Microwave integrated circuit passive element structure and method for reducing signal propagation losses

• US 5,559,359 A
• Filed: 01/03/1995
• Issued: 09/24/1996
• Est. Priority Date: 07/29/1994
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Adolfo C. Reyes
• Inventors: Reyes, Adolfo C.
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US08/367,664
• Time in Patent Office: 630 Days
• Field of Search: 257/655, 257/622, 257/614, 257/523, 257/453, 257/277, 257/482, 257/532
• US Class Current: 257/453
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

A passive element structure and method for a microwave integrated circuit reduces signal propagation losses. In one approach, a passive element (10) has an insulating layer (12) overlying a silicon substrate (14). A metal layer (16) comprising a signal line (18) and a groundplane (20) is disposed overlying the insulating layer (12), and at least a portion of the metal layer (16) contacts the substrate (14) through at least one opening (22, 24) in the insulating layer (12). The silicon substrate (14) has a resistivity greater than 2,000 ohm-cm, and the passive element (10) preferably carries signals having frequencies greater than 500 MHz. Signal losses in the passive element (10) are minimized because the charge density at the surface (15) of the substrate (14) underlying the metal layer (16) is significantly reduced. In one example, the passive element (10) is a coplanar waveguide transmission line.

Claims

1. A microwave integrated circuit formed on a silicon substrate and having a passive element for carrying a signal, said passive element comprising:

an insulating layer overlying said substrate and having a first opening; and

a metal layer overlying said insulating layer, wherein at least a portion of said metal layer contacts a depletion region in said substrate through said first opening.

2. The circuit of claim 1 wherein said signal has a frequency greater than about 500 MHz.

3. The circuit of claim 1 wherein said signal has a frequency greater than about 1 GHz.

4. The circuit of claim 1 wherein said substrate has a resistivity greater than about 2,000 ohm-cm.

5. The circuit of claim 1 wherein said substrate has a resistivity greater than about 3,000 ohm-cm.

6. The circuit of claim 1 wherein said passive element is a transmission line.

7. The circuit of claim 1 wherein said passive element is a coplanar waveguide transmission line.

8. The circuit of claim 1 wherein:

said metal layer comprises a signal line and a groundplane;

at least a portion of said signal line contacts said substrate through said first opening; and

at least a portion of said groundplane contacts said substrate through a second opening in said insulating layer.

9. The circuit of claim 1 wherein said passive element is an inductor, a capacitor, a transmission line, a resistor, or a filter.

10. A microwave integrated circuit formed on a silicon substrate having a resistivity greater than 2,000 ohm-cm and including a passive element for carrying a signal, said signal having a frequency greater than 500 MHz, said passive element comprising:

an insulating layer overlying said substrate and having an opening; and

a metal layer overlying said insulating layer, wherein at least a portion of said metal layer contacts a depletion region in said substrate through said opening.

11. The circuit of claim 10 wherein said passive element is a waveguide transmission line.

12. A microwave integrated circuit formed on a silicon substrate and having a passive element for carrying a signal, said passive element comprising:

a first metal layer formed on a first depletion region in said substrate;

an insulating layer overlying said first metal layer and having an opening; and

a second metal layer overlying said first metal layer, wherein at least a portion of said second metal layer contacts a second depletion region in said substrate through said opening.

13. The circuit of claim 12 wherein:

said substrate has a resistivity greater than 2,000 ohm-cm; and

said signal has a frequency greater than 500 MHz.

14. In a microwave integrated circuit formed on a silicon substrate, a metal-insulator-metal capacitor comprising:

a first metal layer disposed on a depletion region in said substrate;

an insulating layer disposed on said first metal layer; and

a second metal layer disposed on said insulating layer.

15. The capacitor of claim.14 wherein a signal applied to said capacitor has a frequency greater than 500 MHz.

16. The capacitor of claim 15 wherein said substrate has a resistivity greater than 2,000 ohm-cm.

17. A method for reducing propagation losses of a signal carried in a microwave integrated circuit formed on a substrate having a surface, wherein said signal has a frequency greater than 500 MHz, comprising the steps of:

providing a passive element for carrying said signal, said passive element comprising an insulating layer disposed on said surface of said substrate, and a metal layer disposed on said insulating layer; and

applying a voltage across said metal layer and said surface of said substrate having a magnitude substantially equal to a flat band voltage corresponding to said substrate, said insulating layer, and said metal layer.

18. The method of claim 17 wherein said step of applying a voltage includes selecting said magnitude so that a first resistivity of said substrate at said surface is substantially equal to a second bulk resistivity of said substrate.

19. The method of claim 17 wherein said step of applying a voltage includes selecting said magnitude so that a valence band and a conduction band of said substrate are substantially flat at said surface of said substrate.

20. The method of claim 17 wherein said substrate is silicon.

21. The method of claim 20 wherein said substrate has a resistivity greater than 2,000 ohm-cm.

22. The method of claim 20 wherein said passive element is an inductor, a capacitor, a transmission line, a resistor, or a filter.

23. The method of claim 17 wherein said signal has a frequency greater than 1 GHz.

24. The method of claim 17 wherein said metal layer comprises a signal line and a groundplane, and said voltage is applied to said signal line and said groundplane.

25. A method for reducing propagation losses of a signal carried in a microwave integrated circuit formed on a silicon substrate having a resistivity of greater than 2,000 ohm-cm and having a surface, wherein said signal has a frequency greater than 500 MHz, comprising the steps of:

providing a passive element for carrying said signal, said passive element comprising an insulating layer disposed on said surface of said substrate, and a metal layer disposed on said insulating layer; and

applying a voltage across said insulating layer and said surface of said substrate having a magnitude substantially equal to a flat band voltage corresponding to said substrate, said insulating layer, and said metal layer.