Optical device with low electrical and thermal resistance bragg reflectors

• US 5,568,499 A
• Filed: 04/07/1995
• Issued: 10/22/1996
• Est. Priority Date: 04/07/1995
• Status: Expired due to Term

• Current Assignee: Sandia Corporation (Martin Marietta Corporation)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Lear, Kevin L.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/418,730
• Time in Patent Office: 564 Days
• Field of Search: 372/92, 372/45, 372/46, 372/96, 372/99, 257/21, 257/97, 257/98
• US Class Current: 372/45.01
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18313 by oxidizing at least one of the DBR layers
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities

Abstract

A compound-semiconductor optical device and method. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors.

Claims

1. An optical device comprising at least one distributed Bragg reflector mirror having at least one pair of semiconductor layers epitaxially grown one upon another, one layer in each pair having an index of refraction which is different from the index of refraction of the other layer in each pair, any two adjacent semiconductor layers of the distributed Bragg reflector mirror forming a heterojunction, a first layer of the two adjacent layers having a first composition and a first bandgap and a second layer of the two adjacent layers having a second composition and a second bandgap, the second bandgap being greater than the first bandgap,

characterized in that a first region of each heterojunction adjacent to the first layer is composition graded from the first composition to a third composition intermediate between the first and second compositions, and a second region of each heterojunction adjacent to the second layer is composition graded from the third composition to the second composition, the second region having a smaller variation in composition with distance in the growth direction than the first region.

2. The optical device of claim 1 in which a thickness in the growth direction of the first region of each heterojunction is smaller than the thickness of the second region of each heterojunction.

3. The optical device of claim 1 in which an absolute magnitude of a second derivative of a bandgap energy with distance in the growth direction is smaller in the second region than in the first region.

4. The optical device of claim 1 in which the second region of each heterojunction is at least in part semiparabolically graded in composition.

5. The optical device of claim 1 in which the first and second regions of each heterojunction are at least in part semiparabolically graded in composition.

6. The optical device of claim 1 in which the second region is modulation doped.

7. The optical device of claim 1 in which the distributed Bragg reflector mirror is a unipolar, p-type structure.

8. The optical device of claim 1 in which the device is a light-emitting device selected from the group consisting of a vertical-cavity surface-emitting laser, a light-emitting diode, and a resonant-cavity light-emitting diode.

9. The optical device in claim 1 in which the device is a resonant-cavity photodetector.

10. An optical device comprising at least one distributed Bragg reflector mirror having at least one pair of semiconductor layers epitaxially grown one upon another, one layer in each pair having an index of refraction which is different from the index of refraction of the other layer in each pair, any two adjacent semiconductor layers of the distributed Bragg reflector mirror forming a heterojunction, a first layer of the two adjacent layers having a first composition and a first bandgap and a second layer of the two adjacent layers having a second composition and a second bandgap, the second bandgap being greater than the first bandgap,

characterized in that a first region of each heterojunction adjacent to the first layer is abruptly varied in composition from the first composition to a third composition intermediate between the first and second compositions, and a second region of each heterojunction adjacent to the second layer is smoothly varied in composition from the third composition to the second composition.

11. The optical device of claim 10 in which a thickness in the growth direction of the first region of each heterojunction is smaller than the thickness of the second region of each heterojunction.

12. The optical device of claim 10 in which an absolute magnitude of a second derivative of a bandgap energy with distance in the growth direction is smaller in the second region than in the first region.

13. The optical device of claim 10 in which the second region of each heterojunction is at least in part semiparabolically graded in composition.

14. The optical device of claim 10 in which the first and second regions of each heterojunction are at least in part semiparabolically graded in composition.

15. The optical device of claim 10 in which the second region is modulation doped.

16. The optical device of claim 10 in which the distributed Bragg reflector mirror is a unipolar, p-type structure.

17. The optical device of claim 10 in which the device is a light-emitting device selected from the group consisting of a vertical-cavity surface-emitting laser, a light-emitting diode, and a resonant-cavity light-emitting diode.

