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Hall effect device formed in an epitaxial layer of silicon for sensing magnetic fields parallel to the epitaxial layer

  • US 5,572,058 A
  • Filed: 07/17/1995
  • Issued: 11/05/1996
  • Est. Priority Date: 07/17/1995
  • Status: Expired due to Term
First Claim
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1. An integrated circuit with a vertical Hall element, comprising:

  • a substrate comprising a material of a first conductivity type;

    an epitaxial layer disposed on a first surface of said substrate, said epitaxial layer comprising a material of a second conductivity type;

    a transistor base diffusion within said epitaxial layer, said transistor base diffusion having a depth of a first magnitude, said transistor base diffusion comprising a material of said first conductivity type;

    a transistor emitter diffusion within said epitaxial layer, said transistor emitter diffusion having a depth of a second magnitude, said second magnitude being less than said first magnitude, said transistor emitter diffusion comprising a material of said second conductivity type;

    means for isolating a Hall effect region of said epitaxial layer;

    a position defining diffusion comprising a material of said first conductivity type, said position defining diffusion having first, second, third, fourth and fifth openings formed therein, said position defining diffusion being diffused within said epitaxial layer simultaneously with said transistor base diffusion, said first, second, third, fourth and fifth openings being disposed within said Hall effect region;

    first, second, third, fourth and fifth contact diffusions comprising a material of said second conductivity type and being diffused within said first, second, third, fourth and fifth openings, respectively, within said epitaxial layer simultaneously with said transistor emitter diffusion, said first, second, third, fourth and fifth contact diffusions being disposed within said Hall effect region;

    first means for connecting said third contact diffusion to a first terminal of a power supply circuit;

    second means for connecting said first and fifth contact diffusions to a second terminal of said power supply circuit; and

    third means for connecting said second and fourth contact diffusions to a means for measuring a voltage differential.

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