Semiconductor device having vertical conduction transistors and cylindrical cell gates

• US 5,574,299 A
• Filed: 06/29/1995
• Issued: 11/12/1996
• Est. Priority Date: 03/28/1994
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Hyoung-sub
• Primary Examiner(s): Brown, Peter Toby
• Assistant Examiner(s): Weiss, Howard
• Application Number:
  US08/442,712
• Time in Patent Office: 502 Days
• Field of Search: 257/296, 257/302, 257/306, 257/309, 257/311, 257/328, 257/510, 257/513, 257/514, 257/515, 257/519, 257/905, 257/908
• US Class Current: 257/296
• CPC Class Codes: H10B 12/34 the transistor being at least partially in a trench in the substrate

Abstract

A semiconductor device, e.g., a DRAM, having vertical conduction transistors and cylindrical cell gates, which includes a plurality of spaced-apart trench isolation regions formed in a semiconductor substrate, a plurality of bit lines formed on the semiconductor substrate, a silicon pillar formed on each bit line, a gate insulating layer and gate line formed on each silicon pillar in surrounding relationship thereto, a planarizing layer formed in recesses in the gate lines, an insulating layer formed on the upper surfaces of the gate line and planarizing layer, a plurality of contact holes provided in vertically aligned portions of the insulating layer, the gate line, and the gate insulating layer located above respective ones of the silicon pillars, and, a storage node of a capacitor formed with the contact holes and adjacent surface portions of the insulating layer, in contact with the source region of respective ones of the silicon pillars. Each of the silicon pillars includes vertically stacked layers which serve as respective drain, channel, and source regions of a transistor.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate;

a plurality of spaced-apart trench isolation regions formed in said semiconductor substrate, said trench isolation regions defining active regions therebetween;

a plurality of bit lines formed on said semiconductor substrate;

a silicon pillar formed on each said bit line, each said silicon pillar having vertically stacked layers which serve as drain, channel, and source regions of a transistor;

a gate insulating layer formed on each said silicon pillar, in surrounding relationship thereto;

a gate line formed on said gate insulating layers, in surrounding relationship to respective ones of said silicon pillars, said gate line having recesses formed therein between adjacent ones of said silicon pillars;

a planarizing layer formed in said recesses in said gate line, said planarizing layer having an upper surface co-planar with an upper surface of said gate line;

an insulating layer formed on said upper surface of said gate line and said upper surface of said planarizing layer; and

,

a plurality of contact holes provided in vertically aligned portions of said insulating layer, said gate line, and said gate insulating layer located above respective ones of said silicon pillars to thereby expose said source region of respective ones of said transistors.

2. The semiconductor device as set forth in claim 1, further comprising a storage node of a capacitor formed within said contact holes and adjacent surface portions of said insulating layer, in contact with said source region of respective ones of said transistors.

3. The semiconductor device as set forth in claim 1, wherein said bit lines are comprised of an epitaxial semiconductor layer formed on an upper surface of said semiconductor substrate.

4. The semiconductor device as set forth in claim 1, wherein each of said vertically stacked layers of each of said silicon pillars is comprised of an epitaxial semiconductor layer.

5. A semiconductor device as set forth in claim 2, further comprising an n+ type plug formed in a surface portion of said source region of each of said transistors, a respective one of said storage nodes being in contact therewith.

6. The semiconductor device as set forth in claim 1, wherein said gate line extends down to the depth of said vertically stacked layer of each said silicon pillar which serves as said drain region, and each of said trench isolation regions extends up to said depth of said vertically stacked layer of a respective one of said silicon pillar which serves as said drain region.

7. A semiconductor device, comprising:

a semiconductor substrate;

a plurality of spaced-apart first trenches formed in said semiconductor substrate, said first trenches defining active regions therebetween;

a plurality of semiconductor pillars formed in said active regions, each said semiconductor pillar being comprised of vertically stacked regions formed in said semiconductor substrate, said vertically stacked regions serving respectively as drain, channel, and source regions of a transistor;

a first trench insulating layer filling each of said first trenches up to said drain region of respective ones of said semiconductor pillars, to thereby provide a plurality of spaced-apart trench isolation regions;

a plurality of second trenches formed in a central portion of respective ones of said active regions, each said second trench extending down to said drain region of a respective one of said semiconductor pillars;

a plurality of bit lines formed on a bottom surface of respective ones of said second trenches;

a second trench insulating layer filling each of said second trenches at least up to said source region of a respective one of said semiconductor pillars;

a gate insulating layer formed on an upper surface of each said semiconductor pillar and on adjacent sidewalls of said first trenches surrounding respective ones of said semiconductor pillar, to thereby provide a gate insulating layer in surrounding relationship to each said semiconductor pillar;

a gate line formed on said gate insulating layers, in surrounding relationship to respective ones of said semiconductor pillars, said gate line having recesses formed therein between adjacent ones of said semiconductor pillars;

a planarizing layer formed in said recesses of said gate line, said planarizing layer having an upper surface co-planar with an upper surface of said gate line;

an insulating layer formed on said upper surface of said gate line and said upper surface of said planarizing layer; and

,

a plurality of contact holes provided in vertically aligned portions of said insulating layer, said gate line, and said gate insulating layer located above respective ones of said semiconductor pillars, to thereby expose portions of said source region adjacent opposite sides of respective ones of said second trenches.

8. The semiconductor device as set forth in claim 7, further comprising a storage node of a capacitor formed within each of said contact holes and adjacent surface portions of said insulating layer, in contact with said exposed portions of said source region of respective ones of said transistors.

9. The semiconductor device as set forth in claim 8, further comprising an n+ type plug formed in said exposed portions of said source region of respective ones of said transistors, a respective one of said storage nodes being in contact therewith.

10. The semiconductor device as set forth in claim 9, wherein said second trench insulating layer is comprised of first and second insulating layers.

11. The semiconductor device as set forth in claim 9, wherein said insulating layer is comprised of first and second layers.