Electrode clamping assembly and method for assembly and use thereof

• US 5,569,356 A
• Filed: 05/19/1995
• Issued: 10/29/1996
• Est. Priority Date: 05/19/1995
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Frazier, Robert A., Miller, Ivo A., Calvisi, Michael L., Lenz, Eric H.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/445,292
• Time in Patent Office: 529 Days
• Field of Search: 156/345 P, 156/643.1, 156/657.1, 156/659.1, 156/662.1, 216/2, 216/67, 216/68, 216/69, 216/70, 216/71, 216/79, 204/192.32, 204/192.37, 204/298.31, 204/298.38, 204/298.39
• US Class Current: 438/729
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32532 Electrodes

Abstract

An electrode clamping assembly for a plasma reaction chamber wherein processing of a single wafer can be carried out. The electrode assembly includes a support member, an electrode such as a silicon showerhead electrode in the form of a disk having uniform thickness and a clamping ring which provides a resilient clamping force pressing against the showerhead electrode. The clamping member can be a ring of elastically deformable material and the clamping member can be tightened by a plurality of elastic spaced-apart bolts such that the clamping member is compressed and provides the resilient clamping force throughout temperature cycling of the electrode assembly during wafer processing. Heat conduction between the showerhead electrode and the support member can be improved by supplying pressurized process gas to a gap therebetween. The clamping member also provides plasma confinement in an area between the electrode and the wafer being processed.

Claims

1. An electrode assembly of a plasma reaction chamber for wafer processing, comprising:

a support member having a lower surface facing a wafer to be processed in the reaction chamber;

an electrode having a lower surface facing the wafer, the electrode having an upper surface of an outer edge thereof facing the lower surface of the support member; and

a clamping member engaging the outer edge of the electrode and resiliently pressing the electrode against the support member.

2. The electrode assembly of claim 1, wherein the electrode comprises a showerhead electrode and the support member includes a gas passage supplying a process gas to the upper surface of the electrode.

3. The electrode assembly of claim 2, wherein the support member includes a cavity and at least one baffle plate located in the cavity, the gas passage supplying process gas into a space between the lower surface of the support member and an upper surface of the baffle adjacent thereto.

4. The electrode assembly of claim 1, wherein the clamping member comprises a ring having a main portion facing the support member and an inwardly extending flange in contact with the outer edge of the electrode and pressing the upper surface of the electrode against the lower surface of the support member.

5. The electrode assembly of claim 4, wherein the flange of the clamping member is axisymmetrically displaced relative to the main portion of the clamping member.

6. The electrode assembly of claim 1, wherein the support member includes a gas passage for supplying process gas into a space between an outer portion of the upper surface of the electrode and the lower surface of the support member.

7. The electrode assembly of claim 6, wherein the process gas in the space is at a higher pressure than the processing gas in the reaction chamber and cools the electrode.

8. The electrode assembly of claim 1, wherein the clamping member includes a gas passage for monitoring gas pressure in an area adjacent an exposed surface of the electrode.

9. The electrode assembly of claim 1, wherein the clamping member is of an elastically deformable material.

10. The electrode assembly of claim 1, wherein the clamping member is of an inelastic material selected from the group consisting of ceramic, metallic, cermet and composite materials.

11. The electrode assembly of claim 1, wherein the clamping member is secured to the support member by a plurality of elastic bolts.

12. The electrode assembly of claim 1, wherein the electrode comprises a thermally and electrically conductive disk and the clamping member comprises a ring of dielectric material having an inwardly extending flange, an upper surface of the flange contacting an outer portion of an exposed surface of the electrode.

13. The electrode assembly of claim 12, wherein the disk comprises single crystal silicon, graphite or silicon carbide.

14. The electrode assembly of claim 8, wherein a first elastic seal is located between the electrode and the support member, the first elastic seal extending around the outer edge of the electrode and a second elastic seal is located between the clamping member and the support member, the second elastic seal surrounding the gas passage in the clamping member.

15. A method of assembling a showerhead electrode assembly of a plasma reaction chamber, comprising:

arranging a support member having a gas passage supplying a process gas to a lower surface of the support member and a showerhead electrode having an outer edge such that an upper surface of the outer edge of the showerhead electrode faces the lower surface of the support member; and

engaging a clamping member with the outer edge of the showerhead electrode and attaching the showerhead electrode to the support member such that the clamping member provides a resilient clamping force pressing against the showerhead electrode.

16. The method of claim 15, wherein the showerhead electrode is attached to the support member such that process gas is supplied to a space between the lower surface of the support member and the upper surface of the showerhead electrode, the process gas conducting heat between the showerhead electrode and the support member.

17. The method of claim 15, wherein the clamping member comprises an elastically deformable ring having an inwardly extending flange, the method including placing the flange in contact with the outer edge of the showerhead electrode and elastically deforming the ring such that the outer edge of the showerhead electrode is pressed against the lower surface of the support member.

18. The method of claim 15, wherein the support member includes a cavity, the method including mounting at least one baffle plate in the cavity such that the gas passage supplies process gas into a space between the lower surface of the support member and an upper surface of the baffle plate adjacent thereto.

19. The method of claim 15, wherein the clamping member is of an elastically deformable material, the method including attaching the clamping member to the support member with a plurality of spaced apart bolts and tightening the bolts such that the clamping member is elastically compressed against the showerhead electrode.

20. The method of claim 19, wherein the bolts are of elastically deformable material.

21. The method of claim 15, wherein the showerhead electrode comprises a disk of uniform thickness and the clamping member comprises a ring having a inwardly extending flange, the method including placing an upper surface of the flange in contact with an outer portion of the exposed surface of the showerhead electrode.

22. The method of claim 15, wherein the clamping member is attached to the support member by a plurality of spaced apart bolts of elastically deformable material, the method comprising tightening the bolts such that the bolts are elastically deformed and resiliently clamp the showerhead electrode against the support member.

23. The method of claim 15, wherein the clamping member is of an inelastic material.

24. A method of processing a wafer in a plasma reaction chamber, comprising:

supplying a wafer to the plasma reaction chamber;

supplying process gas to a gas passage in a support member mounted in the plasma reaction chamber such that the process gas exits a lower surface of the support member and passes through an exposed lower surface of a showerhead electrode;

supplying electrical power to the showerhead electrode such that the electrical power passes through a contact zone between an upper surface of an outer edge of the electrode and the lower surface of the support member, the electrical power causing the process gas to form a plasma in contact with an upper surface of the wafer; and

confining the plasma in an area above the wafer with a clamping member which engages the outer edge of the showerhead electrode and attaches the showerhead electrode to the support member, the clamping member providing a resilient clamping force pressing against the showerhead electrode during processing of the wafer.

25. The method of claim 24, wherein the support member includes a cavity and at least one baffle plate located in the cavity and the support member includes a gas passage for supplying process gas, the method including supplying process gas into a space between the lower surface of the support member and an upper surface of the baffle plate adjacent thereto and supplying the process gas through the gas passage to a gap between an outer portion of an upper surface of the showerhead electrode and a lower surface of the support member.

26. The method of claim 24, further comprising monitoring gas pressure in an area adjacent an exposed surface of the showerhead electrode through a gas passage in the clamping member.

27. The method of claim 24, wherein the method includes etching a layer of material on the wafer.

28. The method of claim 27, wherein the method includes etching of a silicon dioxide layer on the wafer.

29. The method of claim 24, wherein the method includes depositing a layer of material on the wafer.