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Static memory long write test

  • US 5,577,051 A
  • Filed: 12/22/1993
  • Issued: 11/19/1996
  • Est. Priority Date: 12/22/1993
  • Status: Expired due to Term
First Claim
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1. A method for performing a long write test on a static memory, comprising the steps of:

  • writing a test data pattern to a plurality of memory cells, having a data contents, of a static memory, wherein each memory cell, having at least one wordline, is connected to a bitline true and a bitline complement;

    turning off the wordline of each .memory cell of the plurality of memory cells during the long write test;

    pulling both the bitline true and bitline complement connected to each memory cell of the plurality of memory cells down to a low logic level during the long write test;

    exiting the long write test; and

    reading the data contents of the plurality of memory cells to determine which of the plurality of memory cells contain corrupted data.

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