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II-VI semiconductor diode laser having a strained layer

  • US 5,561,680 A
  • Filed: 12/20/1994
  • Issued: 10/01/1996
  • Est. Priority Date: 12/20/1994
  • Status: Expired due to Fees
First Claim
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1. A II-VI semiconductor diode laser comprising:

  • a substrate;

    a II-VI semiconductor layer structure disposed atop the substrate and including a II-VI semiconductor active layer and a II-VI semiconductor electrical contact layer disposed over the II-VI semiconductor active layer; and

    a strained layer disposed over the II-VI semiconductor layer structure.

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