Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon

• US 5,569,487 A
• Filed: 01/23/1995
• Issued: 10/29/1996
• Est. Priority Date: 01/23/1995
• Status: Expired due to Fees

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Gasworth, Steven M., DeVre, Michael W.
• Primary Examiner(s): King, Roy V.
• Application Number:
  US08/376,564
• Time in Patent Office: 645 Days
• Field of Search: 427/79, 427/81, 427/577, 427/578, 427/580, 427/255.7, 437/919, 204/192.22
• US Class Current: 427/81
• CPC Class Codes: H01G 4/14 Organic dielectrics

Abstract

Capacitors with high dielectric strength and low dissipation factor over a wide range of frequencies comprise two or more conductive layers separated by at least one dielectric layer. The dielectric layer is of silicon-doped amorphous hydrogenated carbon, with suitable dopants including silane (which is preferred), tetraalkoxysilanes and polyorganosiloxanes.

Claims

1. A method for fabricating a capacitor which comprises providing a first conductive layer;

depositing a dielectric layer on said conductive layer, said dielectric layer being of silicon-doped amorphous hydrogenated carbon having a silicon content of about 1-2 atomic percent; and

depositing a second conductive layer on said dielectric layer.

2. A method according to claim 1 wherein the conductive layers are of aluminum, zinc or an aluminum/zinc alloy.

3. A method according to claim 1 wherein the source of the amorphous hydrogenated carbon in the dielectric layer is a C_1-4 hydrocarbon, butadiene, acetylene, acetone, methyl ethyl ketone, toluene or ethylbenzene.

4. A method according to claim 1 wherein the first conductive layer is conditioned for adhesion of the dielectric layer prior to deposition of said dielectric layer by subjecting it to a flow of argon at a power density in the range of about 0.5-0.75 W/cm².

5. A method according to claim 1 wherein a silane, a tetraalkoxysilane or a polyorganosiloxane is the source of the silicon in the dielectric layer.

6. A method according to claim 5 wherein the silicon source is silane (SiH₄).

7. A method according to claim 6 wherein the silane is introduced in combination with argon at a volume concentration of about 1-10%, based on the total of silicon reagent and argon.

8. A method according to claim 1 wherein the dielectric layer is deposited by plasma enhanced chemical vapor deposition.

9. A method according to claim 1 wherein the dielectric layer is deposited by cascaded arc.

10. A method according to claim 1 wherein the dielectric layer is deposited by sputtering.

11. A method according to claim 1 wherein the dielectric layer is deposited by ion beam deposition.