Memory with ferroelectric capacitor connectable to transistor gate

• US 5,559,733 A
• Filed: 06/07/1995
• Issued: 09/24/1996
• Est. Priority Date: 04/07/1994
• Status: Expired due to Fees

• Current Assignee: Olympus Optical Corporation Limited (Olympus Corporation), Symetrix Corporation
• Original Assignee: Olympus Optical Corporation Limited (Olympus Corporation), Symetrix Corporation
• Inventors: Mihara, Takashi, Paz de Araujo, Carlos A., McMillan, Larry D., Gregory, John W., Yoshimori, Hiroyuki
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): MAI, SON LUU
• Application Number:
  US08/482,765
• Time in Patent Office: 475 Days
• Field of Search: 365/145, 365/149, 257/295, 257/410, 257/411, 257/300, 257/324, 257/390
• US Class Current: 365/145
• CPC Class Codes: G11C 11/22 using ferroelectric elements
• CPC Class Codes: G11C 11/223 using MOS with ferroelectric gate insulating film

Abstract

A ferroelectric memory includes a constant voltage source, a capacitor having first and second electrodes, and a transistor having a gate. A switch alternately connects the gate of the transistor to the first electrode and the constant voltage source. In another embodiment, there are two ferroelectric transistors, and the first electrode of each capacitor is connected both to the gate of the transistor and to a voltage source external of the memory.

Claims

1. A ferroelectric memory comprising:

a constant voltage source;

a ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric material between said first and second electrodes;

a transistor having a gate; and

means for alternately connecting said gate to said first electrode and said constant voltage source.

2. A ferroelectric memory as in claim 1 wherein said constant voltage source is an electronic ground.

3. A ferroelectric non-volatile, non-destructive read-out integrated circuit memory unit comprising:

a plurality of ferroelectric capacitors, each ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric material between said first and second electrodes;

a transistor having a gate; and

said first electrode of each of said capacitors connected to said gate of said transistor.

4. A memory unit as in claim 3 and further comprising electrical connector means for electrically connecting said first electrode of each of said capacitors to a voltage source external of said memory unit.