Semiconductor diode laser having improved performance and method of manufacturing same

• US 5,574,743 A
• Filed: 03/21/1995
• Issued: 11/12/1996
• Est. Priority Date: 03/22/1994
• Status: Expired due to Fees

• Current Assignee: JDS Uniphase Corporation (Lumentum Holdings Inc.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: van der Poel, Carolus J., Schemmann, Marcel F. C., Acket, Gerard A.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/407,931
• Time in Patent Office: 602 Days
• Field of Search: 372/45, 372/46
• US Class Current: 372/46.01
• CPC Class Codes: H01S 5/10 Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region H01S5/20 takes precedence
• CPC Class Codes: H01S 5/1039 Details on the cavity length
• CPC Class Codes: H01S 5/204 Strongly index guided structures
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/223 Buried stripe structure H01S5/227 takes precedence
• CPC Class Codes: H01S 5/2231 with inner confining structure only between the active layer and the upper electrode

Abstract

Semiconductor diode lasers are used inter alia in optical disc systems, laser printers, bar code readers, and glass fibre communication systems. Lasers having a so-called (weakly) index-guided structure are very suitable for many applications inter alia because they can be manufactured comparatively simply and reliably. A disadvantage of the known (weakly) index-guided laser is that the so-called P-I (=optical power-current) characteristic thereof exhibits a kink. Such a kink limits the use of the laser to a relatively low optical power. According to the invention, such a (weakly) index-guided laser has a resonance cavity with a length for which the optical power at which a kink occurs in the P-I characteristic is a maximum. It was a surprise to find that the occurrence of a kink in the P-I curve of such a (weakly) index-guided laser depends on the length of the resonance cavity. Very surprising is the appearance of a maximum value in this kink power as a function of the length of the resonance cavity. Equally surprising is the occurrence of a series of such maxima, which are substantially equally high, and which are formed by the crests of a sawtooth curve with a very steep flank at the rising edge to each maximum. As a result, the laser length may be optimized not only in relation to the occurrence of kinks in the P-I characteristic but also in relation to other properties. The invention also relates to a method of manufacturing a laser according to the invention, which preferably includes a ridge waveguide structure.

Claims

1. A semiconductor diode laser of the index-guided type, comprising a semiconductor body with a semiconductor substrate of a first conductivity type on which a semiconductor layer structure is disposed which comprises at least, in that order, a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type opposed to the first, and comprising a pn junction which can generate coherent electromagnetic radiation, given a sufficient current strength in the forward direction, in a strip-shaped active region situated within a resonance cavity which is limited by surfaces extending substantially perpendicular to the active region, the semiconductor layer structure being provided with means for forming a step in the effective refractive index on either side of the active region, and the first and the second cladding layer being provided with further means for forming an electrical connection, characterized in that the resonance cavity has at least a length for which the optical power at which the derivative of the optical power as a function of the current through the pn junction changes is a maximum.

2. A semiconductor diode laser as claimed in claim 1, characterized in that the length of the resonance cavity forms part of a set of lengths which lie at substantially equal distances from one another, for each of the lengths forming part of the set the optical power at which the derivative of the optical power as a function of the current through the pn junction changes being a maximum.

3. A semiconductor diode laser as claimed in claim 1, characterized in that the resonance cavity length lies between a first length for which the optical power at which the derivative of the optical power as a function of the current through the pn junction changes is a maximum, and a second length, greater than the first, for which said power is approximately 50% of its maximum value.

4. A semiconductor diode laser as claimed in claim 1, characterized in that the resonance cavity length lies between a first length for which the optical power at which the derivative of the optical power as a function of the current through the pn junction changes is a maximum, and a second length, greater than the first, for which said power is approximately 80% of its maximum value.

5. A semiconductor diode laser as claimed in claim 1, characterized in that the resonance cavity length lies between a first length for which the optical power at which the derivative of the optical power as a function of the current through the pn junction changes is a maximum and a second length which is approximately 20 μ

m greater than said first length.

6. A semiconductor diode laser as claimed in claim 2, characterized in that a length forming part of said set is equal to the smallest length for which the optical power at which the derivative of the optical power as a function of the current through the pn junction changes is a maximum, plus half the oscillation period between the fundamental and the first-order lateral modes of the electromagnetic radiation generated in the active region multiplied by an integer.

7. A semiconductor diode laser as claimed in claim 6, characterized in that the oscillation period is equal to 2π

/(β

₀ -β

₁) and to λ

/2*Δ

n₀₁, in which β

₀ and β

₁ are the propagation constants of the fundamental and the first-order lateral modes, respectively, of the electromagnetic radiation generated in the active region, λ

is the wavelength of the electromagnetic radiation generated in the active region, and Δ

n₀₁ is the difference in effective refractive index for the fundamental and the first-order lateral modes of the electromagnetic radiation generated in the active region.

8. A semiconductor diode laser as claimed in claim 1, characterized in that the laser has a structure which is weakly index-guided and whose V parameter lies between approximately π

/2 and approximately π

, in which V=(2*π

*w/λ

)*√

(n₂² -n₁²), in which w is the width of the active region, λ

the wavelength of the laser emission, n₂ the effective refractive index at the area of the active region, and n₁ the effective refractive index on either side of the active region.

9. A semiconductor diode laser as claimed in claim 1, characterized in that said means comprise the semiconductor diode laser having a ridge waveguide structure.

10. A semiconductor diode laser as claimed in claim 9, characterized in that said means comprise the ridge waveguide structure being of the buried type and in that the layer by which the ridge waveguide is buried has a bandgap such that substantially no absorption of the generated electromagnetic radiation takes place.

11. A semiconductor diode laser as claimed in claim 1, characterized in that the surfaces bounding the resonance cavity are provided with a coating.

12. A semiconductor diode laser as in claim 1, wherein said laser is a pulsed mode laser.

13. A method of manufacturing a semiconductor diode laser of the index-guided type, comprising forming a semiconductor body by providing, on a semiconductor substrate of a first conductivity type, a semiconductor layer structure having at least, in that order, a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type opposed to the first, and forming a pn junction, a strip-shaped active region, and a surrounding resonance cavity bounded by surfaces which are substantially perpendicular to the active region, providing the semiconductor layer structure with means for forming a step in the effective refractive index on either side of the active region, providing first and second cladding layers with means for forming an electrical connection, and choosing a length for the resonance cavity for which the optical power at which the derivative of the optical power as a function of the current through the pn junction changes is a maximum.