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Voltage-driven type semiconductor device

  • US 5,572,048 A
  • Filed: 11/17/1993
  • Issued: 11/05/1996
  • Est. Priority Date: 11/20/1992
  • Status: Expired due to Fees
First Claim
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1. A voltage-driven type semiconductor device comprising:

  • a first device having a linear volt-ampere characteristic, said first device including a first semiconductor region of first conductivity type said first device being provided with a first electrode applied with drive voltage at a first surface thereof, and having a pair of main electrodes to provide a predetermined voltage across the first semiconductor region;

    a second semiconductor region, distinct from the first device, of a second conductivity type located at a position at a distance from said first surface of said first device and for injecting carriers into said first semiconductor region so as to modulate conductivity thereof;

    a second electrode coupled to said second semiconductor region,wherein said second semiconductor region is formed on a plane opposite to said first surface in said first devicewherein said first device portion is comprised of a voltage-driven type transistor, said first semiconductor region is a drain region of said voltage-driven type transistor, said second semiconductor region is a base of a bipolar transistor, and wherein said first and second semiconductor regions have the opposite conductivity type, and are coupled with each other through an emitter region of said bipolar transistor, andwherein a third semiconductor region for connecting a collector region and said emitter region with each other is provided in the base region of said bipolar transistor, and said third semiconductor region has the same conductivity type as that of said emitter.

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