Method and device for detecting the end point of plasma process

• US 5,565,114 A
• Filed: 08/23/1994
• Issued: 10/15/1996
• Est. Priority Date: 03/04/1993
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited, Tokyo Electron Yamanashi Ltd. (Tokyo Electron Limited)
• Inventors: Koshimizu, Chishio, Saito, Susumu, Eguchi, Kazuo
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/294,396
• Time in Patent Office: 784 Days
• Field of Search: 156/626.1, 156/345, 216/60, 204/192.13, 204/192.33, 204/298.32, 204/298.03, 118/712, 427/10, 356/72, 356/316
• US Class Current: 216/60
• CPC Class Codes: G01N 21/68 using high frequency electric fields
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

This invention provides an end point detection method including the steps of sequentially detecting, when a process using a plasma is performed for an object to be processed, emission spectra in a specific wavelength band of an active species in the plasma by using a photodetector, calculating sum average values of emission intensities of the emission spectra, calculating the ratio or the difference between the sum average values to obtain a calculated value, and determining a point at which the calculated value exceeds a predetermined reference value as an end point of the process.

Claims

1. An end point detection method comprising the steps of:

sequentially detecting, when a process using a plasma is performed for an object to be processed, emission spectra in two specific wavelength bands of two active species in the plasma by using a photodetecting means;

obtaining an average value of emission intensities for each of the emission spectra during a time period;

making two graphs, each showing the relationship between said average value and time, substantially equal to each other in inclination;

calculating a ratio or a difference between the two graphs to obtain a coefficient;

obtaining a calculated value using the coefficient and a newly obtained emission intensity; and

determining a point at which said calculated value exceeds a reference value as an end point of the process.

2. A method according to claim 1, wherein the specific wavelength band of said active species are set in regions in which an emission intensity of said active species appears more strongly than peak values of emission intensities of other active species.

3. A method according to claim 1, wherein said active species are selected from the group consisting of components of a process gas and reaction products formed by the plasma process.

4. A method according to claim 1, wherein the specific wavelength bands of said active species are set in regions not including a peak value of an emission intensity of silicon.

5. A method according to claim 1, wherein the process using a plasma is etching.

6. An end point detection method comprising the steps of:

sequentially detecting, when a process using a plasma is performed for an object to be processed, an emission spectrum in a specific wavelength band of at least one first active species and a peak value of an emission intensity of at least one second active species in the plasma by using photodetecting means;

obtaining an average value of an emission intensity of the emission spectrum during a time period;

making two graphs, each showing the relationship between said average value and time and the relationship between said peak value and time, substantially equal to each other in inclination;

calculating a ratio or a difference between the peak value of the emission intensity and said average value to obtain a coefficient;

obtaining a calculated value using the coefficient and a newly obtained emission intensity; and

determining a point at which the calculated value exceeds a reference value as an end point of the process.

7. A method according to claim 6, wherein the specific wavelength band of said first active species or the peak value of the emission intensity of said second active species is set in a region in which an emission intensity of said first or second active species appears more strongly than peak values of emission intensities of other active species.

8. A method according to claim 6, wherein said first or second active species is selected from the group consisting of components of a process gas and reaction products formed by the plasma process.

9. A method according to claim 6, wherein the specific wavelength band of said first active species and the peak value of the emission intensity of said second active species are set in a region not including a peak value of an emission intensity of silicon.

10. A method according to claim 6, wherein a peak value of an emission intensity of carbon monoxide is used as the peak value of said second active species.

11. A method according to claim 6, wherein the process using a plasma is etching.

12. An end point detection apparatus comprising:

an average value calculating means for calculating average values of emission intensities of emission spectra obtained by detecting, by using photodetecting means, the emission spectra generated in two specific wavelength bands when a process using a plasma is performed for an object to be processed;

calculating means for calculating a ratio or a difference between average values, to obtain a calculated value;

means for making two graphs, each showing a relationship between said average value and time, made substantially equal to each other in inclination; and

determining means for determining a point at which the calculated value exceeds a reference value as an end point of the process.

13. A plasma process apparatus for applying a process using a plasma to an object, comprising:

a pair of electrodes arranged in a process chamber, an object to be processed being placed on one of said electrodes, and a high frequency power being applied therebetween to convert a process gas into a plasma;

light-condensing means for condensing light emitted from the plasma in said process chamber;

photodetecting means for detecting emission spectra in two specific wavelength bands from the light condensed by said light-condensing means;

average value calculating means for calculating average values of emission intensities for each of the emission spectra on the basis of information from said photodetecting means;

calculating means for calculating a ratio or a difference between average values, to obtain a calculated value;

means for making two graphs, each showing a relationship between said average value and time, made substantially equal to each other in inclination; and

determining means for determining a point at which the calculated value exceeds a reference value as an end point of the process.

14. A system according to claim 13, wherein the process using a plasma is etching.