Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
First Claim
1. A method of forming a fluorinated silicon oxide layer on the surface of a substrate using a plasma chemical vapor deposition apparatus which includes a process chamber and a plasma chamber, comprising the steps of:
- positioning the substrate within said process chamber;
introducing into said plasma chamber an inert gas and oxygen gas, said inert gas being selected from at least one of the inert gases of the group consisting of argon, neon, krypton or xenon;
introducing r.f. power into said plasma chamber such that a plasma is created in the plasma chamber, and wherein the stability of the plasma is enhanced by introduction of said inert gas;
introducing a silicon-containing gas into said process chamber adjacent the surface of said substrate; and
introducing into one of said chambers a fluorine-containing gas whereby said fluorine gas is available at the surface of said substrate, and said silicon-containing gas and said fluorine-containing gas are excited by said plasma and interact proximate to the surface of said substrate to form a fluorinated silicon oxide layer on the surface of said substrate.
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Abstract
A method of forming a fluorinated silicon oxide dielectric layer by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by the plasma and react proximate a substrate to form a fluorinated silicon oxide layer on the surface of the substrate. The fluorinated layer formed has a dielectric constant which is less than that of a silicon oxide layer.
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Citations
19 Claims
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1. A method of forming a fluorinated silicon oxide layer on the surface of a substrate using a plasma chemical vapor deposition apparatus which includes a process chamber and a plasma chamber, comprising the steps of:
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positioning the substrate within said process chamber; introducing into said plasma chamber an inert gas and oxygen gas, said inert gas being selected from at least one of the inert gases of the group consisting of argon, neon, krypton or xenon; introducing r.f. power into said plasma chamber such that a plasma is created in the plasma chamber, and wherein the stability of the plasma is enhanced by introduction of said inert gas; introducing a silicon-containing gas into said process chamber adjacent the surface of said substrate; and introducing into one of said chambers a fluorine-containing gas whereby said fluorine gas is available at the surface of said substrate, and said silicon-containing gas and said fluorine-containing gas are excited by said plasma and interact proximate to the surface of said substrate to form a fluorinated silicon oxide layer on the surface of said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a fluorinated silicon oxide layer on the surface of a substrate using a plasma chemical vapor deposition apparatus which includes a process chamber and a plasma chamber, comprising the steps of:
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positioning the substrate within said process chamber; introducing into said plasma chamber an inert gas and oxygen gas, said inert gas being selected from at least one of the inert gases of the group consisting of argon, neon, krypton and xenon; introducing r.f. power into said plasma chamber such that a plasma is created in the plasma chamber, said plasma containing an ion density of greater than 1011 ions/cm3 and wherein the stability of the plasma is enhanced by introduction of said inert gas; maintaining said substrate at a temperature of not more than 450°
C.;maintaining said process and plasma chambers at a pressure of not more than 20 mTorr; introducing a silane gas into said process chamber adjacent the surface of said substrate; and introducing into one of said chambers a fluorine-containing gas, whereby said fluorocarbon gas is available at the surface of said substrate, and said silane gas and said fluorine-containing gas are excited by said plasma and interact proximate to the surface of said substrate to form a fluorinated silicon oxide layer on the surface of said substrate. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of forming a fluorinated silicon oxide layer on the surface of a substrate using a plasma chemical vapor deposition apparatus which includes a process chamber and a plasma chamber, comprising the steps of:
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positioning the substrate within said process chamber; introducing into said plasma chamber an inert gas and oxygen gas; introducing r.f. power into said plasma chamber such that a plasma is created in the plasma chamber, said plasma containing an ion density of greater than 1011 ions/cm3 and wherein the stability of the plasma is enhanced by introduction of said inert gas; maintaining said substrate at a temperature of not more than 450°
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maintaining said process and plasma chambers at a pressure of not more than 20 Mtorr;introducing a silane gas into said process chamber adjacent the surface of said substrate; and introducing silicon tetrafluorine gas into one of said chambers, whereby said silicon tetrafluorine gas is available at the surface of said substrate and said silane gas and said silicon tetrafluorine gas are excited by said plasma and interact proximate to the surface of said substrate to form a fluorinated silicon oxide layer on the surface of said substrate. - View Dependent Claims (17)
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18. A method of forming a fluorinated silicon oxide dielectric layer on the surface of a substrate using a plasma chemical vapor deposition apparatus which includes a process chamber and a plasma chamber, comprising the steps of:
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positioning the substrate within said process chamber; introducing into said plasma chamber argon and oxygen gas, said inert gas being selected from at least one of the inert gases of the group consisting of argon, neon, krypton and xenon; introducing r.f. power into said plasma chamber such that a plasma is created in the plasma chamber, said plasma containing an ion density of greater than 1011 ions/cm3 and wherein the stability of the plasma is enhanced by introduction of said inert gas; maintaining said substrate at a temperature of not more than 450°
C.;maintaining said process and plasma chambers at a pressure of not more than 20 Mtorr; introducing a silane gas into said process chamber adjacent the surface of said substrate; and introducing tetrafluoromethane gas into one of said chambers, whereby said tetrafluoromethane gas is available at the surface of said substrate, and said silane gas and said tetrafluoromethane gas are excited by said plasma and interact proximate to the surface of said substrate to form a fluorinated silicon oxide layer on the surface of said substrate. - View Dependent Claims (19)
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Specification