Opto-electro-mechanical device or filter, process for making, and sensors made therefrom

• US 5,559,358 A
• Filed: 05/23/1994
• Issued: 09/24/1996
• Est. Priority Date: 05/25/1993
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Burns, David W., Guckel, Henry, Zook, James D.
• Primary Examiner(s): Crane, Sara W.
• Application Number:
  US08/247,911
• Time in Patent Office: 855 Days
• Field of Search: 73/579, 73/862.59, 73/778, 257/431, 257/434, 257/436, 257/415, 257/417
• US Class Current: 257/431
• CPC Class Codes: G01J 5/44 using change of resonant frequency, e.g. of piezoelectric crystals
• CPC Class Codes: G01L 9/002 Optical excitation or measuring
• CPC Class Codes: G01P 15/093 by photoelectric pick-up
• CPC Class Codes: G01P 15/097 by vibratory elements
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: G02B 26/0833 the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD G02B26/0825 takes precedence; micromechanical devices in general B81B
• CPC Class Codes: H01L 31/00 Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K30/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L27/00

Abstract

The present invention relates to microstructures fabricated from semiconductor material and having a flexible member which is excited into various modes of resonance and in which such resonance is read optically. By coupling the microstructure to a surface or material of interest, a drive means will excite the flexible member into a characteristic resonance which when read optically gives indication of certain physical phenomena influencing the surface or material of interest. The microstructures of the present invention may be configured to self-resonate, as a so-called active device, under certain conditions. Many different physical phenomena may be quantified using the device of the present invention.

Claims

1. A resonant semiconductor microstructure, comprising:

a semiconductor base having a cavity on one side;

a vibratory flexible member formed of a semiconductor material and having at least one portion connected to the semiconductor base proximate the cavity; and

forming an integrated optical interference structure in cooperation with at least one other fixed surface of the semiconductor base, so that an amount of incident light energy traverses the vibratory flexible member and is then reflected from the at least one other fixed surface of the semiconductor base thereby creating an optical interference pattern consistent with the vibration of the flexible member.

2. The resonant semiconductor microstructure of claim 1 further comprising a piezoelectric drive means coupled to the flexible member for driving the flexible member at a resonant frequency of said flexible member.

3. The resonant semiconductor microstructure of claim 1 further comprising a photovoltaic drive means formed proximate the flexible member so that incident radiant energy causes the flexible member to resonate at a natural frequency of the flexible member.

4. The resonant semiconductor microstructure of claim 3 wherein the flexible member is formed of fine grain polysilicon.

5. The resonant semiconductor microstructure of claim 4 wherein the photovoltaic drive means comprises a p-n junction formed by doping the semiconductor base and wherein a portion of the p-n junction lies in a surface of the cavity directly below the flexible member.

6. The microstructure of claim 1 further comprising:

a light emitting means optically coupled to the microstructure for producing and directing the incident radiant energy to the flexible member; and

,

a photodetector disposed proximate the microstructure that receives radiant energy from the microstructure.

7. The microstructure of claim 3 further comprising:

a covering structure formed of a light-admitting semiconductor material and forming a sealed space that encapsulates all exposed sides of the flexible member in cooperation with the cavity on one side of the semiconductor base.

8. The resonant semiconductor microstructure of claim 7 wherein the cavity is evacuated.

9. The microstructure of claim 7 wherein the covering structure is silicon nitride.

10. The resonant semiconductor microstructure of claim 3 wherein the photovoltaic drive means and the flexible member form an integrated monolithic structure.

11. The resonant semiconductor microstructure of claim 3 wherein:

the flexible member is formed of polysilicon,

the semiconductor base comprises single crystal silicon, and

the photovoltaic drive means is formed in a portion of the cavity in the semiconductor base.

12. The resonant semiconductor microstructure of claim 1 wherein the flexible member comprises fine grain polysilicon.

13. The resonant semiconductor microstructure of claim 1 wherein:

the flexible member comprises a select one of;

polycrystalline silicon, GaN, GaAIAs, AIGaN, SiC, diamond, or any suitable III-V or II-VI material; and

the semiconductor material comprises a select one of;

single crystal silicon, GaN, GaAIAs, AIGaN, SiC, diamond, or any suitable III-V or II-VI material.

