Semiconductor device having at least two thin film transistors

• US 5,572,046 A
• Filed: 12/29/1994
• Issued: 11/05/1996
• Est. Priority Date: 06/30/1993
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takemura, Yasuhiko
• Primary Examiner(s): Loke, Steven H.
• Application Number:
  US08/365,744
• Time in Patent Office: 677 Days
• Field of Search: 257/66, 257/59, 257/72, 257/347, 257/350, 257/351, 257/410, 257/411, 359/57, 359/59
• US Class Current: 257/66
• CPC Class Codes: G09G 2300/0408 Integration of the drivers onto the display substrate
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: Y10S 148/091 Laser beam processing of fets

Abstract

Two kinds of TFTs are fabricated by the same process with a high production yield to manufacture an active-matrix circuit and a peripheral driver circuit on the same substrate. The active-matrix circuit is required to have a high mobility and a high ON/OFF current ratio. The peripheral driver circuit needs a complex interconnection structure. The active-matrix circuit and the peripheral driver circuit comprising the TFTs are fabricated monolithically. In this step, the gate electrodes of the TFTs of the active-matrix circuit is coated with an anodic oxide on their top and side surfaces. The gate electrodes of the TFTs of the peripheral driver circuit is coated with the anodic oxide on only their top surfaces; substantially no anodic oxide is present on the side surfaces.

Claims

1. A semiconductor device comprising:

(a) a first transistor comprising;

a first semiconductor region;

a first gate electrode provided adjacent to said first semiconductor region with a first gate insulating film therebetween; and

a first oxide of a material of said first gate electrode provided on side and top surfaces of said first gate electrode, and

(b) a second transistor comprising;

a second semiconductor region;

a second gate electrode provided adjacent to said second semiconductor region with a second gate insulating film therebetween; and

a second oxide of a material of said second gate electrode provided only on a top surface of said second gate electrode,

wherein substantially no oxide of said material of said second gate electrode is provided on a side surface of said second gate electrode.

2. The device of claim 1 wherein said material of said first gate electrode and said material of said second gate electrode comprise a conductive material.

3. The device of claim 2 wherein said conductive material comprises a metal.

4. The device of claim 2 wherein said conductive material comprises aluminum.

5. The device of claim 1 further comprising an insulating material which is different from said first oxide and said second oxide and is provided in contact with said side surface of said second gate electrode.

6. The device of claim 1 wherein said device is an active-matrix display, a microprocessor, a microcontroller, a microcomputer or a semiconductor memory.

7. A semiconductor device comprising:

(a) a first group of transistors each comprising;

a first semiconductor region;

a first gate electrode provided adjacent to said first semiconductor region with a first gate insulating film therebetween; and

a first oxide of a material of said first gate electrode provided on side and top surfaces of said first gate electrode, and

(b) a second group of transistors each comprising;

a second semiconductor region;

a second gate electrode provided adjacent to said second semiconductor region with a second gate insulating film therebetween, and

a second oxide of a material of said second gate electrode provided on only a top surface of said second gate electrode;

wherein substantially no oxide of said material of said second gate electrode is provided on a side surface of said second gate electrode.

8. The device of claim 7 wherein said material of said first gate electrode and said material of said second gate electrode comprise a conductive material.

9. The device of claim 8 wherein said conductive material comprises a metal.

10. The device of claim 8 wherein said conductive material comprises aluminum.

11. The device of claim 7 further comprising an insulating material which is different from said first oxide and is provided in contact with said side surface of said second gate electrode.

12. The device of claim 7 wherein said device is an active-matrix display, a microprocessor, a microcontroller, a microcomputer or a semiconductor memory.

13. A semiconductor device comprising:

an insulating substrate;

a plurality of transistors provided on the insulating substrate and having gate electrodes and interconnects comprising a conductive material;

an active-matrix portion composed of a first group of the transistors, gate electrodes of the transistors of the first group each having a film comprising an oxide of said conductive material on side and top surfaces thereof; and

a peripheral driver circuit portion composed of a second group of the transistors, a gate electrode of each of the transistors of the second group having a film comprising said oxide of said conductive material only on a top surface of said gate electrode and having substantially no oxide of said conductive material on a side surface of said gate electrode.

14. The device of claim 13 wherein said conductive material comprises a metal.

15. The device of claim 13 wherein said conductive material comprises aluminum.

16. The device of claim 13 further comprising an insulating material which is different from said oxide of said conductive material and is provided in contact with said side surfaces of said gate electrodes of the transistors of the second group.

17. The device of claim 13 wherein said device is an active-matrix display, a microprocessor, a microcontroller, a microcomputer or a semiconductor memory.