Optical and magnetooptical recording medium having a low thermal conductivity dielectric layer
First Claim
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1. An optical recording medium comprising a transparent substrate, a first dielectric layer, a recording layer, a second dielectric layer and a reflecting layer stacked in this order, wherein said first dielectric layer is 40 to 140 nm thick and has a thermal conduction coefficient of 0.03 to 0.1 μ
- W/K, said second dielectric layer is 10 to 60 nm thick and has a thermal conduction coefficient of 0.01 to 0.03 μ
W/K and said reflecting layer has a thermal conduction coefficient of 4 to 12 μ
W/K, where the thermal conduction coefficient is defined as a product of multiplying the thermal conductivity by the layer thickness, and wherein said reflecting layer comprises an alloy layer containing at least one element selected from the group consisting of Al, Au, Ag and Cu combined with up to 10 atom % of at least one element selected from the group consisting of Ti, Cr, Ta, Co, Ni, Mg and Si and said reflecting layer has a thermal conductivity of not less than 80 W/mK.
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Abstract
An optical recording medium comprises a transparent substrate, a first dielectric layer, a recording layer, a second dielectric layer and a reflecting layer stacked in this order, wherein said first dielectric layer has a thermal conduction coefficient of 0.03 to 0.1 μW/K, said second dielectric layer has a thermal conduction coefficient of 0.01 to 0.03 μW/K, and said reflecting layer has a thermal conduction coefficient of 4 to 12 μW/K, where the thermal conduction coefficient is defined as a product of the thermal conductivity and the layer thickness. The first and/or second dielectric layers may be of an amorphous metal nitride comprising Al and Si and optionally C and having bonds with hydrogen.
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Citations
27 Claims
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1. An optical recording medium comprising a transparent substrate, a first dielectric layer, a recording layer, a second dielectric layer and a reflecting layer stacked in this order, wherein said first dielectric layer is 40 to 140 nm thick and has a thermal conduction coefficient of 0.03 to 0.1 μ
- W/K, said second dielectric layer is 10 to 60 nm thick and has a thermal conduction coefficient of 0.01 to 0.03 μ
W/K and said reflecting layer has a thermal conduction coefficient of 4 to 12 μ
W/K, where the thermal conduction coefficient is defined as a product of multiplying the thermal conductivity by the layer thickness, and wherein said reflecting layer comprises an alloy layer containing at least one element selected from the group consisting of Al, Au, Ag and Cu combined with up to 10 atom % of at least one element selected from the group consisting of Ti, Cr, Ta, Co, Ni, Mg and Si and said reflecting layer has a thermal conductivity of not less than 80 W/mK. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
- W/K, said second dielectric layer is 10 to 60 nm thick and has a thermal conduction coefficient of 0.01 to 0.03 μ
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15. An optical recording medium comprising a transparent substrate, a first dielectric layer, a recording layer, a second dielectric layer and a reflecting layer stacked in this order, wherein said first dielectric layer is 40 to 140 nm thick and has a thermal conduction coefficient of 0.03 to 0.1 μ
- W/K, said second dielectric layer is 10 to 60 nm thick and has a thermal conduction coefficient of 0.01 to 0.03 μ
W/K and said reflecting layer has a thermal conduction coefficient of 4 to 12 μ
W/K, where the thermal conduction coefficient is defined as a product of multiplying the thermal conductivity by the layer thickness, and wherein said reflecting layer comprises a multi-layer containing at least one element selected from the group consisting of Al, Au, Ag and Cu combined with up to 10 atom % of at least one element selected from the group consisting of Ti, Cr, Ta, Co, Ni, Mg and Si and said reflecting layer has a thermal conductivity of not less than 80 W/mK.
- W/K, said second dielectric layer is 10 to 60 nm thick and has a thermal conduction coefficient of 0.01 to 0.03 μ
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16. A magneto-optical recording medium comprising a transparent substrate, a first dielectric layer 40 to 140 nm thick, a recording layer, a second dielectric layer 10 to 60 nm thick and a reflecting layer stacked in this order, wherein said first dielectric layer has a thermal conduction coefficient of 0.03 to 0.1 μ
- W/K, said second dielectric layer has a thermal conduction coefficient of 0.01 to 0.03 μ
W/K, where the thermal conduction coefficient is defined as a product of multiplying the thermal conductivity by the layer thickness and wherein said first and said second dielectric layers are made of one of an amorphous metal nitride comprising Al and Si and having bonds with hydrogen, an amorphous metal nitride comprising Al, Si and C and having bonds with hydrogen, and an amorphous metal nitride comprising Al, Si and C, and wherein said reflecting layer comprises an alloy layer or a multi-layer containing at least one element selected from the group consisting of Al, Au, Ag and Cu combined with up to 10 atom % of at least one element selected from the group consisting of Ti, Cr, Ta, Co, Ni, Mg and Si and wherein said reflecting layer has a thermal conductivity of not less than 80 W/mK. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
- W/K, said second dielectric layer has a thermal conduction coefficient of 0.01 to 0.03 μ
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Current AssigneeTeijin Limited
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Original AssigneeTeijin Limited
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InventorsHara, Hiroshi, Nakatani, Kenji, Ishimaru, Junichi, Horiguchi, Toru
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Primary Examiner(s)Neyzari, Ali
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Application NumberUS08/451,156Time in Patent Office543 DaysField of Search369/13, 369/275.2, 369/288, 369/284, 369/275.1, 369/275.3, 360/59, 360/114, 428/694 SC, 428/694 DE, 428/694 RE, 428/694 RL, 428/694 MM, 428/696 ISUS Class Current369/275.2CPC Class CodesG11B 11/10584 characterised by the form, ...G11B 11/10586 characterised by the select...
