Programmable power generation circuit for flash eeprom memory systems

• US 5,563,825 A
• Filed: 06/07/1995
• Issued: 10/08/1996
• Est. Priority Date: 10/17/1994
• Status: Expired due to Term

• Current Assignee: Sandisk Technologies Incorporated (Western Digital Corporation)
• Original Assignee: SanDisk Corporation (Western Digital Corporation)
• Inventors: Mofidi, Mehrdad, Cernea, Raul-Adrian, Lee, Douglas J., Mehrotra, Sanjay
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Hoang, Huan
• Application Number:
  US08/478,244
• Time in Patent Office: 489 Days
• Field of Search: 365/185.18, 365/185.23, 365/185.29, 365/226, 365/189.09, 365/185.33, 327/536
• US Class Current: 365/185.18
• CPC Class Codes: G11C 16/16 for erasing blocks, e.g. arrays, words, groups
• CPC Class Codes: G11C 16/30 Power supply circuits

Abstract

An flash EEPROM system functioning as a mass storage medium for a host computer includes a controller and at least one flash EEPROM memory module. The flash EEPROM memory module includes at least one flash EEPROM chip having an on-chip programmable power generation circuit including a high voltage generator circuit capable of generating a high voltage Vpp from a logic level voltage Vdd provided to the chip, a serial protocol logic circuit, a data latch, a data bus, a register address decoder, and a multi-voltage generator/regulator. The multi-voltage generator/regulator includes a plurality of registers and provides the programming, reading, and erasing voltages required for proper operation of the flash EEPROM system from digital values stored in the plurality of registers by the controller. The high voltage generator circuit includes both high current and low current charge pump circuits for generating the high voltage Vpp. The high current charge pump circuit is connected to relatively large off-chip charge storage devices, and the low current charge pump circuit is connected to relatively small on-chip charge storage devices. The controller may activate one or the other of the high or low current charge pump circuits through control signals connected to enabling circuitry respectively connected to the high and low current charge pump circuits. Alternatively, the controller may deactivate both the high and low current charge pump circuits and cause the high voltage Vpp to be provided from other circuitry on another flash EEPROM chip in the flash EEPROM module.

Claims

1. In a flash EEPROM chip having a plurality of flash EEPROM cells, a voltage generator circuit comprising:

first means connected to a low voltage source, for generating, in response to a first state of a mode select signal, a high voltage and a high current suitable for programming selected ones of said plurality of flash EEPROM cells; and

second means connected to said low voltage source, for generating, in response to a second state of said mode select signal, said high voltage and a low current suitable for reading and erasing selected ones of said plurality of flash EEPROM cells.

2. The voltage generator circuit as recited in claim 1, wherein a first plurality of capacitors are connected to said flash EEPROM chip, and said first means includes a first plurality of transistors connected to said first plurality of capacitors, and said second means includes a second plurality of capacitors and a second plurality of transistors connected to said second plurality of capacitors.

3. The voltage generator circuit as recited in claim 2, wherein said first and second pluralities of capacitors have respective charge storage capacities, and the charge storage capacity of said first plurality of capacitors is greater than the charge storage capacity of said second plurality of capacitors.