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Semiconductor device having a crystallized island semiconductor layer

  • US 5,567,967 A
  • Filed: 06/27/1994
  • Issued: 10/22/1996
  • Est. Priority Date: 06/28/1993
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • an insulating substrate;

    a semiconductor layer formed on the insulating substrate, the semiconductor layer comprising amorphous silicon having a light-shield layer;

    an insulating layer formed on the semiconductor layer; and

    a crystallized island semiconductor layer formed on the insulating layer, the crystallized island semiconductor layer comprising silicon having a source and a drain.

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