14. The resonant semiconductor microstructure of claim 3 wherein the photovoltaic drive means comprises a p-n junction.

15. The microstructure of claim 1 wherein the flexible member is formed as a thinned cantilevered extension of the substrate, and has a coating layer on one side of a specific material so that flexure of the cantilevered extension and consequent shifts in the resonant frequency of the cantilevered extension occurs when the cantilevered extension communicates with a material corresponding to a preselected environmental quality of interest.

16. The microstructure of claim 15 wherein the specific material comprises a select one of the following:

a humidity sensitive material, a magnetic material, a piezoelectric material, a chemically sensitive/differentiating material, or a thermally sensitive material having a different thermal coefficient of expansion, and the select environmental quality of interest respectively comprises;

humidity, magnetic filed, electric field, chemical species, and temperature.

17. The microstructure of claim 16 further comprising a compensating means for equalizing the effects of a difference in a characteristic thermal response between the cantilevered extension and the specific material, and wherein the compensating means comprises a first coating layer over a first portion of the cantilevered extension with a second coating layer of a material of compensating thermal characteristic covering a second portion of the cantilevered extension.

18. The microstructure of claim 3 further comprising a plurality of flexible members disposed on the semiconductor base which has a like plurality of cavities therein.

19. The resonant semiconductor microstructure of claim 3 wherein:

the photovoltaic drive means comprises a select one of;

a metal-semiconductor interface, a partially filled surface state, or a completely filled surface state.

20. A microstructure of claim 1 wherein the microstructure is couples to a surface which conducts acoustic waves having frequency components comparable to a resonant frequency of said flexible member associated with the microstructure.

21. The structure of claim 1 further comprising a plurality of flexible members formed into the semiconductor base and wherein each said flexible member resonates at a different frequency than each of the other plurality of flexible members formed in the semiconductor base.

22. The structure of claim 1 wherein the flexible member is spaced from the semiconductor base and driven by radiant energy modulated at a resonant frequency of the flexible member with a preselected modulation index, so that an optical signal different than the preselected modulation index results.

23. A microstructure of claim 3, wherein a microstructure is fluidly coupled to a gaseous substance, so that the vibration of the flexible member varies when the gaseous substance fluidly interacts with the flexible member.

24. The microstructure of claim 7, further comprising an aperture in the covering structure so that the flexible member fluidly couples to a gaseous substance that changes a pre-existing resonant frequency of the flexible member.

25. The microstructure of claim 24, further comprising a second covering structure forming a hermetic seal around the microstructure so that a resonant frequency of the flexible member changes if the hermetic seal is broken.

26. The resonant semiconductor microstructure of claim 3 wherein the incident radiant energy comprises a select one of the following:

continuous wave, unmodulated light;

modulated light which is modulated at a resonant frequency of the flexible member;

or

modulated light, wherein the modulation frequency of the light is swept through a range encompassing a resonant frequency of the flexible member, or

infrequent pulses of light, wherein said pulses occur at a rate substantially lower than the resonant frequency of the flexible member of the microstructure.

27. The microstructure of claim 7 further comprising at least one optical fiber carrying the incident radiant energy.

28. The microstructure of claim 27 further comprising at least one integrated optical waveguide coupling the at least one optical fiber to the covering structure.

29. The microstructure of claim 27 wherein the resonant microstructure is disposed on a deformable diaphragm oriented to respond to fluid pressure.

31. The microstructure of claim 27 wherein the at least one optical fiber comprises a select one of:

a combination multi-mode/single-mode optical fiber, a combination glass/resin optical fiber, or a multi-mode-only optical fiber.

33. A microstructure of claim 1, wherein at least two opposing end portions of the flexible member are fixed to the semiconductor substrate and thereby adapted to respond to an imposed magnetic field, and wherein:

the displacement of the flexible member results from a combination of photo-induced electrical current flowing through the flexible member and the presence of a dc magnetic field.

