Integrated-circuit optical network unit

• US 5,577,138 A
• Filed: 08/17/1995
• Issued: 11/19/1996
• Est. Priority Date: 08/17/1995
• Status: Expired due to Term

• Current Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Dentai, Andrew G., Chandrasekhar, S.
• Primary Examiner(s): Healy, Brian
• Application Number:
  US08/516,472
• Time in Patent Office: 460 Days
• Field of Search: 385/14, 385/15, 385/24, 385/27, 385/31, 385/39, 385/49, 385/50, 385/124, 385/130, 385/131, 385/1, 385/2, 385/4, 385/8, 385/40, 359/154, 359/173, 359/245, 359/333, 359/341
• US Class Current: 385/14
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/4246 Bidirectionally operating package structures

Abstract

An optical network unit designed to be connected to incoming and outgoing fibers at a customer location is made in integrated-circuit form. One portion of the integrated circuit includes a thin-film waveguiding layer and functions as an optical splitter, a photodetector and a modulator. Another portion of the circuit serves as an amplifier..

Claims

1. An optical network unit comprising

a multi-layered integrated-circuit structure including a portion having a longitudinally extending thin-film waveguiding layer having input and output faces,

photodetecting and optical-signal-splitting means including a first set of layers of said structure disposed adjacent to an input section of said waveguiding layer for absorbing a portion of any optical signal propagating in said waveguiding layer and generating an electrical signal in response thereto while allowing the remaining portion of any optical signal to continue to propagate in said waveguiding layer,

modulator means including a second set of layers of said structure disposed adjacent to an output section of said waveguiding layer for applying a transverse electric field to said waveguiding layer,

means extending transversely through the layers of said structure for providing electrical isolation between said photodetecting and optical-signal-splitting means and said modulator means,

input means for applying an input optical signal to the input face of said waveguiding layer,

and output means for abstracting output optical signals from the output face of said waveguiding layer.

2. A unit as in claim 1 wherein said integrated-circuit structure includes a second portion spaced-apart from said first-mentioned portion and including additional layers comprising an amplifier.

3. A unit as in claim 2 further including means electrically connecting one of the first set of layers of said photodetecting and optical-signal-splitting means to one of the additional layers of said amplifier.

4. A unit as in claim 3 further including means connected to one of the additional layers of said amplifier for applying an output electrical signal provided by said amplifier to customer equipment associated with said unit.

5. A unit as in claim 4 wherein said input means includes an input optical fiber stub having a microlens disposed adjacent to the input face of said waveguiding layer.

6. A unit as in claim 5 wherein said output means includes an output optical fiber stub having a microlens disposed adjacent to the output face of said waveguiding layer.

7. A unit as in claim 6 wherein said photodetecting and optical-signal-splitting means includes a p-n junction disposed parallel to a portion of the longitudinal extent of said waveguiding layer.

8. A unit as in claim 7 wherein said modulator means includes a p-n junction disposed parallel to a portion of the longitudinal extent of said waveguiding layer.

9. A unit as in claim 8 wherein said amplifier comprises a heterojunction bipolar transistor.

10. A unit as in claim 9 wherein said waveguiding layer comprises In₀.65 Ga₀.35 As₀.7 P₀.3.

11. A unit as in claim 10 wherein input optical signals applied to the input face of said waveguiding layer have a center wavelength of 1.55 μ

m.