Compensated gain-controlled amplifier having a wide linear dynamic range

• US 5,576,662 A
• Filed: 10/24/1995
• Issued: 11/19/1996
• Est. Priority Date: 06/14/1993
• Status: Expired due to Fees

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Price, J. Michael, Wheatley, Charles E. III, White, Katherine W.
• Primary Examiner(s): Mottola, Steven
• Application Number:
  US08/547,340
• Time in Patent Office: 392 Days
• Field of Search: 330/277, 330/278, 330/279, 330/285, 330/289, 330/302, 330/310
• US Class Current: 330/277
• CPC Class Codes: H03F 1/301 in MOSFET amplifiers H03F1/303, H03F1/305, H03F1/308 take precedence
• CPC Class Codes: H03G 1/04 Modifications of control circuit to reduce distortion caused by control modifications to reduce influence of variations of internal impedance of amplifying elements caused by control H03F1/08

Abstract

A high dynamic range linear automatic gain control (AGC) circuit that has independent means for temperature compensation. The temperature compensation circuit of this invention can be used in a closed-loop AGC circuit such as is required in a transceiver for compensating the gains of receiver and transmitter amplifiers to ensure that both track closely over ranges of temperature, frequency and load impedance. The temperature compensation signal is coupled to one of the two gates in a field effect transistor (FET) amplifier to maintain a constant gain function over ranges of temperature, frequency and load impedance. Thermal compensation for the transmitter amplifier is derived from the thermal compensation signal for the receiver amplifier.

Claims

1. An amplifier circuit for amplifying a received signal, the amplifier circuit comprising:

a gain setting circuit for generating a gain compensation signal which remains constant as a function of temperature;

a temperature sensing circuit for generating a temperature compensation signal which remains constant as a function of said gain compensation signal, and

a dual gate field effect transistor circuit having a first gate coupled to said temperature sensing circuit and coupled to said receive signal and a second gate coupled to said gain setting circuit, the field effect transistor generating an amplified signal from the received signal in response to the temperature compensation signal and the gain compensation signal.

2. An amplifier circuit providing temperature independent gain to a modulated signal comprising:

a gain control circuit generating independent of a current temperature a gain control signal indicative of a desired level of gain;

a temperature control circuit generating a temperature compensation signal indicative of said current temperature wherein said temperature compensation signal is independent of said desired level of gain; and

a dual gate field effect transistor circuit having a first gate receiving said temperature compensation signal and said modulated signal and a second gate receiving said gain control signal, said dual gate field effect transistor having a drain producing an amplified version of said modulated signal having an amplification dependent on the value of said gain control signal and independent of said current temperature.

3. The amplifier circuit of claim 2 further comprising a second dual gate field effect transistor circuit having a first gate receiving said temperature compensation signal and said amplified version of said modulated signal and a second gate receiving said gain control signal, said second dual gate field effect transistor having a drain producing an amplified version of said amplified version of said modulated signal having an amplification dependent on the value of said gain control signal and independent of said current temperature.

4. The amplifier circuit of claim 2 wherein said desired gain is a linear function of said value of said gain control signal.

5. The amplifier circuit of claim 2 wherein said gain control circuit comprises an operational amplifier configured to act as an integrator having an noninverting input receiving a reference signal indicative of a desired amplitude level of said amplified version of said modulated signal, and having an inverting input receiving a signal indicative of an actual amplitude level of said amplified version of said modulated signal.

6. The amplifier circuit of claim 2 comprising:

a second gain control circuit generating independent of a current temperature a second gain control signal indicative of a second desired level of gain; and

a second dual gate field effect transistor circuit having a first gate receiving said temperature compensation signal and a second modulated signal and a second gate receiving said second gain control signal, said dual gate field effect transistor having a drain producing an amplified version of said second modulated signal having an amplification dependent on the value of said second gain control signal and independent of said current temperature.

7. The amplifier circuit of claim 6 wherein said second gain control circuit receives said gain control signal.

8. The amplifier circuit of claim 7 wherein said gain control signal is indicative of an absolute amplitude level of said modulated signal.

9. The amplifier circuit of claim 2 wherein said gain control circuit comprises an operation amplifier having a nonlinear feed back element.

10. The amplifier circuit of claim 6 wherein said modulated signal is received from an antenna.

11. The amplifier circuit of claim 10 wherein said amplified version of said modulated signal has an amplitude that varies over a smaller dynamic range than said modulated signal.

12. The amplifier circuit of claim 11 wherein said amplified version of said second modulated signal has an amplitude that varies over a larger dynamic range than said second modulated signal.