Voltage regulator having improved stability

• US 5,559,424 A
• Filed: 10/20/1994
• Issued: 09/24/1996
• Est. Priority Date: 10/20/1994
• Status: Expired due to Term

• Current Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Original Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Inventors: Wrathall, Robert S., Franck, Steven J.
• Primary Examiner(s): Wong, Peter S.
• Assistant Examiner(s): Riley, Shawn
• Application Number:
  US08/326,408
• Time in Patent Office: 705 Days
• Field of Search: 323/275, 323/277, 323/278, 323/285, 323/286, 323/311, 323/313
• US Class Current: 323/277
• CPC Class Codes: G05F 3/20 using diode- transistor combinations G05F3/18 takes precedence
• CPC Class Codes: G05F 3/267 using both bipolar and field-effect technology
• CPC Class Codes: Y10S 323/907 Temperature compensation of semiconductor

Abstract

The preferred embodiment voltage regulator exhibits improved stability by offsetting changes in the output impedance of the regulator due to changes in load current. This compensation occurs virtually instantaneously with a change in load current. This enables an output capacitor to be selected primarily based upon filtering requirements rather than on frequency compensation requirements. Also in the preferred embodiment, a depletion mode pass transistor is used as the output transistor. A PMOS transistor on/off switch is connected between the source of the pass transistor and the output terminal of the regulator to effectively turn the regulator on or off without shutting down the depletion mode pass transistor. This avoids the need to form a negative supply voltage generator. An improved band gap voltage reference generator is also described which introduces a beta correction factor into the output voltage which offsets changes in beta due to process variations and other conditions. Thus, the output voltage of the reference generator is not affected by variations in the beta of transistors forming the reference generator.

Claims

1. A linear voltage regulator comprising:

an MOS transistor connected between a power supply terminal and a load terminal of said linear voltage regulator for providing an output current to said load, said MOS transistor being continually in a conductive state while said output current is being provided to said load;

a voltage feedback loop comprising an error amplifier for comparing a feedback voltage to a reference voltage and outputting an error signal to control a magnitude of a gate voltage of said MOS transistor so as to control said output current of said MOS transistor;

a current feedback loop comprising a current detector for detecting said output current and, in response to said detecting, generating a compensation gate voltage for said MOS transistor to stabilize the impedance of said MOS transistor, as seen at said load terminal, as said load fluctuates,

said current feedback loop having a faster response to load fluctuations than said voltage feedback loop.

2. The voltage regulator of claim 1 wherein said MOS transistor is an NMOS transistor and said current feedback loop lowers a gate voltage of said NMOS transistor when an increased current through said NMOS transistor is detected.

3. The voltage regulator of claim 1 wherein said current feedback loop substantially prevents rapid changes in current through said MOS transistor due to load fluctuations.

4. The voltage regulator of claim 1 further comprising a frequency compensation capacitor connected to said load terminal.

5. A voltage regulator comprising:

an MOS transistor connected between a power supply terminal and a load terminal for providing an output current to said load;

a voltage feedback loop comprising an error amplifier for comparing a feedback voltage to a reference voltage and outputting an error signal to control said output current of said MOS transistor;

a current feedback loop comprising a current detector for detecting said output current and, in response to said detecting, generating a compensation gate voltage for said MOS transistor to stabilize the impedance of said MOS transistor, as seen at said load terminal, as said load fluctuates,

said current feedback loop having a faster response to load fluctuations than said voltage feedback loop,

wherein said MOS transistor is a first NMOS transistor having a drain electrically coupled to a first voltage and a gate connected to a controller for controlling the current flow between said drain and a source of said first NMOS transistor, and wherein said current feedback loop comprises;

a second NMOS transistor having a gate electrically coupled to said gate of said first NMOS transistor, a drain electrically coupled to said first voltage, and a source electrically coupled to a first current source, said second NMOS transistor having a threshold voltage approximately equal to a threshold voltage of said first NMOS transistor, whereby a voltage produced at said source of said second NMOS transistor is approximately equal to a voltage at said gate of said first NMOS transistor minus said threshold voltage;

a first PMOS transistor having a source connected to said source of said second NMOS transistor and a drain connected to a second voltage through a first resistance, a gate of said first PMOS transistor being connected to said source of said first NMOS transistor through a level shifter which develops a voltage drop approximately equal to a threshold voltage of said first PMOS transistor; and

a third transistor having a control terminal electrically connected to said drain of said first PMOS transistor, a first current carrying terminal of said third transistor connected to said gate of said first NMOS transistor and a second current carrying terminal of said third transistor connected to said second voltage.

6. The voltage regulator of claim 5 wherein said level shifter is a second PMOS transistor having a source connected to said source of said first NMOS transistor, a drain connected to a second current source, and a gate connected to said drain of said second PMOS transistor, said second PMOS transistor having a threshold voltage substantially equal to a threshold voltage of said first PMOS transistor.

7. The voltage regulator of claim 5 wherein said control terminal of said third transistor is connected to said drain of said first PMOS transistor through a resistor and capacitor in series.

8. The voltage regulator of claim 5 wherein said third transistor is a bipolar transistor.

9. A method for generating a regulated voltage and stabilizing an output impedance of a linear voltage regulator comprising the steps of:

controlling an MOS transistor connected between a power supply terminal and a load terminal of said linear voltage regulator to provide an output current to said load, said MOS transistor being continually in a conductive state while said output current is being provided to said load;

comparing a feedback voltage at said load terminal to a reference voltage and outputting an error signal to control a magnitude of a gate voltage of said MOS transistor so as to control said output current of said MOS transistor, said step of comparing being performed by a voltage feedback loop; and

detecting said output current and, in response to said detecting, generating a compensation gate voltage for said MOS transistor to stabilize the impedance of said MOS transistor, as seen at said load terminal, as said load fluctuates, said step of detecting being performed by a current feedback loop,

said current feedback loop having a faster response to load fluctuations than said voltage feedback loop.

10. The method of claim 9 wherein said MOS transistor is an NMOS transistor and said current feedback loop lowers a gate voltage of said NMOS transistor when an increased current through said NMOS transistor is detected.

11. The method of claim 19wherein said current feedback loop substantially prevents rapid changes in current through said MOS transistor due to load fluctuations.