Manufacturing method of semiconductor device

• US 5,576,221 A
• Filed: 12/19/1994
• Issued: 11/19/1996
• Est. Priority Date: 12/20/1993
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Tashiro, Tsutomu, Takemura, Hisashi
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US08/358,455
• Time in Patent Office: 701 Days
• Field of Search: 437/106, 437/131, 437/2, 437/3, 257/15, 257/19, 257/21
• US Class Current: 438/57
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 27/144 Devices controlled by radiation
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/035254 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices

Abstract

To selectively grow a P type silicon layer and a Si/Ge_x Si_1-x superlattice layer under low temperature conditions in the area encircled with a groove, at least the side walls of which consist of silicon oxide film, which is formed in the silicon substrate. Thereby, the leak at the side of the superlattice layer can be reduced. Furthermore, by burying a metal film in the groove, the loss of light at the side of the superlattice layer can be suppressed to the minimum. Thus a light receiver having silicon/germanium silicon-mixed-crystal layer is stably formed in a silicon semiconductor substrate and optical absorption efficiency can be improved.

Claims

1. A manufacturing method of a semiconductor device comprising the steps of;

forming on a first conductivity type silicon substrate, a second conductivity type buried layer and a second conductivity type silicon layer;

forming a first groove whose side walls are covered with a silicon oxide film in said second conductivity type silicon layer;

removing said second conductivity type silicon layer which is bounded by said groove down to predetermined depth;

selectively forming a first silicon layer of first conductivity type on said second conductivity type silicon layer or said second conductivity type buried layer which is exposed;

forming a Si/Ge_x Si_1-x layer through alternate growth of a silicon layer and a Ge_x Si_1-x layer on said first silicon layer of first conductivity type; and

forming a second silicon layer of first conductivity type on said Si/Ge_x Si_1-x layer.

2. The manufacturing method of a semiconductor device according to claim 1, further comprising the steps of:

forming an opening which is formed deeper than said Si/Ge_x Si_1-x layer and on at least one of the directions toward the side walls of said Si/Ge_x Si_1-x layer; and

burying a metal layer in said opening.

3. The manufacturing method of a semiconductor device according to claim 2 further comprising the steps of;

forming a second groove in the silicon substrate located transversely adjacent to said Si/Ge_x Si_1-x layer to a depth of 1/2of the diameter of an optical fiber; and

fixing the optical fiber in said groove.

4. The manufacturing method of a semiconductor device according to claim 3, further comprising the steps of:

fixing said optical fiber in a way that its center line is aligned with said Si/Ge_x Si_1-x layer.

5. The manufacturing method of a semiconductor device according to claim 1, wherein said Si/Ge_x Si_1-x layer grows selectively at temperatures less than 800°

C.

6. The manufacturing method of a semiconductor device according to claim 1 further comprising the steps of;

forming a second groove in the silicon substrate located transversely adjacent to said Si/Ge_x Si_1-x layer to a depth of 1/2of the diameter of an optical fiber; and

fixing the optical fiber in said groove.

7. The manufacturing method of semiconductor device according to claim 6, further comprising the steps of:

fixing said optical fiber in a way that its center line is aligned with said Si/Ge_x Si_1-x layer.

8. The manufacturing method of a semiconductor device according to claim 6, wherein said Si/Ge_x Si_1-x layer grows selectively at temperatures less than 800°

C.

9. The manufacturing method of a semiconductor device according to claim 1, further comprising the steps of:

forming a V shaped groove in the silicon substrate located transversely adjacent to said Si/Ge_x Si_1-x layer; and

fixing an optical fiber with its outlet end directed toward said V shaped groove.

10. The manufacturing method of a semiconductor device according to claim 2, further comprising the steps of:

forming a V shaped groove in the silicon substrate located transversely adjacent to said Si/Ge_x Si_1-x layer; and

fixing an optical fiber with its outlet end directed toward said V shaped groove.

11. A manufacturing method of a semiconductor device comprising the steps of:

forming a semiconductor device for an analog digital signal converter comprising a bipolar type transistor in a silicon substrate; and

subsequently forming an Si/Ge_x Si_1-x layer as an optical receiver, through alternative growth of a silicon layer and a Ge_x Si_1-3 layer on only selected regions of said silicon substrate;

wherein said step of forming said Si/Ge_x Si_1-x layer comprises the steps of;

forming on a first conductivity type silicon substrate, a second conductivity type buried layer and a second conductivity type silicon layer;

forming a first groove whose side walls are covered with a silicon oxide film in said second conductivity type silicon layer said first groove encircling an area of said second conductivity type silicon layer;

removing said second conductivity type silicon layer within the area encircled with said first groove to a predetermined depth;

selectively forming a first silicon layer of first conductivity type on said second conductivity type silicon layer or said second conductivity type buried layer which is exposed;

forming Si/Ge_x Si_1-x layer formed through alternate growth of a silicon layer and a Ge_x Si_1-x layer on said first silicon layer of first conductivity type; and

forming a second silicon layer of first conductivity type on said Si/Ge_x Si_1-x layer.

12. The manufacturing method of a semiconductor device according to claim 11, wherein said Si/Ge_x Si_1-x layer grows selectively at temperatures less than 800°

C.