II-VI semiconductor diode laser having a strained layer

• US 5,561,680 A
• Filed: 12/20/1994
• Issued: 10/01/1996
• Est. Priority Date: 12/20/1994
• Status: Expired due to Fees

• Current Assignee: Philips Electronics North America Corporation (Koninklijke Philips N.V.)
• Original Assignee: Philips Electronics North America Corporation (Koninklijke Philips N.V.)
• Inventors: Drenten, Ronald R., Haberern, Kevin W.
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): Song, Yisun
• Application Number:
  US08/359,379
• Time in Patent Office: 651 Days
• Field of Search: 372/46, 372/43, 372/45
• US Class Current: 372/46.01
• CPC Class Codes: H01S 5/04252 characterised by the material
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/2214 based on oxides or nitrides
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/327 in AIIBVI compounds, e.g. ZnCdSe-laser

Abstract

A II-VI semiconductor diode laser has a strained layer disposed on top of the structure. This strained layer, having a thickness of between about 0.05 microns and 2 microns, is either a single film or a stack of films, preferably of metal. The strain field produced by this layer in the semiconductor layer structure produces a change in the refractive index of the structure, due to the photo-elastic effect. By virtue of this effect a strain-induced waveguide is provided in the diode laser, with a strained layer in an edge, stripe or window structure. Furthermore, a tensely-strained layer covering the entire structure is used to produce a strain field similar to that which occurs when the structure is bent. This strain field will produce strain-enhanced gain in the underlying structure, which allows for operation of the laser at a lower threshold current.

Claims

1. A II-VI semiconductor diode laser comprising:

a substrate;

a II-VI semiconductor layer structure disposed atop the substrate and including a II-VI semiconductor active layer and a II-VI semiconductor electrical contact layer disposed over the II-VI semiconductor active layer; and

a strained layer disposed over the II-VI semiconductor layer structure.

2. A II-VI semiconductor diode laser as claimed in claim 1, further comprising an insulating layer between said strained layer and said II-VI semiconductor layer structure, said insulating layer covering part of said II-VI semiconductor layer structure.

3. A II-VI semiconductor diode laser as claimed in claim 2, wherein said strained layer contacts a stripe of said II-VI semiconductor layer structure adjacent the insulating layer.

4. A II-VI semiconductor diode laser as claimed in claim 2, wherein said insulating layer has a stripe-shaped opening therethrough, and said strained layer covers said insulating layer.

5. A II-VI semiconductor diode laser as claimed in claim 2, wherein said insulating layer is a mechanically-soft insulating layer having a stripe-shaped opening therethrough exposing a stripe of said II-VI semiconductor layer structure, and said strained layer covers said insulating layer and said stripe of said II-VI semiconductor layer structure exposed through said stripe-shaped opening in said insulating layer.

6. A II-VI semiconductor diode laser as claimed in claim 5, wherein said mechanically-soft insulating layer is a polyimid layer.

7. A II-VI semiconductor diode laser as claimed in claim 1, wherein said electrical contact layer includes an ion-implanted electrically-insulating region, and said strained layer covers said insulating region and an adjacent stripe of said electrical contact layer.

8. A II-VI semiconductor diode laser as claimed in claim 1, wherein said electrical contact layer is at least partly ion implanted, except for a stripe-shaped area.

9. A II-VI semiconductor diode laser as claimed in claim 8, wherein said strained layer covers the II-VI semiconductor laser structure.

10. A II-VI semiconductor diode laser as claimed in claim 8, further comprising a mechanically-soft metal contact stripe contacting the stripe-shaped area of the electrical contact layer.

11. A II-VI semiconductor diode laser as claimed in claim 10, wherein said strained layer covers said electrical contact layer and said mechanically-soft metal contact stripe.

12. A II-VI semiconductor diode laser as claimed in claim 1, wherein said II-VI semiconductor layer structure further comprises a first and a second II-VI semiconductor cladding layer, said first and said second cladding layers being on opposite sides of said active layer.

13. A II-VI semiconductor diode laser as claimed in claim 12, wherein said II-VI semiconductor layer structure further comprises a first and a second waveguiding layer, said first waveguiding layer being disposed between said first cladding layer and said active layer, and said second waveguiding layer being disposed between said second cladding layer and the active layer.

14. A II-VI semiconductor diode laser as claimed in claim 1, wherein said strained layer comprises a single film.

15. A II-VI semiconductor diode laser as claimed in claim 1, wherein said strained layer comprises a stack of films.

16. A II-VI semiconductor diode laser as claimed in claim 1, wherein said strained layer comprises a metal.

17. A II-VI semiconductor diode laser as claimed in claim 1, wherein said strained layer comprises a sticking layer.