate of the support, illuminating by a laser beam of the zone of the face of the substrate corresponding to the plate to be placed through the support, the luminous energy transmitted by the beam through the support needing to be sufficient so as to induce in the corresponding region of the film of gaseous microbubbles a temperature sufficient to cause splitting of the plate of the support and provoke increasing of the adherence of the plate on the support, separating the substrate with respect to the support, this separation separating the plate from the substrate and retaining it on the support.

Claims

1. Method for placing at least one semiconductive plate having a specific size and thickness on a support and including the following stages:

the bombardment by ions of one face of a semiconductive substrate so as to create there a film of gaseous microbubbles along a splitting plane of the substrate, the ion implantation energy being provided so as to obtain the film of gaseous microbubbles at a depth corresponding to the specific thickness of the semiconductive plate, the ions being selected from rare gas or hydrogen gas ions,

then rendering integral structure by applying a support on said face of the substrate,

illuminating by a laser beam of a zone of the face of the substrate corresponding to the plate to be placed through the support, the luminous energy transmitted by the beam through said support needing to be sufficient so as to induce in the corresponding region of the film of gaseous microbubbles a temperature sufficient to cause splitting of the plate of the support and provoke increasing the adherence of the plate to the support,

thereby separating the substrate with respect to the support, this separation separating the plate from the substrate and retaining it on the support.

2. Method according to claim 1 and comprising, prior to or subsequent to the bombardment stage, a stage for etching said face of the substrate by trenches delimiting on the face of the substrate a surface corresponding to the size of said plate.

3. Method according to claim 2, wherein the depth of the trenches is greater than the depth of the film of gaseous microbubbles.

4. Method according to claim 1, wherein, as the substrate is required to provide several plates on the support, the illumination of the zones of the face of the substrate corresponding to the plates to be placed is obtained by scanning the substrate with the luminous beam.

5. Method according to claim 1, wherein, as the substrate is needed to provide several plates on the support, the illumination of the zones of the face of the substrate corresponding to the plates to be placed is effected collectively by means of illumination through a mask pierced with openings corresponding to the zones to be illuminated.

6. Method according to claim 1, wherein the luminous beam is a yag beam.

7. Method according to claim 1, wherein the substrate is made of monocrystalline silicon and bombardment is carried out by hydrogen ions at a temperature of the substrate of between 150°

C. and 350°

C., the luminous beam raising the temperature of the zones of the illuminated substrate to more than 600°

C.

8. Method according to claim 1, comprising placing a plurality of semiconductive plates for forming transistors for controlling the pixels of an active matrix flat screen therein.

9. Method according to claim 1, comprising placing a plurality of semiconductive plates for forming image sensors therein.

10. Method according to claim 1, comprising placing a plurality of semiconductive plates for forming active matrix printing heads therein.