18. The optical device in claim 10 in which the device is a resonant-cavity photodetector.

19. An optical device comprising:

(a) n-type and p-type semiconductor distributed Bragg reflector mirrors, each mirror having at least one pair of semiconductor layers epitaxially grown one upon another, one layer in each pair of semiconductor layers having an index of refraction which is different from the index of refraction of the other layer in each pair of semiconductor layers, any two adjacent semiconductor layers of the distributed Bragg reflector mirror forming a heterojunction, a first layer of the two adjacent layers having a first composition and a first bandgap and a second layer of the two adjacent layers having a second composition and a second bandgap, the second bandgap being greater than the first bandgap,

characterized in that a first region of each heterojunction adjacent to the first layer is composition graded from the first composition to a third composition intermediate between the first and second compositions, and a second region of each heterojunction adjacent to the second layer is composition graded from the third composition to the second composition, the second region having a smaller variation in composition with distance in the growth direction than the first region;

(b) an active region formed between the n-type and p-type mirrors; and

(c) electrodes operatively connected to the n-type and p-type mirrors for applying a bias voltage therebetween.

20. The optical device of claim 19 in which a thickness in the growth direction of the first region of each heterojunction is smaller than the thickness of the second region of each heterojunction.

21. The optical device of claim 19 in which an absolute magnitude of a second derivative of a bandgap energy with distance in the growth direction is smaller in the second region than in the first region.

22. The optical device of claim 19 in which the second region of each heterojunction is at least in part semiparabolically graded in composition.

23. The optical device of claim 19 in which the first and second regions of each heterojunction are at least in part semiparabolically graded in composition.

24. The optical device of claim 19 in which the second region is modulation doped.

25. The optical device of claim 19 in which the device is a light-emitting device selected from the group consisting of a vertical-cavity surface-emitting laser, a light-emitting diode, and a resonant-cavity light-emitting diode.

26. The optical device of claim 19 in which the device is a resonant-cavity photodetector.

27. The optical device of claim 19 further including a plurality of pairs of dielectric layers formed above the last-grown distributed Bragg reflector mirror for increasing a reflectivity thereof, the index of refraction of one dielectric layer in each pair of dielectric layers being different from the other dielectric layer in each pair of dielectric layers.

28. An optical device comprising:

(a) n-type and p-type semiconductor distributed Bragg reflector mirrors, each mirror having at least one pair of semiconductor layers epitaxially grown one upon another, one layer in each pair having an index of refraction which is different from the index of refraction of the other layer of the pair, any two adjacent semiconductor layers forming a heterojunction, a first layer of the two adjacent layers having a first composition and a first bandgap and a second layer of the two adjacent layers having a second composition and a second bandgap, the second bandgap being greater than the first bandgap,

characterized in that a first region of each heterojunction adjacent to the first layer of at least one of the distributed Bragg reflector mirrors is abruptly varied in composition from the first composition to a third composition intermediate between the first and second compositions, and a second region of each heterojunction adjacent to the second layer of the same at least one distributed Bragg reflector mirror is smoothly varied in composition from the third composition to the second composition;

(b) an active region formed between the n-type and p-type mirrors; and

(c) electrodes operatively connected to the n-type and p-type mirrors for applying a bias voltage therebetween.

29. The optical device of claim 28 in which the second region of each heterojunction is semiparabolically graded in composition.

30. The optical device of claim 28 in which the second region is modulation doped.

31. The optical device of claim 28 in which the device is a light-emitting device selected from the group consisting of a vertical-cavity surface-emitting laser, a light-emitting diode, and a resonant-cavity light-emitting diode.

32. The optical device of claim 28 further including a plurality of pairs of dielectric layers formed above one of the distributed Bragg reflector mirrors for increasing a reflectivity thereof, the index of refraction of one dielectric layer in each pair of dielectric layers being different from the other dielectric layer in each pair of dielectric layers.

33. The optical device of claim 28 in which the device is a light-emitting device selected from the group consisting of a vertical-cavity surface-emitting laser, a light-emitting diode, and a resonant-cavity light-emitting diode.

34. The optical device of claim 28 in which the device is a resonant-cavity photodetector.