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Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation

  • US 5,559,368 A
  • Filed: 08/30/1994
  • Issued: 09/24/1996
  • Est. Priority Date: 08/30/1994
  • Status: Expired due to Fees
First Claim
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1. A dynamic threshold insulated gate field effect device comprisinga first transistor formed in a first semiconductor body region and having a source, a drain, a channel region between said source and said drain, and a gate contact overlying said channel region,a second transistor formed in a second semiconductor body region and having a source, a drain, a channel region between said source and said drain, and a gate contact overlying said channel region,means for interconnecting said drain of said second transistor to said gate of said first transistor,means for interconnecting said source of said second transistor to said first semiconductor body region,means for interconnecting said source of said first transistor to a reference potential, andmeans for biasing said gate contact of said second transistor with an appropriate gate voltage whereby said second transistor applies a forward bias to said first semiconductor body region relative to said source of said first transistor.

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