Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals

• US 5,559,389 A
• Filed: 11/24/1993
• Issued: 09/24/1996
• Est. Priority Date: 09/08/1993
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Silicon Video Corporation
• Inventors: Spindt, Christopher J., Macaulay, John M.
• Primary Examiner(s): Snow, Walter E.
• Assistant Examiner(s): Patel, Ashok
• Application Number:
  US08/158,102
• Time in Patent Office: 1,035 Days
• Field of Search: 313/310, 313/311, 313/336, 313/351, 313/355, 313/631, 315/169.4, 345/47, 345/37, 345/41, 345/60, 345/75
• US Class Current: 313/310
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01J 1/3042 microengineered, e.g. Spindt-type
• CPC Class Codes: H01J 2201/30403 characterised by the emitter shape
• CPC Class Codes: H01J 2201/30457 Diamond
• CPC Class Codes: H01J 2201/319 Circuit elements associated with the emitters by direct integration
• CPC Class Codes: H01J 3/022 with microengineered cathode, e.g. Spindt-type
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

A gated electron-emitting device contains a multiplicity of electron-emissive elements, each formed with a pedestal (98) and an overlying cone (94₁). In each electron-emissive element, the base diameter of the cone is greater than the element, the base diameter of the cone is greater than the diameter of the pedestal. With the pedestal being electrically conductive, the cone may be electrically resistive. Alternatively, each electron-emissive element can be an elongated element (30B) that reaches a maximum diameter at a point between, and spaced apart from, both ends of the element.

Claims

1. An electron-emitting structure comprising:

a lower electrically conductive region; and

a multiplicity of laterally separated electron-emissive elements contacting the lower conductive region, each electron-emissive element comprising (a) a highly resistive portion situated over the lower conductive region and (b) a corresponding electron-emissive portion situated over the highly resistive portion, the electron-emissive portion comprising material generally in the shape of a cone pointing away from the lower conductive region, the diameter of the cone at its base being greater than the maximum diameter of the underlying highly resistive portion.

2. A structure as in claim 1 further including:

an electrically insulating layer lying over the lower conductive region, a like multiplicity of dielectric open spaces extending fully through the insulating layer, at least part of each electron-emissive element situated in a corresponding one of the dielectric open spaces; and

a patterned electrically conductive gate layer lying over the insulating layer, a like multiplicity of gate openings extending fully through the gate layer, each electron-emissive element being exposed through a corresponding one of the gate openings.

3. A structure as in claim 1 wherein the electron-emissive elements longitudinally extend generally perpendicular to the lower conductive region along its upper surface.

4. A structure as in claim 1 wherein the electron-emissive elements are situated at locations substantially random relative to one another.

5. A structure as in claim 1 wherein the electron-emissive portion of each electron-emissive element comprises a generally pointed tip pointing away from the lower conductive region.

6. A structure as in claim 1 wherein the lower conductive region comprises metal.

7. A structure as in claim 1 wherein each electron-emissive element is generally in the shape of a cone pointing away from the lower conductive region.

8. A structure as in claim 1 wherein each highly resistive portion has a resistance of at least 10⁶ ohms.

9. A structure as in claim 1 wherein the highly resistive portions comprise at least one of (a) cermet and (b) polycrystalline silicon.

10. A structure as in claim 1 wherein the electron-emissive elements operate in field-emission mode.

11. An electron-emitting structure comprising:

a lower electrically conductive region; and

a multiplicity of elongated laterally separated electron-emissive elements having respective lower ends that contact the lower conductive region, each electron-emissive element reaching a maximum diameter at a point between, and spaced apart from, both ends of that electron-emissive element.

12. A structure as in claim 11 wherein each electron-emissive element is generally symmetrical about its longitudinal axis.

13. A structure as in claim 11 wherein the electron-emissive elements longitudinally extend generally perpendicular to the lower conductive region along its upper surface.

14. A structure as in claim 11 wherein the electron-emissive elements are situated at locations substantially random relative to one another.

15. A structure as in claim 11 further including:

an electrically insulating layer lying over the lower conductive region, a like multiplicity of dielectric open spaces extending fully through the insulating layer, at least part of each electron-emissive element situated in a corresponding one of the dielectric open spaces; and

a patterned electrically conductive gate layer lying over the insulating layer, a like multiplicity of gate openings extending fully through the gate layer, each electron-emissive element being exposed through a corresponding one of the gate openings.

16. A structure as in claim 11 wherein the electron-emissive elements operate in field-emission mode.

17. An electron-emitting structure comprising:

a lower electrically conductive region; and

a multiplicity of laterally separated electron-emissive elements, each comprising (a) an electrically conductive pedestal situated over the lower conductive region and (b) an electron-emissive portion situated over the pedestal, the electron-emissive portion being generally in the shape of a cone that points away from the lower conductive region, the diameter of the cone at its base being greater than the maximum diameter of the pedestal.

18. A structure as in claim 17 wherein each cone is generally centered on its pedestal.

19. A structure as in claim 17 further including:

an electrically insulating layer lying over the lower conductive region, a like multiplicity of dielectric open spaces extending fully through the insulating layer, at least part of each electron-emissive element being situated in a corresponding one of the dielectric open spaces; and

a patterned electrically conductive gate layer lying over the insulating layer, a like multiplicity of gate openings extending fully through the gate layer, each cone being exposed through a corresponding one of the gate openings.

20. A structure as in claim 19 wherein each gate opening is generally centered on its electron-emissive element.

21. A structure as in claim 19 wherein each pedestal laterally adjoins the insulating layer.

22. A structure as in claim 17 wherein the pedestals extend generally perpendicular to the lower conductive region along its upper surface.

23. A structure as in claim 17 wherein the electron-emissive elements are situated at locations substantially random relative to one another.

24. A structure as in claim 17 wherein the electron-emissive elements operate in field-emission mode.

25. An electron-emitting structure comprising:

a lower electrically conductive region which comprises (a) a highly conductive part and (b) a highly resistive part situated over the highly conductive part; and

a multiplicity of laterally separated electron-emissive elements situated on the highly resistive part above the highly conductive part, each electron-emissive element comprising (a) an electrically conductive pedestal situated over the highly resistive part and (b) an electron-emissive portion situated over the pedestal, the electron-emissive portion being generally in the shape of a cone that points away from the highly resistive part, the diameter of the cone at its base being greater than the maximum diameter of the pedestal.

26. A structure as in claim 25 further including:

an electrically insulating layer lying over the highly resistive part, a like multiplicity of dielectric open spaces extending fully through the insulating layer, at least part of each electron-emissive element situated in a corresponding one of the dielectric open spaces; and

a patterned electrically conductive gate layer lying over the insulating layer, a like multiplicity of gate openings extending through the gate layer, each electron-emissive element being exposed through a corresponding one of the gate openings.

27. A structure as in claim 25 wherein each cone is generally centered on its pedestal.

28. A structure as in claim 25 wherein the electron-emissive elements longitudinally extend generally perpendicular to the lower conductive region along its upper surface.

29. A structure as in claim 25 wherein the electron-emissive elements are situated at locations substantially random relative to one another.

30. A structure as in claim 25 wherein the highly resistive part has a resistance of at least 10⁶ ohms between each pedestal and the highly conductive part.

31. A structure as in claim 25 wherein the highly resistive part comprises at least one of (a) cermet and (b) polycrystalline silicon.

32. A structure as in claim 25 wherein the electron-emissive elements operate in field-emission mode.