Article comprising a thin film transistor with low conductivity organic layer
First Claim
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1. An article comprising a thin film transistor comprisinga) a layer of organic semiconductor material;
- b) spaced apart first and second contact means in contact with said layer; and
c) third contact means that are spaced from said first and second contact means and that are adapted for controlling, by means of a voltage applied to the third contact means, a current between the first and second contact means through said layer;
CHARACTERIZED IN THATd) the organic semiconductor material is selected from the group consisting of α
-nT without substituent on the 4- or 5-carbon on the terminal ring, and α
-nT with substituent on the 4- or 5-carbon on the terminal ring, with n being an integer from 4 to 9; and
e) the organic semiconductor material has an electrical conductivity of at most 5×
10-8 S/cm at 20°
C., and furthermore has a charge carrier mobility of at least 10-3 cm2 /V·
s at 20°
C.
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Abstract
Organic thin film transistors having improved properties (e.g., on/off ratio>105 at 20° C.) are disclosed. The improved transistors comprise an organic active layer of low conductivity (<5×10-8 S/cm at 20° C., preferably less than 10-8 or even 10-9 S/cm). A method of producing such materials is disclosed. Rapid thermal annealing was found to have beneficial results. An exemplary and preferred material is α-hexathienylene (α-6T). The improved transistors are expected to find use for, e.g., active liquid crystal displays and for memories.
181 Citations
7 Claims
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1. An article comprising a thin film transistor comprising
a) a layer of organic semiconductor material; -
b) spaced apart first and second contact means in contact with said layer; and c) third contact means that are spaced from said first and second contact means and that are adapted for controlling, by means of a voltage applied to the third contact means, a current between the first and second contact means through said layer;
CHARACTERIZED IN THATd) the organic semiconductor material is selected from the group consisting of α
-nT without substituent on the 4- or 5-carbon on the terminal ring, and α
-nT with substituent on the 4- or 5-carbon on the terminal ring, with n being an integer from 4 to 9; ande) the organic semiconductor material has an electrical conductivity of at most 5×
10-8 S/cm at 20°
C., and furthermore has a charge carrier mobility of at least 10-3 cm2 /V·
s at 20°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Current AssigneeBell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
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Original AssigneeLucent Technologies, Inc. (Nokia Corporation)
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InventorsKatz, Howard E., Torsi, Luisa, Dodabalapur, Ananth
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Primary Examiner(s)SAADAT, MAHSHID D
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Application NumberUS08/353,032Time in Patent Office704 DaysField of Search257/40, 257/289, 257/410, 257/347, 257/642US Class Current257/40CPC Class CodesB82Y 10/00 Nanotechnology for informat...G11C 13/0014 comprising cells based on o...H10K 10/464 Lateral top-gate IGFETs com...H10K 10/466 Lateral bottom-gate IGFETs ...H10K 85/113 Heteroaromatic compounds co...H10K 85/655 comprising only sulfur as h...
