Plasma processing apparatus and method for carrying out plasma processing by using such plasma processing apparatus

• US 5,567,268 A
• Filed: 01/19/1995
• Issued: 10/22/1996
• Est. Priority Date: 01/31/1994
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Kadomura, Shingo
• Primary Examiner(s): Powell, William
• Application Number:
  US08/374,822
• Time in Patent Office: 642 Days
• Field of Search: 156/643.1, 156/345 P, 216/67, 216/70, 204/298.37
• US Class Current: 156/345.28
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3211 Antennas, e.g. particular shapes of coils
• CPC Class Codes: H01J 37/32165 Plural frequencies

Abstract

A helicon wave plasma producing section is provided in the top area of process chamber, and ICP (Inductively Coupled Plasma) producing section is provided in the area on the downstream side thereof. Source power is supplied from a common plasma excitation RF power supply through control means to loop antenna in the former and multi-turn antenna in the latter. Thus, helicon wave plasma diffused from a bell-jar and inductively coupled plasma newly dissociated and produced by inductively coupled discharge are caused to coexist to carry out plasma processing, thereby making it possible to conduct control of ion/radical production ratio. Thus, higher accuracy plasma processing can be carried. Further, when applied to dry etching, ion assist mechanism is caused to effectively function to permit implementation of satisfactory high speed anisotropic processing as well.

Claims

1. A plasma processing apparatus comprising:

a vacuum vessel for containing a wafer;

a helicon wave plasma producing section having a plasma production chamber circumferentially surrounded by a first high frequency antenna and magnetic field producing means and connected to the vacuum vessel, and adapted for supplying helicon wave plasma into the vacuum vessel;

an inductively coupled plasma producing section having a second high frequency antenna which circumferentially surrounds the vacuum vessel, and adapted for producing inductively coupled plasma within the vacuum vessel; and

control means for controlling operations of the helicon wave plasma producing section and the inductively coupled plasma producing section.

2. A plasma processing apparatus as defined in claim 1, wherein the second high frequency antenna is symmetrically wound with axial direction of magnetic field produced by the magnetic field producing means being as a center.

3. A plasma processing apparatus as defined in claim 1, wherein auxiliary magnetic field producing means for converging divergence magnetic field in the vicinity of the position where the wafer is held is circumferentially provided outside the vacuum vessel.

4. A plasma processing apparatus as defined in claim 1, wherein the control means includes a switch capable of carrying out simultaneous operation or time series operation of the first and second high frequency antennas.

5. A plasma processing apparatus as defined in claim 1, wherein the control means includes phase control means for allowing phases of high frequency powers of the same frequency respectively applied to the first and second high frequency antennas to be shifted to each other.

6. A plasma processing method wherein the plasma processing apparatus as defined in claim 1, is used to carry out a plasma processing with respect to the wafer contained with the vacuum vessel.

7. A plasma processing method wherein the plasma processing apparatus as defined in claim 1 is used to carry out dry etching of the wafer as the plasma processing while controlling production ratio of chemical species within the vacuum vessel.

8. A plasma processing apparatus as defined in claim 4, wherein the control means includes phase control means for allowing phases of high frequency powers of the same frequency respectively applied to the first and second high frequency antennas to be shifted to each other.

9. A plasma processing method wherein the plasma processing apparatus as defined in claim 5 is used to carry out dry etching of the wafer as the plasma processing while controlling production ratio of chemical species within the vacuum vessel.

10. A plasma processing method wherein the plasma processing apparatus as defined in claim 8 is used to carry out dry etching of the wafer as the plasma processing while controlling production ratio of chemical species within the vacuum vessel.

11. A plasma processing apparatus as defined in claim 1, wherein the control means includes a switch capable of carrying out simultaneous operation and time series operation of the first and second high frequency antennas.