Light emitting diode with current blocking layer

• US 5,565,694 A
• Filed: 07/10/1995
• Issued: 10/15/1996
• Est. Priority Date: 07/10/1995
• Status: Expired due to Term

• Current Assignee: Epistar Corporation
• Original Assignee: Huang, Kuo-Hsin, Tzer-Perng Chen
• Inventors: Chen, Tzer-Perng, Huang, Kuo-Hsin
• Primary Examiner(s): JACKSON JR, JEROME
• Application Number:
  US08/500,043
• Time in Patent Office: 463 Days
• Field of Search: 257/96, 257/97, 257/98, 372/45, 372/46
• US Class Current: 257/97
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/145 with a current-blocking structure

Abstract

A light emitting diode includes a first conductivity type GaAs substrate having a second conductivity type region as a current blocking layer. A first conductivity type distributed Bragg reflector layer is formed on the GaAs substrate. An AlGaInP double heterostructure including a lower cladding AlGaInP layer of the first conductivity type, an undoped active AlGaInP layer, and an upper cladding AlGaInP layer of the second conductivity type is grown on top of the distributed Bragg reflector layer. The undoped active AlGaInP layer can also be replaced by a multi-layer quantum well structure of AlGaInP or a strained multi-layer quantum well structure of AlGaInP. A second conductivity type layer of low energy band gap and high conductivity material is formed on the AlGaInP double heterostructure. A GaP window layer of the second conductivity type is then formed on top of the low energy band gap layer.

Claims

1. A light emitting diode having a current blocking layer comprising:

a semiconductor substrate GaAs of a first conductivity type, said substrate having a top side and a bottom side;

a first electrode formed on said bottom side of said substrate;

a second conductivity type region formed by diffusing or implanting metallic ions into said top side of said substrate, said region forming a current blocking area;

an AIGaInP double heterostructure grown on said top side of said GaAs substrate, said double heterostructure including a lower cladding AIGaInP layer of said first conductivity type, an undoped active AIGaInP layer, and an upper cladding AIGaInP layer of said second conductivity type;

a low energy band gap and high conductivity layer of said second conductivity type formed on said AIGaInP double heterostructure;

a GaP window layer of said second conductivity type formed on said low energy band gap and high conductivity layer; and

a second electrode formed on a part of said window layer.

2. The light emitting diode according to claim 1, wherein said undoped active AlGaInP layer is replaced by a multi-layer quantum well structure having AlGaInP.

3. The light emitting diode according to claim 1, wherein said undoped active AlGaInP layer is replaced by a strained multi-layer quantum well structure having AlGaInP.

4. The light emitting diode according to claim 1, wherein a distributed Bragg reflector of said first conductivity type lies between the GaAs substrate and the AlGaInP double heterostructure.