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Plasma processing apparatus

  • US 5,571,366 A
  • Filed: 10/20/1994
  • Issued: 11/05/1996
  • Est. Priority Date: 10/20/1993
  • Status: Expired due to Term
First Claim
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1. A plasma processing apparatus comprising:

  • a processing chamber for plasma processing, having an external wall, said chamber containing within said wall an object having a surface to be processed in a plasma;

    induction means for providing a radio frequency induction field within said chamber for generating a plasma within said chamber;

    voltage applying means for applying a radio frequency voltage to said induction means;

    measuring means for measuring a pressure variation and/or a light intensity variation from the plasma in said chamber during generation of the plasma, and outputting a signal corresponding to the variation;

    control means for controlling said radio frequency voltage applying means based on the signal from said measuring means, and controlling said voltage for controlling said plasma within said chamber;

    wherein said induction means has a radio frequency antenna arranged outside said chamber, and an insulating member positioned between said radio frequency antenna and said processing chamber; and

    wherein said antenna has an inner terminal formed at an inner end of said antenna, an outer terminal formed at an outer end of said antenna, and at least one intermediate terminal formed between said terminals, the terminals being respectively connected to said radio frequency voltage applying means such that currents flow between said inner terminal and said intermediate terminal, between said intermediate terminal and said outer terminal, and between said intermediate terminal and said radio frequency voltage applying means, and said control means independently controls the currents.

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