34. The microstructure of claim 1 wherein the flexible member is attached to the base at more than one place and is free to vibrate, and wherein the resulting frequency of vibration of the flexible member is determined in part by the direction and magnitude of stress applied to the flexible member through the locations of attachment to the base.

35. The structure of claim 6, wherein the light emitting means comprises a diode.

36. The microstructure of claim 1, further comprising at least one electrode means for changing the amplitude or frequency of the vibrations of the flexible member in response to the application of electrical potential to the electrode.

37. A microstructure of claim 36 adapted to respond to the presence of an electrolyte material disposed proximate or within a surface bearing said microstructure, and further comprising:

at least two electrodes, each fabricated from a dissimilar material, wherein a first electrode electrically coupled to the photovoltaic structure and electrically isolated from the semiconductor substrate and a second electrode electrically isolated from the first electrode and disposed to contact a portion of the electrolyte material so that resonance of the flexible beam changes or stops when either the first or the second electrode contacts a portion of the electrolyte material.

38. A strain sensor, comprising the microstructure of claim 27 mechanically coupled to a surface to be monitored for strain, and wherein the microstructure is coupled so that the flexible member is disposed longitudinally to the strain in the surface to be monitored.

39. The strain sensor of claim 38, wherein the flexible member spans the cavity and connects at opposing sides of said cavity.

40. An accelerometer, comprising the microstructure of claim 7 physically coupled to a flexible but non-resonant flexure member which is further physically coupled to a proof-mass member.

41. The structure of claim 1 wherein the microstructure is disposed on a lateral surface of a rotating shaft.

42. The sensor of claim 41 further comprising an optical fiber fixed to a stationary member proximate the rotating shaft to provide an output related to the torque present in the rotating shaft.

44. The microstructure of claim 4 further comprising an anti-reflection coating over at least a portion of the covering structure.

45. The microstructure of claim 3, wherein the flexible member is formed generally in a rectangular shape and wherein a center portion of the flexible member has an enlarged center region.

46. The microstructure of claim 3, wherein the flexible member is formed in a rectangular shape and the flexible member has at least one lateral attachment means.

30. The microstructure of 27 further comprising a light focusing means coupled to the optical fiber for concentrating the incident radiant energy on the flexible member.

32. The microstructure of claim 30, further comprising a collimating lens optically coupled to the optical fiber so that the incident radiant energy focuses on the photovoltaic drive means.

43. A strain sensor array of a plurality of resonant semiconductor microstructures, comprising:

a semiconductor base having a plurality of cavities therein;

a plurality of vibratory flexible members corresponding to the cavities, and formed integrally of a semiconductor material and having at least one portion connected to the semiconductor base proximate a cavity; and

forming an optical interference structure in cooperation with at least one other fixed surface of the semiconductor base, so that an amount of incident light energy traverses the vibratory flexible member and is then reflected from the at least one other fixed surface of the semiconductor base thereby creating an optical interference pattern consistent with the vibration of the flexible member; and

wherein at least two of the plurality of flexible members are oriented orthogonal from each other on the semiconductor base to optimize sensitivity to two-dimensional strain.

47. A microstructure that vibrates in response to incident light directed at the microstructure, comprising:

a semiconductor base having a cavity in one side;

a first flexible beam member that transmits a majority of said incident light directed thereon and formed integrally of a semiconductor material and having a distal end connected to the semiconductor base proximate the cavity and a proximal end connected to the semiconductor base so that the flexible beam member spans the cavity; and

,

a first photovoltaic drive structure disposed so that a portion lies within the cavity.

48. The microstructure of claim 47 further comprising a second flexible beam member similar in dimension to the first flexible beam member, coupled to the first flexible beam member and spaced from the first flexible beam member by a recess so that the distal ends of both the first and second flexible beam members lie proximate to the other and the proximal ends of the first flexible beam member and the second flexible beam member lie proximate to each other.

49. The microstructure of claim 48, wherein the first and second flexible beam members are formed of single crystal semiconductor material and further comprising a second photovoltaic drive structure disposed in a select one of the following locations:

the semiconductor base, the first flexible beam member, or the second flexible beam member.