Self-aligned buried channel/junction stacked gate flash memory cell

• US 5,574,685 A
• Filed: 09/01/1994
• Issued: 11/12/1996
• Est. Priority Date: 09/01/1994
• Status: Expired due to Term

• Current Assignee: Cypress Semiconductor Corporation (Infineon Technologies AG)
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Hsu, James
• Primary Examiner(s): CLAWSON JR, JOSEPH
• Application Number:
  US08/299,876
• Time in Patent Office: 803 Days
• Field of Search: 365/185.01, 365/185.06, 365/185.11, 365/185.33, 365/185.18, 257/321, 257/316, 257/339
• US Class Current: 365/185.18
• CPC Class Codes: H01L 29/66825 with a floating gate H01L29/6684 takes precedence
• CPC Class Codes: H01L 29/7885 Hot carrier injection from the channel

Abstract

An improved one-transistor flash EEPROM cell structure and a method for making the same is provided so that the effective channel length dimension is independent of the critical dimensions of the stacked gate structure. The cell structure (210) includes an n^- buried channel/junction region (216) which is implanted in a substrate (212) before formation of a tunnel oxide (226) and a stacked gate structure (234). After the formation of the stacked gate structure, a p-type drain region (222) is implanted with a large tilt angle in the substrate. Thereafter, n⁺ source and n⁺ drain regions (218, 224) are implanted in the substrate so as to be self-aligned to the stacked gate structure. The cell structure of the present invention facilitates scalability to small size and is useful in high density application.

Claims

1. A one-transistor memory cell structure comprising:

a substrate (212);

an n^- buried channel/junction region (216) disposed in said substrate;

an n⁺ -type source region (218) disposed in said substrate and on a first side of said buried channel/junction region defining a source side;

a drain structure (220) disposed in said substrate and on a second side of said n^- buried channel/junction region defining a drain side;

said drain structure including a first p-type drain region (222) and a second n⁺ -type drain region (224) disposed in said first p-type drain region;

said p-type drain region (222) being formed by implanting on the drain side with a large tilt angle with respect to a line disposed perpendicularly to said stacked gate structure so as to cause the channel length of the memory cell to be set on the drain side and to be made independent of critical dimensions of said stacked gate structure;

a tunnel oxide (226) disposed on said substrate;

a stacked gate structure (234) disposed on said tunnel oxide and being formed over said n-channel/junction region (216);

said stacked gate structure (234) including a floating gate (228), an inter-gate dielectric (230) disposed on said floating gate, and a control gate (232) disposed on said inter-gate dielectric;

said tunnel oxide (226) overlying a portion (219) of said n⁺ -type source region (218), said first p-type drain region (222), and a portion (225) of said second n⁺ drain region (224);

means for applying a moderately high voltage (V_D) to said second n⁺ -type drain region (224) and a relatively high voltage (V_G) to said control gate (232) so as to cause hot electron injection into said floating gate (228) through said tunnel oxide (226) from said drain structure during programming; and

means for applying a relatively high voltage (V_S) to said source region (218) and a ground potential to said control gate (232) so as to cause Fowler-Nordheim electron tunneling from said floating gate (228) through said tunnel oxide (226) to said source region (218) during an erase operation.

2. A one-transistor memory cell structure as claimed in claim 1, wherein said n^- buried channel/junction region (216) has a depth in the range of 1000 to 2000 Å

which extends below the surface of said substrate.

3. A one-transistor memory cell structure as claimed in claim 2, wherein said n^- buried channel/junction region (216) is formed by implanting phosphorous ions with a density in the range of 1×

10¹³ to 3×

10¹⁴ ions/cm².

4. A one-transistor memory cell structure as claimed in claim 1, wherein said p-type drain region (222) is formed by implanting boron ions with a density of 5×

10¹³ to 8×

10¹⁴ ions/cm².

5. A one-transistor memory cell structure as claimed in claim 1, wherein said tunnel oxide (226) has a thickness of less than approximately 100 Å

.