Thin film transistor

• US 5,563,426 A
• Filed: 11/18/1994
• Issued: 10/08/1996
• Est. Priority Date: 12/04/1992
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fukunaga, Takeshi, Takayama, Toru, Takemura, Yasuhiko, Uochi, Hideki, Zhang, Hongyong
• Primary Examiner(s): Fahmy, Wael M.
• Application Number:
  US08/341,106
• Time in Patent Office: 690 Days
• Field of Search: 257/66, 257/67, 257/69, 257/70, 257/75, 257/57, 257/53, 257/52, 257/350, 257/351
• US Class Current: 257/66
• CPC Class Codes: G09G 2300/0408 Integration of the drivers onto the display substrate
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Abstract

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

Claims

1. A semiconductor device formed on an insulating surface, said device comprising:

a semiconductor island comprising crystalline silicon;

source, drain and channel regions formed within said semiconductor island;

a gate electrode adjacent to said semiconductor island with a gate insulating film interposed therebetween,

wherein said semiconductor island contains a material selected from the group consisting of nickel, iron, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, scandium, titanium, vanadium, chromium, manganese, copper, zinc, gold and silver at a substantially uniform concentration throughout said semiconductor island.

2. The semiconductor device of claim 1 wherein said material is contained at a concentration not higher than 1 atomic %.

3. The semiconductor device of claim 1 wherein said crystalline silicon further contains hydrogen at 5 atomic % or less.

4. A semiconductor device formed on an insulating surface, said device comprising:

a semiconductor island comprising crystalline silicon; and

a gate electrode adjacent to said semiconductor island with a gate insulating layer interposed therebetween,

wherein said semiconductor island contains a material capable of promoting a crystallization of an amorphous silicon at a substantially uniform concentration throughout said semiconductor island, and hydrogen at a concentration of 5 atomic % or less.

5. The semiconductor device of claim 4 wherein said material is a metal selected from the group consisting of nickel, iron, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, scandium, titanium, vanadium, chromium, manganese, copper, zinc, gold and silver.

6. A semiconductor device formed on an insulating surface, said device comprising:

a semiconductor island comprising crystalline silicon doped with hydrogen at 5 atomic % or less; and

a gate electrode adjacent to said semiconductor island with a gate insulating layer interposed therebetween,

wherein said semiconductor island contains a material selected from the group consisting of nickel, iron, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, scandium, titanium, vanadium, chromium, manganese, copper, zinc, gold and silver at a substantially uniform concentration throughout said semiconductor island.