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Light emitting diode fabricated with resistors for variable light intensity

  • US 5,569,939 A
  • Filed: 01/27/1995
  • Issued: 10/29/1996
  • Est. Priority Date: 12/18/1991
  • Status: Expired due to Fees
First Claim
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1. A variable light intensity light emitting diode comprising:

  • a substrate doped with at least one of P-type and N-type dopants, said substrate having a first side and second side which is opposite said first side;

    a light emitting diode portion for emitting light having a first active layer formed over said first side of said substrate and a first clad layer formed on said first active layer, said first clad layer being doped with a different type of dopant from that of said substrate and having a first electrode formed on said clad layer, and a second electrode formed on one of said first and second sides of said substrate; and

    a resistor portion separate from said light emitting diode portion for multistage limitations of current flow to said light emitting diode portion having a second active layer formed on one of said first and second sides of said substrate and a second clad layer doped with a different type of dopant from that of said substrate, and a plurality of resistor electrodes formed on said second clad layer.

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