Electrically conductive, hermetic vias and their use in high temperature chip packages

• US 5,569,958 A
• Filed: 05/26/1994
• Issued: 10/29/1996
• Est. Priority Date: 05/26/1994
• Status: Expired due to Fees

• Current Assignee: CTS Corporation
• Original Assignee: CTS Corporation
• Inventors: Bloom, Terry R.
• Primary Examiner(s): MONIN, DONALD L JR
• Application Number:
  US08/249,813
• Time in Patent Office: 887 Days
• Field of Search: 257/705, 257/774, 257/764, 257/741, 257/698, 257/762, 174/263, 174/265, 174/267, 174/262, 174/261, 174/50.61, 228/124.5
• US Class Current: 257/698
• CPC Class Codes: C04B 2237/125 based on noble metals, e.g. silver
• CPC Class Codes: C04B 2237/127 The active component for bonding being a refractory metal
• CPC Class Codes: C04B 2237/343 Alumina or aluminates
• CPC Class Codes: C04B 2237/365 Silicon carbide
• CPC Class Codes: C04B 2237/366 Aluminium nitride
• CPC Class Codes: C04B 2237/62 Forming laminates or joined articles comprising holes, channels or other types of openings
• CPC Class Codes: C04B 37/006 consisting of metals or metal salts
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49883 the conductive materials containing organic materials or pastes, e.g. for thick films for printed circuits H05K1/092
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H05K 1/092 Dispersed materials, e.g. conductive pastes or inks
• CPC Class Codes: H05K 3/4061 for via connections in inorganic insulating substrates

Abstract

Hermetically sealed chip packages are described which are capable of withstanding elevated temperatures and accompanying temperature fluctuations. The chip packages feature electrically conductive, hermetic vias which provide electrical pathways through generally dielectric ceramic substrates employed in the chip package. Methods of forming such hermetic vias are also disclosed.

Claims

1. An electronic component base comprising:

a ceramic substrate having a first surface and a second surface and defining at least one via hole extending through the thickness of said substrate between said first surface and said second surface;

an electrically conductive fill composition disposed exclusively within said via hole and providing a hermetic seal with said substrate between said first surface and said second surface upon subsequent firing of said electronic component base, said fill composition consisting of from about 90% to about 99.99% of at least one metal selected from the group consisting of gold, silver, and combinations thereof, from about 0.01% to about 10% of at least one active agent based upon the total weight of said metal and said active agent, and an inert firing vehicle which when fired does not produce adverse amounts of carbon residue, wherein said fill composition is deposited in said via hole as a flowable paste to be subsequently fired to provide said hermetic seal.

2. The electronic component base of claim 1, wherein said active agent is selected from the group consisting of titanium, hafnium, zirconium and corresponding hydrides.

3. The electronic component base of claim 1, wherein said inert firing vehicle comprises a nitrogen fireable screening agent.

4. The electronic component base of claim 1, wherein said substrate is formed from a material selected from the group consisting of ceramics and carbides.

5. The electronic component base of claim 4, wherein said substrate is formed from a ceramic material selected from the group consisting of aluminum oxide, silicon nitride and aluminum nitride.

6. The electronic component base of claim 1, wherein said via hole is approximately circular in cross section and has a diameter of from about 5 mils to about 25 mils.

7. An electronic component base comprising:

a ceramic substrate having a first surface and a second surface and defining at least one via hole extending through the thickness of said substrate between said first surface and said second surface;

an electrically conductive fill composition disposed exclusively within said via hole, said fill composition consisting of an effective amount of a metal selected from the group consisting of gold, silver, corresponding alloys thereof, and combinations thereof, at least one active agent, and an organic vehicle, wherein said organic vehicle is an inert firing vehicle and comprises about 9% poly(n-butyl methacrylate iso-butyl methacrylate), about 77% pine oil, and about 14% nonylphenoxy poly(ethyleneoxy) ethanol.

8. The electronic component base of claim 7, wherein said effective amount of said metal is from about 90% to about 99.99% based upon the total weight of said metal and said active agent.

9. The electronic component base of claim 7, wherein said active agent is selected from the group consisting of titanium, hafnium, zirconium and corresponding hydrides.

10. The electronic component base of claim 7, wherein said active agent is in a concentration of from about 0.01% to about 10% based upon the total weight of said metal and said active agent.

11. The electronic component base of claim 7, wherein said organic vehicle comprises a nitrogen fireable screening agent.

12. The electronic component base of claim 7, wherein said via hole has an approximately circular cross section and a diameter of from about 5 mils to about 25 mils.

13. A hermetic chip package adapted for exposure to elevated temperatures without loss of hermeticity, said package comprising:

a dielectric substrate having a first outer surface and a second outer surface and defining at least one passage extending between said first surface and said second surface;

a means for hermetically enclosing a portion of said dielectric substrate; and

an electrically conductive fill composition disposed exclusively within said passage, said fill composition forming a hermetic seal with said dielectric substrate between said first surface and said second surface, said fill composition capable of deforming to accommodate dimensional changes in said dielectric substrate and said fill composition without loss of hermeticity during and subsequent to exposure of said chip package to elevated temperatures, said composition consisting essentially of (i) from about 90% to about 99.99% of at least one metal selected from the group consisting of gold, silver, corresponding alloys thereof, and combinations thereof, (ii) from about 0.01% to about 10% of at least one active agent selected from the group consisting of titanium, hafnium, zirconium, corresponding hydrides, and combinations thereof, and (iii) an inert firing vehicle which when fired does not produce adverse amounts of carbon residue.

14. The chip package of claim 13, wherein said substrate is formed from a material selected from the group consisting of ceramics and carbides.

15. The chip package of claim 14, wherein said substrate is formed from a ceramic material selected from the group consisting of aluminum oxide, silicon nitride and aluminum nitride.

16. The chip package of claim 13, wherein said passage has an approximately circular cross section and a diameter of from about 5 mils to about 25 mils.