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Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition

  • US 5,571,576 A
  • Filed: 02/10/1995
  • Issued: 11/05/1996
  • Est. Priority Date: 02/10/1995
  • Status: Expired due to Term
First Claim
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1. A method of forming a fluorinated silicon oxide layer on the surface of a substrate using a plasma chemical vapor deposition apparatus which includes a process chamber and a plasma chamber, comprising the steps of:

  • positioning the substrate within said process chamber;

    introducing into said plasma chamber an inert gas and oxygen gas, said inert gas being selected from at least one of the inert gases of the group consisting of argon, neon, krypton or xenon;

    introducing r.f. power into said plasma chamber such that a plasma is created in the plasma chamber, and wherein the stability of the plasma is enhanced by introduction of said inert gas;

    introducing a silicon-containing gas into said process chamber adjacent the surface of said substrate; and

    introducing into one of said chambers a fluorine-containing gas whereby said fluorine gas is available at the surface of said substrate, and said silicon-containing gas and said fluorine-containing gas are excited by said plasma and interact proximate to the surface of said substrate to form a fluorinated silicon oxide layer on the surface of said substrate.

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