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Method of making vertical current flow field effect transistor

  • US 5,576,245 A
  • Filed: 11/18/1992
  • Issued: 11/19/1996
  • Est. Priority Date: 10/08/1987
  • Status: Expired due to Term
First Claim
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1. A method for making a transistor comprising the steps of:

  • providing a first semiconductor region of a first conductivity type;

    providing a second semiconductor region of said first conductivity type on said first region, said second region having a first portion having a dopant concentration less than the dopant concentration of said first region;

    forming a first groove in said second region;

    extending said first groove to at least said first region;

    forming a first insulator on the bottom but not on the sidewalls of said first groove;

    forming a second insulator over the bottom and sidewalls of said first groove; and

    forming a first conductor in said groove.

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