Zinc oxide piezoelectric crystal film on sapphire plane

• US 5,569,548 A
• Filed: 08/02/1994
• Issued: 10/29/1996
• Est. Priority Date: 08/05/1993
• Status: Expired due to Term

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Koike, Jun, Ieki, Hideharu
• Primary Examiner(s): Robinson, Ellis
• Assistant Examiner(s): JONES III, LEON
• Application Number:
  US08/284,889
• Time in Patent Office: 819 Days
• Field of Search: 428/699, 428/700, 428/701, 428/702, 428/910, 427/100, 310/313 R, 310/313 A, 310/360, 252/62.9
• US Class Current: 428/699
• CPC Class Codes: H03H 3/08 for the manufacture of resonators or networks using surface acoustic waves
• CPC Class Codes: H03H 9/02574 of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
• CPC Class Codes: H10N 30/076 by vapour phase deposition
• CPC Class Codes: Y10S 428/91 Product with molecular orientation

Abstract

When a zinc oxide piezoelectric crystal film is epitaxially grown on an R-plane sapphire substrate by sputtering, a target containing not more than 4.5 percent by weight of Cu with respect to the total content of Zn and Cu is employed so that the zinc oxide piezoelectric film contains Cu. Thus, it is possible to obtain a zinc oxide piezoelectric crystal film having excellent orientation.

Claims

1. A (1120)-plane zinc oxide piezoelectric crystal film being epitaxially grown on a surface of (0112) sapphire and being substantially parallel to the (0112)plane,

said zinc oxide piezoelectric crystal film containing Cu in an amount of 0.4 percent to not more than 4.5 percent by weight with respect to the total content of Zn and Cu.

2. A zinc oxide piezoelectric crystal film in accordance with claim 1, containing 0.4 to 4.0 percent by weight of Cu.

3. A zinc oxide piezoelectric crystal film in accordance with claim 2, containing 0.6 to 3.0 percent by weight of Cu.

4. A zinc oxide piezoelectric crystal film in accordance with claim 3, containing 0.9 to 2.0 percent by weight of Cu.

5. A zinc oxide piezoelectric crystal film in accordance with claim 1, in which the crystal film is a sputtered film.

6. A piezoelectric crystal device consisting essentially of

a (1120)-plane zinc oxide piezoelectric crystal film epitaxially grown on a surface of (0112) sapphire and being substantially parallel to the (0112)-plane,

said zinc oxide piezoelectric crystal film containing Cu in an amount of 0.4 percent to not more than 4.5 percent by weight with respect to the total content of Zn and Cu.

7. A device in accordance with claim 6, containing 0.4 to 4.0 % by weight of Cu.

8. A device in accordance with claim 7, containing 0.6 to 3.0% by weight of Cu.

9. A device in accordance with claim 8, containing 0.9 to 2.0% by weight of Cu.

10. A piezoelectric crystal device consisting of

a (1120)-plane zinc oxide piezoelectric crystal film being epitaxially grown on a surface of (0112) sapphire and being substantially parallel to the (0112)-plane,

said zinc oxide piezoelectric crystal film containing Cu in an amount of 0.4 percent to not more than 4.5 percent by weight with respect to the total content of Zn and Cu.

11. A device in accordance with claim 10, containing 0.4 to 4.0% by weight of Cu.

12. A device in accordance with claim 11, containing 0.6 to 3.0% by weight of Cu.

13. A device in accordance with claim 12, containing 0.9 to 2.0% by weight of Cu.